Patents by Inventor Tomotake Nashiki

Tomotake Nashiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130241689
    Abstract: The present invention provides a transparent conductive film in which occurrence of scratches during sliding is suppressed even when transparent conductive layer forming surfaces are so arranged as to face each other. Provided is a transparent conductive film comprising a transparent film base; at least one dielectric layer formed on a first main surface of the transparent film base; and a transparent conductive layer formed on the dielectric layer, wherein the transparent conductive layer is patterned; and the surface on the first main surface of the transparent conductive film has an arithmetical mean roughness Ra of 22 nm or more, and has 140/mm2 or more of protrusions having heights of 250 nm or higher at a pattern-opening part in which the transparent conductive layer is not formed.
    Type: Application
    Filed: December 1, 2011
    Publication date: September 19, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Kazuhiro Nakajima, Tomotake Nashiki, Hideo Sugawara
  • Patent number: 8530041
    Abstract: The transparent conductive film of the present invention is a transparent conductive film, comprising a transparent film substrate, and a first transparent dielectric layer, a second transparent dielectric layer and a patterned transparent conductive layer that are formed on one or both sides of the transparent film substrate in this order from the transparent film substrate side, wherein the transparent conductive layer has a thickness of 31 nm or more, the first transparent dielectric layer has a thickness of from 7 nm to 16 nm, the second transparent dielectric layer has a thickness of from 30 nm to 60 nm, and the relation n2<n3?n1 is satisfied, wherein n1 is the refractive index of the first transparent dielectric layer, n2 is the refractive index of the second transparent dielectric layer, and n3 is the refractive index of the transparent conductive layer.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: September 10, 2013
    Assignee: Nitto Denko Corporation
    Inventors: Kazuhiro Nakajima, Tomotake Nashiki, Hideo Sugawara
  • Patent number: 8531406
    Abstract: A transparent conductive film comprising a transparent film base material, a resin layer having a fine uneven geometrical structure, and a transparent conductive thin film laminated on the film base material through the resin layer, wherein the surface of the transparent conductive thin film has an average centerline roughness (Ra) of 0.11 to 0.18 ?m, the maximum height (Ry) of 0.9 to 1.6 ?m and the average distance between peaks (S) of 0.05 to 0.11 mm. The film can prevent the formation of a Newton's ring and shows satisfactory durability (particularly, pen input durability) and satisfactory display property without buzzing.
    Type: Grant
    Filed: August 30, 2006
    Date of Patent: September 10, 2013
    Assignee: Nitto Denko Corporation
    Inventors: Tomotake Nashiki, Hidetoshi Yoshitake, Hideo Sugawara
  • Patent number: 8481150
    Abstract: A transparent conductive multilayer body of the invention comprises a transparent film substrate with a thickness of 2 to 120 ?m; a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film laminated in this order on one side of the transparent film substrate; and a transparent substrate bonded to the other side of the film substrate through a transparent pressure-sensitive adhesive layer, wherein the second dielectric thin film is made of an inorganic material or a mixture of an organic material and an inorganic material, and the conductive thin film contains a crystalline material in which the content of crystal particles whose maximum particle sizes are at most 300 nm is higher than 50% by area. Such a transparent conductive multilayer body fully satisfies the pen input bending durability for a touch panel.
    Type: Grant
    Filed: November 7, 2011
    Date of Patent: July 9, 2013
    Assignee: Nitto Denko Corporation
    Inventors: Tomotake Nashiki, Hidetoshi Yoshitake, Hideo Sugawara
  • Patent number: 8467005
    Abstract: A transparent conductive film includes: a transparent film substrate; a transparent conductor layer provided on one or both sides of the transparent film substrate; and at least one undercoat layer interposed between the transparent film substrate and the transparent conductor layer; wherein: the transparent conductor layer is patterned; and a non-patterned portion not having the transparent conductor layer has the at least one undercoat layer.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: June 18, 2013
    Assignee: Nitto Denko Corporation
    Inventors: Tomotake Nashiki, Hideo Sugawara
  • Patent number: 8467006
    Abstract: A transparent conductive film includes: a transparent film substrate; a transparent conductor layer provided on one or both sides of the transparent film substrate; and at least one undercoat layer interposed between the transparent film substrate and the transparent conductor layer; wherein: the transparent conductor layer is patterned; and a non-patterned portion not having the transparent conductor layer has the at least one undercoat layer.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: June 18, 2013
    Assignee: Nitto Denko Corporation
    Inventors: Tomotake Nashiki, Hideo Sugawara
  • Publication number: 20130149555
    Abstract: An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The temperature inside the furnace in the crystallization step is preferably 170 to 220° C. The change rate of the film length in the crystallization step is preferably +2.5% or less.
    Type: Application
    Filed: July 6, 2011
    Publication date: June 13, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Yuka Yamazaki, Tomotake Nashiki, Hideo Sugawara, Hironobu Machinaga, Eri Sasaki
  • Patent number: 8462278
    Abstract: A transparent conductive film includes: a transparent film substrate; a transparent conductor layer provided on one or both sides of the transparent film substrate; and at least one undercoat layer interposed between the transparent film substrate and the transparent conductor layer; wherein: the transparent conductor layer is patterned; and a non-patterned portion not having the transparent conductor layer has the at least one undercoat layer.
    Type: Grant
    Filed: January 16, 2008
    Date of Patent: June 11, 2013
    Assignee: Nitto Denko Corporation
    Inventors: Tomotake Nashiki, Hideo Sugawara
  • Publication number: 20130105301
    Abstract: An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The indium composite oxide preferably contains more than 0 parts by weight and 15 parts by weight or less of the tetravalent metal based on 100 parts by weight of the total of indium and the tetravalent metal.
    Type: Application
    Filed: July 6, 2011
    Publication date: May 2, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Yuka Yamazaki, Tomotake Nashiki, Hideo Sugawara
  • Publication number: 20130056149
    Abstract: A method for manufacturing a transparent conductive film that can reduce a heating time of crystallizing an amorphous layer containing an indium-based complex oxide is provided. The method for manufacturing a transparent conductive film according to the present invention includes a first step of laminating an amorphous layer formed of an indium-based complex oxide on a first side of a film base material having a thickness of 10 to 50 ?m, a second step of forming a transparent conductive layer by heating the film base material on which the amorphous layer is laminated to 160° C. or above to crystallize the amorphous layer during a process of conveying the film base material from a feed roller and taking up the film base material on a take-up roller, and a third step of forming an adhesive layer on a second side of the film base material.
    Type: Application
    Filed: September 7, 2012
    Publication date: March 7, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Yuka YAMAZAKI, Tomotake NASHIKI
  • Publication number: 20130048348
    Abstract: The present invention is a transparent conductive film having a flexible transparent base and a transparent conductive layer made of a crystalline conductive metal oxide that is formed on one surface of the flexible transparent base, in which the thickness of the flexible transparent base is 80 ?m or less, and the difference H1?H2 between the dimensional change rate H1 when the transparent conductive film is heated at 140° C. for 30 minutes and the dimensional change rate H2 when the transparent conductive layer is removed from the transparent conductive film by etching and the transparent conductive film is heated at 140° C. for 30 minutes is ?0.02 to 0.043%. Because of that, the level difference at the pattern boundary when the film is assembled into a touch panel, etc. is decreased and the deterioration of the appearance can be also suppressed.
    Type: Application
    Filed: August 23, 2012
    Publication date: February 28, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Yuka Yamazaki, Tomotake Nashiki, Hideo Sugawara
  • Publication number: 20130029162
    Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the substrate fed in the first direction; forming a second material film on the first surface of the substrate in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the second material film formed thereon; unrolling and feeding the substrate from the second roll chamber in a second direction from the second roll chamber toward the first roll chamber; forming a first material film on the second material film in a first film formation chamber; taking up the substrate in a roll form in the first roll chamber.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 31, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Tomotake NASHIKI, Yoshimasa SAKATA, Hideo SUGAWARA, Kenkichi YAGURA, Akira HAMADA, Yoshihisa ITO, Kuniaki ISHIBASHI
  • Publication number: 20130029163
    Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the fed substrate; forming a first material film on a first surface in a first film formation chamber; guiding the substrate having the first material film formed thereon to a second film formation chamber in a second direction from the second roll chamber toward the first roll chamber; forming, in the second film formation chamber, a second material film on a second surface opposite the first surface of the substrate when it is being guided in the second direction; taking up, in a third roll chamber provided between the first roll chamber and the second roll chamber, the substrate in a roll state.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 31, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Tomotake NASHIKI, Yoshimasa SAKATA, Hideo SUGAWARA, Kenkichi YAGURA, Akira HAMADA, Yoshihisa ITO, Kuniaki ISHIBASHI
  • Publication number: 20130029161
    Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 31, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventors: Tomotake NASHIKI, Yoshimasa SAKATA, Hideo SUGAWARA, Kenkichi YAGURA, Akira HAMADA, Yoshihisa ITO, Kuniaki ISHIBASHI
  • Publication number: 20120276396
    Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
    Type: Application
    Filed: April 27, 2012
    Publication date: November 1, 2012
    Applicant: NITTO DENKO CORPORATION
    Inventors: Tomotake NASHIKI, Yoshimasa SAKATA, Hideo SUGAWARA, Kenkichi YAGURA, Akira HAMADA, Yoshihisa ITO, Kuniaki ISHIBASHI
  • Publication number: 20120276397
    Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
    Type: Application
    Filed: April 27, 2012
    Publication date: November 1, 2012
    Applicant: NITTO DENKO CORPORATION
    Inventors: Tomotake NASHIKI, Hideo SUGAWARA, Tomonori NOGUCHI, Akira HAMADA, Yoshihisa ITO, Kuniaki ISHIBASHI
  • Publication number: 20120273344
    Abstract: There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer.
    Type: Application
    Filed: June 29, 2012
    Publication date: November 1, 2012
    Applicant: NITTO DENKO CORPORATION
    Inventors: Tomotake Nashiki, Hideo Sugawara
  • Patent number: 8227077
    Abstract: A transparent conductive laminate comprising a transparent film substrate; a transparent conductive thin film provided on one side of the transparent film substrate; and a transparent base substrate bonded to another side of the transparent film substrate with a transparent pressure-sensitive adhesive layer interposed therebetween. The transparent conductive laminate has satisfactory reliability at high temperature and high humidity for touch panels and also has pen input durability and surface pressure durability.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: July 24, 2012
    Assignee: Nitto Denko Corporation
    Inventors: Tomotake Nashiki, Hideo Sugawara
  • Publication number: 20120181063
    Abstract: The present invention relates to a transparent conductive film in which a transparent conductive layer is patterned and that is capable of suppressing deterioration of the appearance due to the difference in hues of reflected light between the pattern portion and the portion directly under the pattern opening portion, and a touch panel that uses it. In the transparent conductive film (10) of the present invention, a first transparent dielectric layer (2) and a transparent conductive layer (4) are formed on a transparent base material (1) in this order. It is preferable that a relationship 0?|a*P?a*O|?4.00 is satisfied and a relationship 0?|b*P?b*O|?5.00 is satisfied where a hue a* value and a hue b* value of reflected light when the pattern portion (P) is irradiated with white light are a*P and b*P, respectively, and a hue a* value and a hue b* value of reflected light when a portion directly under the pattern opening portion (O) is irradiated with white light are a*O and b*O, respectively.
    Type: Application
    Filed: September 28, 2010
    Publication date: July 19, 2012
    Applicant: Nitto Denko Corporation
    Inventors: Kazuhiro Nakajima, Hideo Sugawara, Tomotake Nashiki
  • Patent number: 8182898
    Abstract: A touch panel of the invention comprises a first panel having a first film base with transparency and a first transparent conductive thin film provided on one surface of the first film base; and a second panel having a second film base with transparency and a second transparent conductive thin film provided on one surface of the second film base, wherein the first panel and the second panel are arranged so as to face each other with a spacer therebetween, in such a manner that the first conductive thin film and the second conductive thin film face each other, wherein the surface of the first conductive thin film has a hardness of 1 GPa or more and a modulus of elasticity of 5 GPa or more, the surface of the second conductive thin film has a center line average roughness (Ra) of 0.3 nm to 1.0 nm, and that of the center line average roughness (Ra) of the surface of the second conductive thin film is smaller than that of the surface of the first conductive thin film. The touch panel has good durability.
    Type: Grant
    Filed: April 24, 2007
    Date of Patent: May 22, 2012
    Assignee: Nitto Denko Corporation
    Inventors: Tomotake Nashiki, Hideo Sugawara