Patents by Inventor Tomoyuki Sasaki

Tomoyuki Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11373915
    Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.
    Type: Grant
    Filed: November 4, 2020
    Date of Patent: June 28, 2022
    Assignee: TDK CORPORATION
    Inventors: Zhenyao Tang, Tomoyuki Sasaki
  • Patent number: 11374166
    Abstract: A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: June 28, 2022
    Assignee: TDK CORPORATION
    Inventor: Tomoyuki Sasaki
  • Patent number: 11368338
    Abstract: A network system includes a first network through which a frame of a first type is transmitted in accordance with a first communication protocol and includes a second network in which a frame of a second type is transmitted in accordance with a second communication protocol. A gateway device is connected to the first network and the second network. The gateway device sequentially receives frames of the first type from the first network and determines whether to transmit data regarding the received frames of the first type to the second network. The gateway device transmits, to the second network, a frame of the second type including data regarding a plurality of the frames of the first type determined to be transmitted to the second network when a condition relating to a number of frames of the first type received by the gateway device is satisfied.
    Type: Grant
    Filed: July 15, 2020
    Date of Patent: June 21, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA
    Inventors: Tomoyuki Haga, Manabu Maeda, Takamitsu Sasaki, Hideki Matsushima
  • Patent number: 11367834
    Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: June 21, 2022
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Tatsuo Shibata, Katsuyuki Nakada, Yoshitomo Tanaka
  • Patent number: 11364733
    Abstract: An ink ribbon feeding mechanism includes a cartridge mounting section, a first paying out rotor which is inserted into a first paying out core when a cartridge is being mounted in the cartridge mounting section, and a plurality of rotor side engaging portions which are provided on the first paying out rotor and which engage with a plurality of core side engaging portions when the first paying out rotor rotates. The rotor side engaging portion has an butting portion. When the cartridge is being mounted in the cartridge mounting section, the core side engaging portion butts against the butting portion, one or the other of the first paying out core and the first paying out rotor rotates, the rotor side engaging portion is inserted into the core side insertion recessed portion. A plurality of the butting portions are provided in positions different from each other in a cartridge mounting direction.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: June 21, 2022
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Akio Ishimoto, Taishi Sasaki, Tomoyuki Kubota
  • Publication number: 20220190234
    Abstract: The magnetization rotation element includes: a spin-orbit torque wiring; and a first ferromagnetic layer which is stacked on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a plurality of wiring layers, and wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.
    Type: Application
    Filed: December 8, 2021
    Publication date: June 16, 2022
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Yohei SHIOKAWA, Yugo ISHITANI, Kosuke HAMANAKA, Eiji KOMURA
  • Publication number: 20220190233
    Abstract: A magnetic domain wall movement element includes: a laminate including a ferromagnetic layer, a non-magnetic layer, and a magnetic domain wall movement layer; a first conductive layer; and a first surface layer laminated above a substrate in order from the substrate, wherein the non-magnetic layer is sandwiched between the ferromagnetic layer and the magnetic domain wall movement layer, wherein the first conductive layer is connected to an upper surface of the magnetic domain wall movement layer, wherein the first surface layer contacts at least a part of an upper surface of the magnetic domain wall movement layer, and wherein the resistivity of the first surface layer is higher than the resistivity of the magnetic domain wall movement layer.
    Type: Application
    Filed: December 6, 2021
    Publication date: June 16, 2022
    Applicant: TDK CORPORATION
    Inventors: Shogo YONEMURA, Tomoyuki SASAKI, Tatsuo SHIBATA
  • Patent number: 11362270
    Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: June 14, 2022
    Assignee: TDK CORPORATION
    Inventors: Shinto Ichikawa, Katsuyuki Nakada, Tomoyuki Sasaki
  • Patent number: 11363045
    Abstract: A vehicle anomaly detection server includes: a communicator that communicates with a vehicle to receive a log of an in-vehicle network in the vehicle; a processor; and a memory including at least one set of instructions that, when executed by the processor causes the processor to perform operations including: selecting, when information indicating that an anomaly is occurring to a first vehicle among vehicles is obtained by the processor, an anomaly-related vehicle from among the vehicles based on the anomaly, the first vehicle being the vehicle that communicates with the communicator; transmitting, to the anomaly-related vehicle via the communicator, a first request to transmit a log of an in-vehicle network in the anomaly-related vehicle; and determining whether an anomaly is occurring to the anomaly-related vehicle, based on information indicated by the log transmitted from the anomaly-related vehicle and received by the communicator.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: June 14, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA
    Inventors: Yuishi Torisaki, Tomoyuki Haga, Takamitsu Sasaki, Takeshi Kishikawa, Hideki Matsushima
  • Patent number: 11355698
    Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
    Type: Grant
    Filed: February 24, 2021
    Date of Patent: June 7, 2022
    Assignee: TDK CORPORATION
    Inventor: Tomoyuki Sasaki
  • Publication number: 20220173162
    Abstract: This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.
    Type: Application
    Filed: November 5, 2021
    Publication date: June 2, 2022
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Yohei SHIOKAWA
  • Publication number: 20220163606
    Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.
    Type: Application
    Filed: February 10, 2022
    Publication date: May 26, 2022
    Applicant: TDK CORPORATION
    Inventors: Atsushi TSUMITA, Tomoyuki SASAKI
  • Publication number: 20220157533
    Abstract: An electronic device includes a plurality of chip components and an insulating case. The chip components are arranged in a first direction. The case includes a plate portion, a first protrusion portion, and a second protrusion portion. The plate portion faces first side surfaces of the chip components. The first protrusion portion is formed along a plate-portion first side of the plate portion and protrudes from the plate portion toward a downside perpendicular to the first direction. The second protrusion portion is formed to the first protrusion portion in a second direction and protrudes from the plate portion toward the downside. A protrusion length of the first protrusion portion and the second protrusion portion from the plate portion toward the downside is smaller than a protrusion length of the chip component included in the chip components from the plate portion toward the downside.
    Type: Application
    Filed: October 5, 2021
    Publication date: May 19, 2022
    Applicant: TDK CORPORATION
    Inventors: Akihiro MASUDA, Shinya ITO, Norihisa ANDO, Tomoyuki SASAKI, Shinya ONODERA
  • Publication number: 20220158082
    Abstract: A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.
    Type: Application
    Filed: November 15, 2021
    Publication date: May 19, 2022
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Tatsuo SHIBATA, Tohru OIKAWA
  • Patent number: 11335849
    Abstract: A magnetic domain wall displacement type magnetic recording element which comprises: a first magnetization fixed part which is stacked in a first direction, a magnetic recording layer which includes a magnetic domain wall and extends in a second direction which crosses with the first direction, a non-magnetic layer which is provided between the first magnetization fixed part and the magnetic recording layer, and a first via part which is electrically connected to the magnetic recording layer, wherein at least a part of the first via part is located at a position which is apart from the first magnetization fixed part in the second direction in planar view observed from the first direction, the magnetic recording layer includes a first part which has a position where the first magnetization fixed part overlaps with the magnetic recording layer in planar view observed from the first direction, and a width of the first via part in a third direction which is orthogonal to the second direction is larger than a widt
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: May 17, 2022
    Assignee: TDK CORPORATION
    Inventors: Shogo Yamada, Tomoyuki Sasaki, Yukio Terasaki, Tatsuo Shibata
  • Publication number: 20220139421
    Abstract: A head gimbal assembly (HGA) for a hard disk drive includes a primary dimple having a secondary structure protruding from the primary dimple, where a flexure is movably coupled with a load beam via the primary dimple, and where the secondary structure is configured to restrict the point of contact between the load beam and the flexure. Such an arrangement avoids any shift in the axis of rotation of the flexure, and the attached slider, due to any undesirable protrusion from the primary dimple which may arise in the manufacturing process. Examples of secondary structures include a micro-dimple, a ridge, and an embedded mass of material.
    Type: Application
    Filed: February 12, 2021
    Publication date: May 5, 2022
    Inventors: Yoshinobu Noguchi, Tsuyoshi Matsumoto, Hiroyasu Tsuchida, Tomoyuki Sasaki
  • Publication number: 20220140231
    Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.
    Type: Application
    Filed: January 19, 2022
    Publication date: May 5, 2022
    Inventors: Keita SUDA, Tomoyuki SASAKI
  • Publication number: 20220109102
    Abstract: A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.
    Type: Application
    Filed: September 29, 2021
    Publication date: April 7, 2022
    Applicant: TDK CORPORATION
    Inventors: Tatsuo SHIBATA, Tomoyuki SASAKI
  • Patent number: 11280854
    Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.
    Type: Grant
    Filed: December 25, 2018
    Date of Patent: March 22, 2022
    Assignee: TDK CORPORATION
    Inventors: Atsushi Tsumita, Tomoyuki Sasaki
  • Patent number: 11276815
    Abstract: A spin-orbit torque type magnetization reversal element including a magnetoresistance effect element that comprises a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer which are laminated in this order; and a spin-orbit torque wiring that laminates on the magnetoresistance effect element; wherein a first surface of the spin-orbit torque wiring on the magnetoresistance effect element side is parallel to a plane orthogonal to a laminating direction, and a second surface opposite to the first surface is non-parallel to the plane perpendicular to the stacking direction.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: March 15, 2022
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa