Abstract: A vehicle anomaly detection server includes: a communicator that communicates with a vehicle to receive a log of an in-vehicle network in the vehicle; a processor; and a memory including at least one set of instructions that, when executed by the processor causes the processor to perform operations including: selecting, when information indicating that an anomaly is occurring to a first vehicle among vehicles is obtained by the processor, an anomaly-related vehicle from among the vehicles based on the anomaly, the first vehicle being the vehicle that communicates with the communicator; transmitting, to the anomaly-related vehicle via the communicator, a first request to transmit a log of an in-vehicle network in the anomaly-related vehicle; and determining whether an anomaly is occurring to the anomaly-related vehicle, based on information indicated by the log transmitted from the anomaly-related vehicle and received by the communicator.

Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

Abstract: An information processing device that provides a travel route to a destination to an occupant of a vehicle includes a controller. The controller is configured to acquire travel information obtained by another vehicle that travels on a candidate route to the destination set by the occupant from a second point in time prior to a first point in time when the destination is set to the first point in time in relation to traveling of the other vehicle, and to decide the travel route optimal for driving of the vehicle to the destination based on the acquired travel information.

Abstract: A spin inductor has a first inductor layer, a first terminal, and a second terminal. The first inductor layer includes a first wiring layer and a first ferromagnetic layer in contact with the first wiring layer. The first terminal is in contact with a first lateral surface of the first inductor layer. The second terminal is in contact with a second lateral surface that is different from the first lateral surface of the first inductor layer. A virtual plane that connects a top edge and a bottom edge of the first lateral surface is inclined in the laminating direction.

Abstract: A gateway that notifies a fraud detection server located outside a vehicle of information about an in-vehicle network system including an in-vehicle network includes: a priority determiner that determines a priority using at least one of: a state of the vehicle including the in-vehicle network system; an identifier of a message communicated on the in-vehicle network; and a result of fraud detection performed on the message; a frame transmitter-receiver that transmits and receives the message communicated on the in-vehicle network; a frame interpreter that extracts information about the in-vehicle network based on the message received by the frame transmitter-receiver; and a frame uploader that notifies the fraud detection server of notification information including the priority and the information about the in-vehicle network.

Abstract: A spin inductor includes a laminated body having a first inductor layer, a spacer layer, and a second inductor layer. The first inductor layer includes a first wiring layer, and a first ferromagnetic layer in contact with the first wiring layer. The second inductor layer includes a second wiring layer, and a second ferromagnetic layer in contact with the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.

Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.

Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

Abstract: A threat information analysis server includes: an update manager that manages update information indicating that function addition to an IoT device is performed; a threat information manager that stores threat information of a cyberattack; a risk level manager that manages risk level information defining a risk level of the IoT device; a related threat information manager that manages the threat information and related threat information associating the IoT device with the risk level; a risk level updater that associates the threat information and the risk level of the IoT device with each other and updates the related threat information, based on the update information; and an outputter that outputs the related threat information managed by the related threat information manager.

Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

Abstract: A laying sheet is laid between a printing device configured to perform printing on a medium and an installation surface on which the printing device is installed. The laying sheet includes a first surface coming into contact with the installation surface and a second surface being a surface opposite to the first surface. The second surface is provided with at least one mark indicating information relating to the printing device.

Abstract: A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.

Abstract: A magnetic element includes a first ferromagnetic layer, and a first wiring that faces the first ferromagnetic layer in a first direction. The first wiring has a wiring portion extending in a second direction different from the first direction, and a wide width portion having a wider width than the wiring portion in a third direction intersecting the second direction when viewed from the first direction. A center position of the wiring portion in the third direction and a center position of the first ferromagnetic layer in the third direction are different from each other.

Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

Abstract: An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.

Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

Abstract: A reservoir element includes a plurality of magnetoresistive effect elements each having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer laminated in a first direction, and separated from each other, a spin orbit torque wiring that faces a part of at least one of the plurality of magnetoresistive effect elements, and a spin-conductive layer that connects at least the magnetoresistive effect elements closest to each other of the plurality of magnetoresistive effect elements, and conducts spins, wherein, the magnetoresistive effect elements are seen from the first direction, the second ferromagnetic layer overlaps part of the first ferromagnetic layer, the spin orbit torque wiring faces a first portion that does not overlap the second ferromagnetic layer in the first ferromagnetic layer when seen from the first direction, and the spin-conductive layer faces at least the first ferromagnetic layer each of the closest magnetoresistive effect elements.

Abstract: A magnetoresistance effect element includes: a laminate in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are laminated in order in a first direction; a magnetic body that is present on the second ferromagnetic layer or above the second ferromagnetic layer of the laminate; and a wiring that is in contact with a first side surface of the magnetic body and extends in a second direction crossing the first direction. The thickness of the second ferromagnetic layer in the first direction is thinner than the minimum length of the second ferromagnetic layer in a plane orthogonal to the first direction. The thickness of the magnetic body in the first direction is thicker than the minimum length of the magnetic body in a plane orthogonal to the first direction.

Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.