Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

Abstract: This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

Abstract: A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.

Abstract: An electronic device includes a plurality of chip components and an insulating case. The chip components are arranged in a first direction. The case includes a plate portion, a first protrusion portion, and a second protrusion portion. The plate portion faces first side surfaces of the chip components. The first protrusion portion is formed along a plate-portion first side of the plate portion and protrudes from the plate portion toward a downside perpendicular to the first direction. The second protrusion portion is formed to the first protrusion portion in a second direction and protrudes from the plate portion toward the downside. A protrusion length of the first protrusion portion and the second protrusion portion from the plate portion toward the downside is smaller than a protrusion length of the chip component included in the chip components from the plate portion toward the downside.

Abstract: A magnetic domain wall displacement type magnetic recording element which comprises: a first magnetization fixed part which is stacked in a first direction, a magnetic recording layer which includes a magnetic domain wall and extends in a second direction which crosses with the first direction, a non-magnetic layer which is provided between the first magnetization fixed part and the magnetic recording layer, and a first via part which is electrically connected to the magnetic recording layer, wherein at least a part of the first via part is located at a position which is apart from the first magnetization fixed part in the second direction in planar view observed from the first direction, the magnetic recording layer includes a first part which has a position where the first magnetization fixed part overlaps with the magnetic recording layer in planar view observed from the first direction, and a width of the first via part in a third direction which is orthogonal to the second direction is larger than a widt

Abstract: A head gimbal assembly (HGA) for a hard disk drive includes a primary dimple having a secondary structure protruding from the primary dimple, where a flexure is movably coupled with a load beam via the primary dimple, and where the secondary structure is configured to restrict the point of contact between the load beam and the flexure. Such an arrangement avoids any shift in the axis of rotation of the flexure, and the attached slider, due to any undesirable protrusion from the primary dimple which may arise in the manufacturing process. Examples of secondary structures include a micro-dimple, a ridge, and an embedded mass of material.

Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.

Abstract: A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

Abstract: A spin current magnetoresistance effect element includes a magnetoresistance effect element, a spin-orbit torque wiring that extends in a first direction intersecting a lamination direction of the magnetoresistance effect element and is positioned on a side of the magnetoresistance effect element with the second ferromagnetic metal layer, and a control unit configured to control a direction of a current during reading. The control unit is connected to at least one of a first and second point, which are positions with the magnetoresistance effect element interposed therebetween in the first direction in the spin-orbit torque wiring, and a third point on a side of the magnetoresistance effect element with the first ferromagnetic layer. The control unit shunts a read current during reading from the third point toward the first point and the second point or merges the read current toward the third point from the first point and the second point.

Abstract: A spin-orbit torque type magnetization reversal element including a magnetoresistance effect element that comprises a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer which are laminated in this order; and a spin-orbit torque wiring that laminates on the magnetoresistance effect element; wherein a first surface of the spin-orbit torque wiring on the magnetoresistance effect element side is parallel to a plane orthogonal to a laminating direction, and a second surface opposite to the first surface is non-parallel to the plane perpendicular to the stacking direction.

Abstract: A magnetoresistance effect element includes: a laminate in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are laminated in order in a first direction; a magnetic body that is present on the second ferromagnetic layer or above the second ferromagnetic layer of the laminate; and a wiring that is in contact with a first side surface of the magnetic body and extends in a second direction crossing the first direction. The thickness of the second ferromagnetic layer in the first direction is thinner than the minimum length of the second ferromagnetic layer in a plane orthogonal to the first direction. The thickness of the magnetic body in the first direction is thicker than the minimum length of the magnetic body in a plane orthogonal to the first direction.

Abstract: A domain wall type magnetic recording element includes a first ferromagnetic layer containing a ferromagnetic material, a magnetic recording layer extending in a first direction which intersects a lamination direction of the first ferromagnetic layer and containing a magnetic domain wall, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the magnetic recording layer, in which the magnetic recording layer includes a recessed part or a protruding part, which is configured to trap the magnetic domain wall, on a side surface, and a width of the first ferromagnetic layer is smaller than a smallest width of the magnetic recording layer in a second direction perpendicular to the first direction in a plan view from the lamination direction.

Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.

Abstract: A TMR element includes a reference layer, a magnetization free layer, a tunnel barrier layer between the reference layer and the magnetization free layer, and a perpendicular magnetization inducing layer and a leakage layer stacked on a side of the magnetization free layer opposite to the tunnel barrier layer side. A magnetization direction of the reference layer is fixed along a stack direction. The perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. The leakage layer is disposed on an end portion region in an in-plane direction of the magnetization free layer. The perpendicular magnetization inducing layer is disposed on at least a central region in the in-plane direction of the magnetization free layer. A resistance value of the leakage layer along the stack direction per unit area in plane is less than that of the perpendicular magnetization inducing layer.

Abstract: This spin-orbit torque type magnetization rotational element (10) is provided with: a spin-orbit torque wiring (2); a first ferromagnetic layer (1) that is laminated on the spin-orbit torque wiring; a first nonmagnetic metal layer (3) and a second nonmagnetic metal layer (4) that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in a plan view from the second direction, and a first insulating layer (31) surrounding the spin-orbit torque wiring, wherein the gravity center (G) of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point (S) located at the center between the first and second nonmagnetic metal layers in the first direction, and the first insulating layer is any one selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide, and magnesium oxide.

Abstract: Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.

Abstract: A spin-orbit torque magnetization rotational element includes: a first insulating layer with first and second openings; a first conductive portion formed inside the first opening; a second conductive portion formed inside the second opening; a spin-orbit torque wiring located in a first direction and extends in a second direction over the first and second conductive portions; and a first ferromagnetic layer located on the side opposite to the first insulating layer in the spin-orbit torque wiring, wherein the first conductive portion includes a first surface facing the spin-orbit torque wiring, a second surface facing the first surface and is located at a position farther from the spin-orbit torque wiring than the first surface, and a side surface connecting the first surface and the second surface, and the side surface includes a continuous major surface and a third surface inclined or curved and is discontinuous with respect to the major surface.

Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.