Abstract: A spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction intersecting with the spin-orbit torque wiring, wherein the first ferromagnetic layer comprises a plurality of ferromagnetic constituent layers and at least one inserted layer sandwiched between adjacent ferromagnetic constituent layers, and polarities of spin Hall angles of two layers, which sandwich at least one of the ferromagnetic constituent layers among the plurality of the ferromagnetic constituent layers, differ.

Abstract: A magnetic recording array according to the present embodiment includes a plurality of spin elements, a first reference cell, and a second reference cell, wherein the plurality of spin elements, the first reference cell, and the second reference cell each have a wiring and a stacked body including a first ferromagnetic layer stacked on the wiring, wherein the electrical resistance of the wiring of the first reference cell is higher than the electrical resistance of the wiring of each spin element, and wherein the electrical resistance of the wiring of the second reference cell is lower than the electrical resistance of the wiring of each spin element.

Abstract: An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.

Abstract: A spin current magnetization rotational magnetoresistance effect element includes a magnetoresistance effect element including a first ferromagnetic metal layer in which a direction of magnetization is fixed, a second ferromagnetic metal layer configured for a direction of magnetization to be changed, and a nonmagnetic layer provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer. Furthermore, in the spin current magnetization rotational magnetoresistance effect element, the spin-orbit torque wiring containing a pure spin current generation part made of a material that generates a pure spin current and a low resistance part made of a material having electric resistance lower than electrical resistance of the pure spin current generation part.

Abstract: A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

Abstract: This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance elect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

Abstract: A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

Abstract: A magnetic recording array includes domain wall motion elements and wirings, the domain wall motion elements includes first, second, and third elements, each having a magnetic wall motion layer with first and second end portions, the second element has the second end portion closest to the first end portion of the first element, the third element has the second end portion closest or second closest to the first end portion of the first element, a first distance between the first end portion of the first element and the second end portion of the second element and a second distance between the first end portion of the first element and the second end portion of the third element are shorter than a third distance between the first end portion of the first element and the first end portion closest to the first end portion of the first element.

Abstract: A spin-orbit torque type magnetization rotational element includes; a spin-orbit torque wiring that extends in a first direction; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring; and a first nonmagnetic metal layer and a second nonmagnetic metal layer that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in the first direction in a plan view from the second direction, wherein the gravity center of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point located at the center between the first and second nonmagnetic metal layers in the first direction.

Abstract: This spin current magnetization rotational element includes a first ferromagnetic metal layer for a magnetization direction to be changed, and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated.

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

Abstract: A magnetoresistance effect element is provided in which a MR ratio is not likely to decrease even at a high bias voltage. A magnetoresistance effect element according to an aspect of the present invention includes: a first ferromagnetic metal layer; a second ferromagnetic metal layer; a tunnel barrier layer that is provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer, in which the tunnel barrier layer is formed of a non-magnetic oxide having a cubic crystal structure represented by a compositional formula A1-xA?xO, where A represents a divalent cation, and A? represents a trivalent cation, and the number of A ions is more than the number of A? ions in a primitive lattice of the crystal structure.

Abstract: A magnetic element includes a first ferromagnetic layer, and a first wiring that faces the first ferromagnetic layer in a first direction. The first wiring has a wiring portion extending in a second direction different from the first direction, and a wide width portion having a wider width than the wiring portion in a third direction intersecting the second direction when viewed from the first direction. A center position of the wiring portion in the third direction and a center position of the first ferromagnetic layer in the third direction are different from each other.

Abstract: A reservoir element according to an aspect of the present invention includes a plurality of ferromagnetic layers laminated in a first direction and separated from each other, at least one spin-orbit torque wiring that faces at least one of the plurality of ferromagnetic layers, and a spin transport layer that faces the plurality of ferromagnetic layers, connects at least the two ferromagnetic layers closest to each other among the plurality of ferromagnetic layers and transports spins.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0?x?4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an insertion layer that is disposed at least one of a position between the first ferromagnetic layer and the nonmagnetic layer and a position between the second ferromagnetic layer and the nonmagnetic layer, in which the nonmagnetic layer is composed of an oxide containing Mg and Ga, and the insertion layer is a ferromagnetic component containing Ga.

Abstract: A reservoir element includes a plurality of magnetoresistive effect elements each having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer laminated in a first direction, and separated from each other, a spin orbit torque wiring that faces a part of at least one of the plurality of magnetoresistive effect elements, and a spin-conductive layer that connects at least the magnetoresistive effect elements closest to each other of the plurality of magnetoresistive effect elements, and conducts spins, wherein, the magnetoresistive effect elements are seen from the first direction, the second ferromagnetic layer overlaps part of the first ferromagnetic layer, the spin orbit torque wiring faces a first portion that does not overlap the second ferromagnetic layer in the first ferromagnetic layer when seen from the first direction, and the spin-conductive layer faces at least the first ferromagnetic layer each of the closest magnetoresistive effect elements.

Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.