Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming light emitting units of at least two colors on a base substrate, which includes: forming a first electrode, a light emitting layer and a second electrode on the base substrate. An electrode sub-layer and a transparent structure are formed on the base substrate to form the first electrode. A first transparent conductive layer, a transparent etching barrier layer and a second transparent conductive layer are formed on a side of the electrode sub-layer away from the base substrate to form the transparent structure of the first color light emitting unit. An etching rate of the first transparent conductive layer and an etching rate of the second transparent conductive layer are substantially identical, and thicknesses of transparent structures in different light emitting units are different.

Abstract: The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and

Abstract: A sputtering system and a deposition method are provided. The sputtering system includes at least two sputtering chambers. Each of the at least two sputtering chambers includes a plurality of targets separated from each other and a plurality of target pedestals. Each of the plurality of targets is mounted on a corresponding target pedestal of the plurality of target pedestals, and a gap between two adjacent targets of the plurality of targets has a width sufficient to accommodate at least one of the plurality of targets.

Abstract: Embodiments of this disclosure provide a thin film of poly-silicon and a method for fabricating the same, and a thin film transistor and a method for fabricating the same, where a metal layer, a buffer layer, and an amorphous-silicon layer are formed on an underlying substrate successively, and metal atoms of the metal layer can be diffused to come into contact with the amorphous-silicon layer, so that the amorphous-silicon can be converted into a poly-silicon layer under the catalysis of the metal ions.

Abstract: A method for fabricating a contact hole of an array substrate, an array substrate and a display device are disclosed, the method includes: coating a topmost layer with a first photoresist coating, exposing but not developing a part of the first photoresist coating, corresponding to a first contact hole, in an exposure process; coating the first photoresist coating with a second photoresist coating, exposing a part of the second photoresist coating, corresponding to the first contact hole, in an exposure process; developing and removing exposed parts of the first and second photoresist coatings, wherein a size of a removed part of the second photoresist coating, corresponding to the first contact hole, is smaller than a size of a removed part of the first photoresist coating, corresponding to the first contact hole; and removing parts of functional film layers, corresponding to the first contact hole, to form the first contact hole.

Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.

Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.

Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming light emitting units of at least two colors on a base substrate, which includes: forming a first electrode, a light emitting layer and a second electrode on the base substrate. An electrode sub-layer and a transparent structure are formed on the base substrate to form the first electrode. A first transparent conductive layer, a transparent etching barrier layer and a second transparent conductive layer are formed on a side of the electrode sub-layer away from the base substrate to form the transparent structure of the first color light emitting unit. An etching rate of the first transparent conductive layer and an etching rate of the second transparent conductive layer are substantially identical, and thicknesses of transparent structures in different light emitting units are different.

Abstract: An array substrate includes a base substrate, a transistor on the base substrate, a planarization layer on a side of the transistor away from the base substrate, a recessed portion on the planarization layer, and a light blocking portion in the recessed portion. The light blocking portion is configured to prevent a light from being incident upon an active layer.

Abstract: A display back plate, a fabricating method for the same, and a display device are provided. The display back plate includes a substrate, a transparent heat conduction layer disposed on the substrate, and an array structure layer disposed on the heat conduction layer. The array structure layer includes a light shielding layer, a first thin film transistor, and a second thin film transistor, where the light shielding layer is disposed between the transparent heat conduction layer and the first thin film transistor.

Abstract: Disclosed are a photoresist composition, a pixel definition structure and a manufacturing method thereof, and a display panel. The photoresist composition includes an organic film-forming resin, a superhydrophobic polymerizable monomer, a polyfunctional crosslinkable polymerizable monomer, a photoinitiator, an additive and a solvent.

Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and

Abstract: Disclosed are a pixel defining layer and a manufacturing method thereof, and a display panel, in the field of display technologies. An auxiliary electrode pattern is on a side of a substrate and configured to be electrically connected to a cathode in a display panel; and a first sub-defining layer is on a side of the auxiliary electrode pattern away from the substrate. A pixel defining layer has a plurality of openings, and the plurality of openings all pass through the auxiliary electrode pattern and the first sub-defining layer. The opening is configured to accommodate a material of a light emitting layer. An orthographic projection of the auxiliary electrode pattern on the substrate is within an orthographic projection of the first sub-defining layer on the substrate.

Abstract: The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.

Abstract: A thin film transistor and a manufacturing method thereof, and an array substrate are provided. The thin film transistor includes an active layer, a source electrode, a drain electrode, a gate electrode, and a light shielding portion. The source electrode and the drain electrode electrically connect to the active layer, respectively, the gate electrode and the light shielding portion are on same one side of the active layer; in a direction from the source electrode to the drain electrode, the gate electrode is between the source electrode and the drain electrode, and the light shielding portion is at at least one of a group consisting of a spacing between the gate electrode and the source electrode and a spacing between the gate electrode and the drain electrode.

Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.

Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.

Abstract: A TFT and a method for manufacturing the TFT, an array substrate, and a display device are provided. An active layer of the TFT includes a channel region, a first conductive region and a second conductive region, and the channel region is arranged between the first conductive region and the second conductive region. The channel region includes a first side and a second side, the first side is opposite to the second side, the first side is in contact with a third side of the first conductive region, the second side is in contact with a fourth side of the second conductive region, and a length of the first side is greater than a length of the third side.

Abstract: The present disclosure provides an oxide semiconductor layer and a preparation method thereof, device, substrate, and means, and belongs to the field of semiconductor technologies. The method includes: forming an oxide semiconductor layer having multiply types of regions on a substrate, at least two types of the multiple types of regions having different thicknesses, and adjusting an oxygen content of at least one type of regions in the multiply types of regions, so that the oxygen content and the thickness in the multiple types of regions are positively correlated.