Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.

Abstract: Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.

Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.

Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.

Abstract: A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.

Abstract: Described is a CMOS power plane including interleaving contact areas, alternating Vled and Vcat contact areas, on at least two long sides of the µLED display area. By this way, Vled and cathode current are injected uniformly along the four sides of the µLED display panel. A large cathode current distribution ring on Vled and Vcat circuits is used to distribute the current along the four sides of the panel. The current distribution ring surrounds a pixel die area. An insulated area may be included on the cathode current redistribution ring adjacent one of the of µbumps.

Abstract: A lighting device is disclosed that includes a plurality of light emitting diodes arranged in an array, a plurality of trenches disposed between and optically isolating the light emitting diodes, and a patterned converter layer disposed over an array surface formed by light emitting surfaces of the light emitting diodes and upper surfaces of the trenches, the patterned converter layers including a first region having a first converter and a second region having a second converter different from the first converter, the first region and second region disposed over different areas of the array surface.

Abstract: Described is a CMOS power plane including interleaving contact areas, alternating Vled and Vcat contact areas, on at least two long sides of the ?LED display area. By this way, Vled and cathode current are injected uniformly along the four sides of the ?LED display panel. A large cathode current distribution ring on Vled and Vcat circuits is used to distribute the current along the four sides of the panel. The current distribution ring surrounds a pixel die area. An insulated area may be included on the cathode current redistribution ring adjacent one of the of ?bumps.

Abstract: Described is a CMOS power plane including interleaving contact areas, alternating Vled and Vcat contact areas, on at least two long sides of the ?LED display area. By this way, Vled and cathode current are injected uniformly along the four sides of the ?LED display panel. A large cathode current distribution ring on Vled and Vcat circuits is used to distribute the current along the four sides of the panel. The current distribution ring surrounds a pixel die area. An insulated area may be included on the cathode current redistribution ring adjacent one of the of ?bumps.

Abstract: A light-emitting device includes a semiconductor diode structure, a surface-lattice-mode (SLR) structure against the back of the diode structure, and a reflector against the back of the SLR structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The SLR structure includes an index-matched layer, a lower-index layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating surface-lattice-resonance modes supported by the SLR structure, to propagate perpendicularly toward the device exit surface.

Abstract: A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

Abstract: A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.

Abstract: A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically. Multiple devices can be arranged as a light-emitting array.

Abstract: A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

Abstract: A semiconductor diode structure has one or more light-emitting active layers and a redirection layer on the back surface that includes one or more of an array of nano-antennae, a partial photonic bandgap structure, a photonic crystal, or an array of meta-atoms or meta-molecules, and exhibits non-specular internal reflective redirection of output light incident thereon within the diode structure. One or both of the front or back surfaces exhibit position-dependent redirection, reflection, or transmission of the output light, including one or both of (i) position-dependent internal reflective redirection of output light incident on the back-surface or (ii) position-dependent internal reflective redirection, or position-dependent transmissive redirection, of output light incident on a front-surface layer or coating. Position dependence of luminance of output light exiting the diode structure can differ from position dependence of emission from the active layer.

Abstract: A light-emitting device assembly includes an emitter array of light-emitting elements, a transparent substrate, a structured lens, and an angular filter. The emitter array emits from its emission surface output light that is transmitted through the substrate, and enables selective activation of and emission from individual elements or subsets of elements of the array. The structured lens is formed on or in the substrate, and comprises micro- or nano-structured elements resulting in an effective focal length less than an effective distance between the structured lens and the emission surface. The angular filter is positioned on or in the substrate or on the emission surface and exhibits decreasing transmission or a cutoff angle with increasing angle of incidence.

Abstract: LED arrays comprise patterned reflective grids that enhance the contrast ratio between adjacent pixels or adjacent groups of pixels in the array. The pattern on the reflective grid may also improve adhesion between the reflective grid and one or more layers of material disposed on and attached to the reflective grid. The reflective grid may be formed, for example, as a reflective metal grid, a grid of dielectric reflectors, or a grid of distributed Bragg reflectors (DBRs). If formed as a metal grid, the reflective grid may provide electrical contact to one side of the LED diode junctions. This specification also discloses fabrication processes for such LED arrays.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically.

Abstract: A lighting device is disclosed that includes a plurality of light emitting diodes arranged in an array, a plurality of trenches disposed between and optically isolating the light emitting diodes, and a patterned converter layer disposed over an array surface formed by light emitting surfaces of the light emitting diodes and upper surfaces of the trenches, the patterned converter layers including a first region having a first converter and a second region having a second converter different from the first converter, the first region and second region disposed over different areas of the array surface.