Abstract: The present invention relates to a light emitting diode component, comprising a light emitting semiconductor structure having a top surface, and a micro-optical multilayer structure arranged to guide light out from said light emitting semiconductor structure, said micro-optical multilayer structure comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from said semiconductor structure, wherein a refractive index, ni, of the i:th layer is greater than a refractive index, ni+l, of the i+1:th layer, and wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer. The present invention also relates to a light emitting diode comprising such a light emitting diode component.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal busbar is disposed on the semiconductor structure. A first portion of the metal busbar is in direct contact with the semiconductor structure. A reflector is disposed between a second portion of the metal busbar and the semiconductor structure. A current blocking structure prevents current from being injected in the light emitting layer in a region below the first portion.

Abstract: The present invention relates to a light emitting diode component (101), comprising a light emitting semiconductor structure (104) having a top surface, and a micro-optical multilayer structure (102) arranged to guide light out from said light emitting semiconductor structure (104), said micro-optical multilayer structure (102) comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from said semiconductor structure (104), wherein a refractive index, ni, of the i:th layer is greater than a refractive index, ni+1, of the i+1:th layer, and wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer. The present invention also relates to a light emitting diode comprising such a light emitting diode component.

Abstract: A substantial amount of the light emitting surface area of a wavelength conversion element above a light emitting element is covered by a reflective thermal conductive element. The light that is reflected by this reflective element is ‘recycled’ within the light emitting structure and exits the structure through the smaller area that is not covered by the reflective element. Because the thermal conductive element does not need to be transparent, a relatively thick metal layer may be used; and, because the thermal conductive element covers a substantial area of the wavelength conversion element, the thermal efficiency of this arrangement is very high. The reflective thermal conductive element may be coupled to thermal conductive pillars, which may be mounted on a thermal conductive submount.

Abstract: A system for supplying a load comprising: an input inductor configured to receive an input voltage, a selection module connected to the inductor via a switching node, and a multi-level half-bridge stage comprising a plurality of half-bridge stages, each half-bridge stage comprising a pair of switches connected between a switching node; a power combining stage coupled to each half-bridge stage using parallel bus voltage lines output from the multi-level half-bridge stage, the power combining stage configured to output a voltage to the load; and a controller configured, based on the input voltage, to selectively control a half-bridge stage to operate in a half-bridge mode to provide a stepped-up voltage on a bus voltage line, wherein the controller is further configured to control the power combining stage to provide a voltage between the bus voltage lines and the sum of these voltages is higher than a peak of the input voltage.

Abstract: Embodiments of the invention include a semiconductor light emitting device. The device includes a substrate having a first surface and a second surface opposite the first surface. The device further includes a semiconductor structure disposed on the first surface of the substrate. A cavity is disposed within the substrate. The cavity extends from the second surface of the substrate. The cavity has a sloped side wall.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal busbar is disposed on the semiconductor structure. A first portion of the metal busbar is in direct contact with the semiconductor structure. A reflector is disposed between a second portion of the metal busbar and the semiconductor structure. A current blocking structure prevents current from being injected in the light emitting layer in a region below the first portion.

Abstract: The escape surface of a light emitting element includes features that include sloped surfaces that have angles of inclination that are based on the direction of peak light output from the light emitting element. If the light output exhibits a number of lobes at different directions, the sloped surfaces may have a corresponding number of different angles of inclination. To minimize the re-injection of light into adjacent features, adjacent features may be positioned to avoid having surfaces that directly face each other. The features may be shaped or positioned to provide a pseudo-random distribution of inclined surfaces across the escape surface, and multiple roughening processes may be used.

Abstract: The escape surface of a light emitting element includes features (310) that include sloped surfaces (312, 314) that have angles of inclination that are based on the direction of peak light output from the light emitting element. If the light output exhibits a number of lobes at different directions, the sloped surfaces (312, 314) may have a corresponding number of different angles of inclination (as in FIGS. 3b and 3c). To minimize the re-injection of light into adjacent features, adjacent features may be positioned to avoid having surfaces that directly face each other. The features may be shaped or positioned to provide a pseudo-random distribution of inclined surfaces across the escape surface, and multiple roughening processes may be used.

Abstract: Power conversion device for supplying a load with a PWM signal, comprising an inductive filter having at least an output configured to be connected to the load, the device comprising: a power conversion module supplied by an input voltage and configured for providing a plurality of output signals wherein one of the plurality of output signals is supplied to the filter; a conversion ratio control stage coupled to the power conversion module; and a controller configured to: determine a requested conversion ratio based on the input voltage and a target reference voltage; and based on the requested conversion ratio, control the conversion ratio control stage to operate in either a first operating mode, whereby the power conversion module provides the output signals in accordance with a first conversion ratio, or a second operating mode, whereby the power conversion module provides the output signals in accordance with a second conversion ratio.

Abstract: The current invention relates to a power conversion device (10), for supplying a load (11) with a PWM signal through an inductive output filter (105). The power conversion device (10) comprises a power conversion module (101) supplied by a DC input voltage (Vin) and is configured for providing a plurality of output signals (PWM1, . . . , PWMn) having a level amplitude that is a fraction of the input voltage (Vin) level. Each output signal is floating with a bias component equally split in a plurality of steps ranging from a determined lowest fraction level amplitude to a determined highest fraction level amplitude. The power conversion device (10) further comprises a multiplexer (103) receiving as a plurality of inputs the plurality of output signals (PWM1, . . . , PWMn). The multiplexer is configured for outputting one output signal (PWMx) selected from the plurality of inputs, whereby the output signal (PWMx) of the multiplexer (103) is connected to the output filter (105).

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract: The current invention relates to a LED driver (10) for driving at least two LED strings (131, 133) comprising: a dual output power converter (103) for converting an input voltage (Vin) into two different output voltages for driving two sets of said at least two LED strings (131, 133), a controller (107) for controlling the dual output power converter (103) based on at least one input set point, the dual output converter (103) comprising a switched capacitor converter comprising a plurality of switches, a plurality of capacitors, the outputs of the dual output power converter (103) being connected to internal nodes of the dual power converter (103), the controller (107) being further adapted to deliver PWM output control signals for driving the switches, the duty cycle of which being a function of said at least one input set point. The invention also relates to a lighting system (1) comprising such a driver (10).

Abstract: The invention relates to an illumination device for embedding data symbols of a data signal into a luminance output of the illumination device. The device includes a LED comprising at least two segments which have a common electrode and are individually controllable. The LED is configured to generate the luminance output in response to a drive signal. The device further includes a controller configured for switching one of the segments on or off in response to the data signal to embed data symbols of the data signal into the light output of the device. One advantage of such an approach is that the proposed device is compatible with conventional LED drivers since no additional electronics for modulating the drive signal are necessary, which enables simple implementation and reduced costs.

Abstract: Affixed over a transparent growth substrate (34) of an LED die (30) is a transparent rectangular pillar (40), having a footprint approximately the same size as the LED die. The pillar height is greater than a length of the LED die, and the pillar has an index (n) approximately equal to that of the substrate (e.g., 1.8), so there is virtually no TIR at the interface due to the matched indices. Surrounding the pillar and the LED die is a lens portion (42) having a diameter between 1.5-3 times the length of the LED die. The index of the lens portion is about 0.8 times the index of the substrate. The lens portion may have a dome shape (46). A large portion of the light exiting the substrate is internally reflected off the lateral pillar/cylinder interface and exits the top surface of the pillar. Thus, the emission is narrowed and light extraction efficiency is increased.

Abstract: A lighting device according to embodiments of the invention includes a substrate with a plurality of holes that extend from a surface of the substrate. A non-III-nitride material is disposed within the plurality of holes. The surface of the substrate is free of the non-III-nitride material. A semiconductor structure is grown on the surface of the substrate. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region.

Abstract: The present invention relates to a light emitting die component formed by multilayer structures.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract: The present invention relates to a driver device and a corresponding driving method for driving a load (22), in particular an LED unit, said driver device comprising power input terminals (51, 52) for receiving a periodic supply voltage from an external power supply potentially including a dimmer for dimming said periodic supply voltage, power output terminals (53, 54) for providing a drive voltage and/or drive current for driving a load (22), a power stage (70a, 70b, 70c, 70d) coupled between the power input terminals and the power output terminals for controlling an input current received from said power input terminals to draw a high power from said external power supply in a first mode or to draw a low or no power from said external power supply in a second mode, said high power being higher than the power required for driving said load and said low power being lower than the power required for driving said load, wherein said power stage controls said input current to be in the second mode only for a perc