Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 ?m to 100 ?m and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 ?m to 10 ?m.

Abstract: A light-emitting device assembly includes an emitter array of light-emitting elements, a transparent substrate, a structured lens, and an angular filter. The emitter array emits from its emission surface output light that is transmitted through the substrate, and enables selective activation of and emission from individual elements or subsets of elements of the array. The structured lens is formed on or in the substrate, and comprises micro- or nano-structured elements resulting in an effective focal length less than an effective distance between the structured lens and the emission surface. The angular filter is positioned on or in the substrate or on the emission surface and exhibits decreasing transmission or a cutoff angle with increasing angle of incidence.

Abstract: A light-emitting device includes a substrate, a semiconductor diode structure, a wavelength-converting layer less than 50. microns thick with luminescent particles in an index-matched inorganic binder, optical sidewall coating, and an optical sidewall structure. The optical sidewall structure is interposed between substrate sidewalls and optical sidewall coating, and redirects side-propagating output light toward or within the wavelength-converting layer. The optical sidewall structure can be part of the wavelength-converting layer or part of an adhering layer between the substrate and the wavelength-converting layer.

Abstract: An inventive light-emitting apparatus comprises an array of multiple light-emitting pixels, and one or more transmissive optical elements positioned at a light-emitting surface of the light-emitting pixel array. One or more of the light-emitting pixels is defective. Each optical element is positioned at a location of a corresponding defective light-emitting pixel, and extends over that defective pixel and laterally at least partly over one or more adjacent pixels. Each optical element transmits laterally at least a portion of light emitted by the adjacent pixels to propagate away from the array from the location of the defective pixel, reducing the appearance of the defective pixel.

Abstract: A laterally heterogenous wavelength-converting optical element includes pixel regions surrounded by border regions; each includes down-converting phosphor particles bound by a coating or solid medium. The pixel regions are aligned with LEDs of an array. The phosphor regions differ with respect to one or more of compositions, particle sizes, coating thicknesses, refractive indices, or voids (size, number density, or volume fraction). Those difference(s) can result in the border regions exhibiting larger optical scattering, which can improve contrast of down-converted light emitted by adjacent pixels of the array.

Abstract: An adaptive lighting system comprises an array of independently controllable LEDs, and a metalens positioned to collimate, focus, or otherwise redirect light emitted by the array of LEDs. The adaptive lighting system may optionally include a pre-collimator positioned in the optical path between the array of LEDs and the metalens.

Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

Abstract: The invention describes a broadband mirror comprising an outer surface layer; and a dielectric layer stack arranged underneath the outer surface layer; characterized in that the dielectric layer stack comprises at least one patterned surface at an interface between adjacent dielectric layers of the dielectric layer stack. The invention further describes a light-emitting diode. The invention also describes a method of manufacturing a broadband mirror, which method comprises the steps of providing an outer surface layer and applying a plurality of dielectric layers to build a dielectric layer stack underneath the outer surface layer, characterized by the step of patterning the surface of at least one dielectric layer before applying a subsequent dielectric layer to the patterned surface.

Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

Abstract: Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.

Abstract: A light-emitting device assembly includes a concave optical collector with a cavity, an emitter array of light-emitting elements, a transparent substrate across an open end of the collector, a structured lens, and an angular filter. The emitter array is positioned within the package cavity and emits from its emission surface output light that exits the cavity from the open its end through the substrate, and enables selective activation of and emission from individual elements of the array. The structured lens is formed on or in the substrate, and comprises micro- or nano-structured elements resulting in an effective focal length less than an effective distance between the structured lens and the emission surface. The angular filter is positioned on or in the substrate or on the emission surface and exhibits decreasing transmission or a cutoff angle with increasing angle of incidence.

Abstract: The escape surface of a light emitting element includes features that include sloped surfaces that have angles of inclination that are based on the direction of peak light output from the light emitting element. If the light output exhibits a number of lobes at different directions, the sloped surfaces may have a corresponding number of different angles of inclination. To minimize the re-injection of light into adjacent features, adjacent features may be positioned to avoid having surfaces that directly face each other. The features may be shaped or positioned to provide a pseudo-random distribution of inclined surfaces across the escape surface, and multiple roughening processes may be used.

Abstract: A light-emitting apparatus can reduce a number of undriven or underdriven uLEDs in a uLED die. A method can include providing, by a power supply and during a first time, electrical power with a first voltage sufficient to operate a majority of micro light emitting diodes (uLEDs) of a uLED die to respective uLED drivers of the uLED die, driving the majority of uLEDs of the uLED die using the uLED drivers during the first time, providing, by the power supply and during a second time after the first time, electrical power with a second voltage, the second voltage higher than the first voltage and sufficient to operate uLEDs of the uLED die that are not operable by the first voltage, and driving the majority of the uLEDs and the uLEDs of the uLED die that are not operable by the first voltage during the second time.

Abstract: A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically.

Abstract: A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically. Multiple devices can be arranged as a light-emitting array.

Abstract: A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

Abstract: A device, system and method for producing enhanced external quantum efficiency (EQE) LED emission are disclosed. The device, system and method include a patterned layer configured to transform surface modes into directional radiation, a semiconductor layer formed as a III/V direct bandgap semiconductor to produce radiation, and a metal back reflector layer configured to reflect incident radiation. The patterned layer may be one-dimensional, two-dimensional or three-dimensional. The patterned layer may be submerged within the semiconductor layer or within the dielectric layer. The semiconductor layer is p-type gallium nitride (GaN). The patterned layer may be a hyperbolic metamaterials (HMM) layer and may include Photonic Hypercrystal (PhHc), or may be a low or high refractive index material or may be a metal.

Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

Abstract: Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.