Abstract: An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.

Abstract: A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.

Abstract: Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.

Abstract: A method of manufacturing a liquid crystal display holding a liquid crystal layer between a picture element substrate on which a pixel electrode driven by a thin film transistor is formed and a opposed counter substrate and forming a terminal to an external driving circuit on the picture element substrate, includes forming a semiconductor layer on the substrate, forming a gate insulating film on the semiconductor layer, forming a gate electrode on the gate insulating film, forming a source-drain region in the semiconductor layer, forming a source-drain wire on the substrate, forming a terminal wire on the substrate, forming insulating inorganic films on regions of the terminal wire on the external driving circuit and a display area sides, forming an organic resin film on the insulating inorganic film, and formingaconductive filmontheterminal wire. The conductive film has a predetermined distance to the organic resin film.

Abstract: A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region formed on opposing sides of the channel region, a gate insulating film provided so as to be in contact with the polysilicon film and containing oxygen, and a gate electrode provided in a position facing the channel region with the gate insulating film being interposed. The polysilicon film has a thickness larger than 50 nm and not larger than 150 nm. The polysilicon film contains hydrogen in a proportion not smaller than 0.5 atomic percent and not larger than 10 atomic percent. With such a structure, a semiconductor device attaining a large drain current and having a desired electric characteristic is provided.

Abstract: A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.

Abstract: A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.

Abstract: A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.

Abstract: A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.

Abstract: A thin film transistor (TFT) device including a first electrode including at least one of a gate, a source and a drain formed on a transparent insulating substrate, an insulating film layer covering both the first electrode and the transparent insulating substrate, and a transparent film electrode formed on the insulating film layer. The first electrode includes a first layer made of pure Al or Al alloy and a second layer, formed by an impurity selected from one of N, O, Si and C, added to the Al or Al alloy. The second layer of the first electrode is provided at an interconnection between the transparent film electrode and the first layer of the first electrode.

Abstract: The present invention aims to provide a rolling system and a rolling method capable of avoiding the occurrence of a pinch fold by effectively preventing the zigzag movement of a rear end portion of a material to be rolled. The rotational speeds (rolling speeds) of work rolls (2) of a rolling mill stand (F.sub.1) from which the rear end of a plate material (6) releases, and a succeeding rolling mill stand (F.sub.2) are controlled to the same value. Moreover, the tension between the rolling mill stand (F.sub.1) and the rolling mill stand (F.sub.2) is controlled to zero. The difference in tension between a work side and a drive side can be made null between the rolling mill stand (F.sub.1) and the rolling mill stand (F.sub.2). Similarly, the difference in tension between the work side and the drive side can be made null between the plurality of rolling mill stands (F.sub.2 to F.sub.n) during release of the rear end of the plate material (6).

Abstract: A roll replacing method and a roll replacing system for a chockless rolling mill, in which bearings for supporting the ends of work rolls are supported at an eccentric position of rotary bushes on housings, and the rotary bushes are turned to set a roll gap, includes, pulling out the chockless rolling mill from a rolling line onto a pullout track extending perpendicularly to the rolling line; fixing the housing on a drive side onto the pullout track at a nearest position, moving a support trestle perpendicularly to the pullout track, and fitting the support trestle between the pullout track and the upper and lower work rolls to support these work rolls on the support trestle; separating the housing on a work side, the trestle, and the upper and lower work rolls, as a unit, from each other and from the drive-side housing, and moving them onto the pullout track until they come to a halt; and moving the trestle and the upper and lower work rolls as a unit onto a roll replacement track perpendicular to the pullou