Abstract: The present invention is to allow rapid detection of such a defect as buried in a pixel positional deviation, expansion/contraction noise or sensing noise on an image. A relationship between an inspection reference pattern image and a pattern image to be inspected is identified during inspection to construct a mathematical model obtained by absorbing (applying fitting on) a pixel positional deviation, expansion/contraction noise or sensing noise on an image, and a defect is detected by comparing a new inspection reference pattern image (model image) obtained by simulating the mathematical model and a pattern image to be inspected.

Abstract: A pattern inspection apparatus uses a die-to-database comparison method which compares detected pattern data obtained from an optical image of a pattern of a plate to be inspected with first reference pattern data obtained from designed pattern data in combination with a die-to-die comparison method which compares the detected pattern data with second reference pattern data obtained by detecting an area to be a basis for repetition. A computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern areas, and automatically fetches an inspection area of the die-to-die comparison method.

Abstract: With a pattern inspection apparatus, image data corresponding to all patterns on an inspection target plate can be generated on the basis of scanned pattern data obtained with low-magnification optics different from ordinary inspection optics, or design pattern data. A pattern repeated area can be automatically detected from the image data. Therefore, die-to-die comparative inspection can be performed if the operator does not specify which dies to inspect. Thus, the inspection throughput can be improved.

Abstract: A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradiation of the second inspection light, and a space separation mechanism provided in the vicinity of an optical focal plane toward the pattern formed surface, and spatially separates an irradiation area of the first and second inspection lights such that the transmitted and reflected lights from the substrate are imaged in two discrete areas separated on the optical focal plane.

Abstract: In a defect inspecting apparatus, a differential interference optical system forms a differential interference image which is produced from an optical interference of images in a predetermined direction, the images corresponding to inspecting parts of a pattern formed on a mask. A control part varies the predetermined direction so as to cause the differential interference optical system to produce another differential interference image. An image pickup sensor picks up the differential interference images in accordance with the variation of the predetermined direction. A defect detecting unit detects a defect in the pattern formed on the mask from comparing the differential interference images with reference images, respectively.

Abstract: A pattern inspecting method, comprising preparing a sample having a first and a second inspection regions and an imaging device having a plurality of pixels, scanning the first inspection region to a first direction using the imaging device to obtain a first measurement pattern representing at least parts of the first inspection region, scanning the second inspection region to the first direction using the imaging device to obtain a second measurement pattern representing at least parts of the second inspection region, comparing the first measurement pattern and the second measurement pattern with each other to determine presence or absence of a defect formed on the sample, and controlling a scanning condition for scanning a pattern of the second inspection region by the imaging device so as to keep the same with the scanning condition when the pattern of the first inspection region is scanned by the imaging device.

Abstract: A pattern inspection apparatus uses a die-to-database comparison method which compares detected pattern data obtained from an optical image of a pattern of a plate to be inspected with first reference pattern data obtained from designed pattern data in combination with a die-to-die comparison method which compares the detected pattern data with second reference pattern data obtained by detecting an area to be a basis for repetition. A computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern areas, and automatically fetches an inspection area of the die-to-die comparison method.

Abstract: A pattern inspection apparatus uses a die-to-database comparison method which compares detected pattern data obtained from an optical image of a pattern of a plate to be inspected with first reference pattern data obtained from designed pattern data in combination with a die-to-die comparison method which compares the detected pattern data with second reference pattern data obtained by detecting an area to be a basis for repetition. A computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern areas, and automatically fetches an inspection area of the die-to-die comparison method.

Abstract: A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradiation of the second inspection light, and a space separation mechanism provided in the vicinity of an optical focal plane toward the pattern formed surface, and spatially separates an irradiation area of the first and second inspection lights such that the transmitted and reflected lights from the substrate are imaged in two discrete areas separated on the optical focal plane.

Abstract: A sample analyzing apparatus includes: an irradiation system which irradiates a charged particle onto a sample having a concave portion partially on a surface thereof; a light condensing reflecting mirror which condenses luminescence obtained from the surface based on the irradiation of the charged particle; a light detector which detects the luminescence guided to the light condensing reflecting mirror; a charged particle detector which detects the charged particle reflected from the surface of the sample as a reflection charged particle; and a signal processor which controls the irradiation system to irradiate the charged particle intermittently, which obtains a shape of the sample on the basis of a detection signal outputted from the charged particle detector, and which identifies a material of the sample on the basis of an attenuation characteristic of a detection signal outputted from the light detector in a period from a time point in which the intermittent irradiation of the charged particle by the irr

Abstract: A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradiation of the second inspection light, and a space separation mechanism provided in the vicinity of an optical focal plane toward the pattern formed surface, and spatially separates an irradiation area of the first and second inspection lights such that the transmitted and reflected lights from the substrate are imaged in two discrete areas separated on the optical focal plane.

Abstract: A defect inspection method comprises irradiating a sample including a pattern under inspection with light, acquiring measurement pattern data of the pattern based on intensity of light reflected by the sample, generating conversion data including pixel data corresponding to the measurement pattern data from design data of the sample, applying FIR filter process to the conversion data, reconstructing the conversion data by replacing pixel data having value not larger than first reference value with first pixel data, replacing pixel data having value larger than second reference value larger than first reference value with second pixel data having value larger than first pixel data, replacing pixel data having value larger than first reference value and less than second reference value with third pixel data having value between the value of first and second pixel data, the pixel data having larger value being replaced with third pixel data having higher value.

Abstract: In a defect inspecting apparatus, an illumination optical system illuminate a mask having a patterned surface, the optical beam passing through the mask is split into two beam components which is guided in first and second image pickup sensors. The pickup sensors has first and second pickup fields on the patterned surface, which pick up first and second parts of the mask image. The first and second pickup fields are parallel to each other and displaced from each other by (2n+1)×d/2 in the longitudinal direction thereof, where d denotes a longitudinal dimension of each pixel image in the first and second pick up fields and n denotes an integer equal to or larger than 0. The first and second parts of the mask image are merged to form a pattern image, and a defect in the mask is detected on the basis of the pattern image.

Abstract: A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.

Abstract: A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.

Abstract: A pattern inspection apparatus uses a die-to-database comparison method which compares detected pattern data obtained from an optical image of a pattern of a plate to be inspected with first reference pattern data obtained from designed pattern data in combination with a die-to-die comparison method which compares the detected pattern data with second reference pattern data obtained by detecting an area to be a basis for repetition. A computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern areas, and automatically fetches an inspection area of the die-to-die comparison method.

Abstract: A method and an apparatus for irradiating a measurement sample with an energy beam, a pattern being formed in the measurement sample, providing an optical system for detecting transmitted energy beam or reflected energy beam from the measurement sample, obtaining a pattern image, and comparing design data of the pattern and an image of the obtained image pattern to inspect a defect of the pattern formed in the measurement sample, wherein the measurement sample is a so-called photomask, a design pattern produced in producing the photomask is used as the design data of the pattern, and, in a procedure of performing inspection by comparing the obtained image and the design data, the design data is converted into an image (hereinafter referred to as wafer image) by a proper method, the wafer image being formed through a stepper used for actually forming the pattern of the photomask on a wafer, the obtained image actually measured is simultaneously converted into a wafer image by a proper method, and the defect is

Abstract: An automatic focusing apparatus comprises a stage holding a substrate, an objective lens disposed facing the substrate surface, an illumination optics illuminating the substrate surface with a spotted light beam from an oblique direction, a photodetector detecting reflected light from the substrate surface, a position detection circuit detecting a vertical position of the substrate surface from an electric signal obtained from the photodetector to output a position signal, a correction circuit monitoring the position signal in real time and subtracting a surplus exceeding a signal change corresponding to a surface shape change of the substrate from the position signal, when a change amount per unit time of the position signal exceeds a predetermined level and outputting a corrected position signal, and a stage control circuit controlling the vertical position of the stage based on the corrected position signal.

Abstract: An alignment method for substrates includes preparing an alignment apparatus having a movement mechanism to move a target substrate in horizontal and vertical directions, a rotation mechanism to rotate the substrate in a horizontal plane, an illumination tool to irradiate the substrate, an image sensor to pick up an substrate image, an edge position sensor to sense the substrate edge positions, and a control computer, transferring the substrate from a previous stage using the moving mechanism, measuring the substrate position using the image sensor which picks up the image on a back surface of the substrate, while irradiating the substrate with the illumination tool from a sidewise direction, calculating positional shifts regarding X, Y, and ? of the mask, using the edge position sensor and control computer, correcting the positional shifts of the mask by the moving and rotation mechanisms, and transferring the substrate to a next stage.

Abstract: In a defect inspecting apparatus, an illumination optical system illuminate a mask having a patterned surface, the optical beam passing through the mask is split into two beam components which is guided in first and second image pickup sensors. The pickup sensors has first and second pickup fields on the patterned surface, which pick up first and second parts of the mask image. The first and second pickup fields are parallel to each other and displaced from each other by (2n+1)×d/2 in the longitudinal direction thereof, where d denotes a longitudinal dimension of each pixel image in the first and second pick up fields and n denotes an integer equal to or larger than 0. The first and second parts of the mask image are merged to form a pattern image, and a defect in the mask is detected on the basis of the pattern image.