Abstract: A piezoelectric element having an improved piezoelectric constant is provided, and a liquid discharge head, an ultrasonic motor, and a dust removing device, each of which uses the above piezoelectric element, are also provided. A piezoelectric element at least includes a pair of electrodes and a piezoelectric material provided in contact with the pair of electrodes, the piezoelectric material is formed of an aggregate of crystal grains containing barium titanate as a primary component, and among the crystal grains of the aggregate, crystal grains at least in contact with the electrodes have dislocation layers in the grains. A liquid discharge head, an ultrasonic motor, and a dust removing device each use the above piezoelectric element.

Abstract: Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 ?m or more and 30 ?m or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x?BaTiO3-y?CaTiO3-z?CaZrO3, provided that x, y, z, x?, y?, and z? satisfy x+y+z=1, x?+y?+z?=1, 0?x??0.15, 0.85?y??1, 0?z??0.05, x>x?, 0<y<y?, and z>0.

Abstract: Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 ?m or more and 30 ?m or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x?BaTiO3-y?CaTiO3-z?CaZrO3, provided that x, y, z, x?, y?, and z? satisfy x+y+z=1, x?+y?+z?=1, 0?x??0.15, 0.85?y??1, 0?z?0.05, x>x?, 0<y<y?, and z>0.

Abstract: A sodium niobate powder includes sodium niobate particles having a shape of a cuboid and having a side average length of 0.1 ?m or more and 100 ?m or less, wherein at least one face of each of the sodium niobate particles is a (100) plane in the pseudocubic notation and a moisture content of the sodium niobate powder is 0.15 mass % or less. A method for producing a ceramic using the sodium niobate powder is provided. A method for producing a sodium niobate powder includes a step of holding an aqueous alkali dispersion liquid containing a niobium component and a sodium component at a pressure exceeding 0.1 MPa, a step of isolating a solid matter from the aqueous dispersion liquid after the holding, and a step of heat treating the solid matter at 500° C. to 700° C.

Abstract: A sodium niobate powder includes sodium niobate particles having a shape of a cuboid and having a side average length of 0.1 ?m or more and 100 ?m or less, wherein at least one face of each of the sodium niobate particles is a (100) plane in the pseudocubic notation and a moisture content of the sodium niobate powder is 0.15 mass % or less. A method for producing a ceramic using the sodium niobate powder is provided. A method for producing a sodium niobate powder includes a step of holding an aqueous alkali dispersion liquid containing a niobium component and a sodium component at a pressure exceeding 0.1 MPa, a step of isolating a solid matter from the aqueous dispersion liquid after the holding, and a step of heat treating the solid matter at 500° C. to 700° C.

Abstract: Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 ?m or more and 30 ?m or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x?BaTiO3-y?CaTiO3-z?CaZrO3, provided that x, y, z, x?, y?, and z? satisfy x+y+z=1, x?+y?+z?=1, 0?x??0.15, 0.85?y??1, 0?z?0.05, x>x?, 0<y<y?, and z>0.

Abstract: A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

Abstract: A piezoelectric element having an improved piezoelectric constant is provided, and a liquid discharge head, an ultrasonic motor, and a dust removing device, each of which uses the above piezoelectric element, are also provided. A piezoelectric element at least includes a pair of electrodes and a piezoelectric material provided in contact with the pair of electrodes, the piezoelectric material is formed of an aggregate of crystal grains containing barium titanate as a primary component, and among the crystal grains of the aggregate, crystal grains at least in contact with the electrodes have dislocation layers in the grains. A liquid discharge head, an ultrasonic motor, and a dust removing device each use the above piezoelectric element.

Abstract: A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Abstract: A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

Abstract: A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 ?m tin in depth according to a predetermined line width.

Abstract: A powder material which can electrochemically store and release lithium ions rapidly in a large amount is provided. In addition, an electrode structure for an energy storage device which can provide a high energy density and a high power density and has a long life, and an energy storage device using the electrode structure are provided. In a powder material which can electrochemically store and release lithium ions, the surface of particles of one of silicon metal and tin metal and an alloy of any thereof is coated by an oxide including a transition metal element selected from the group consisting of W, Ti, Mo, Nb, and V as a main component. The electrode structure includes the powder material. The battery device includes a negative electrode having the electrode structure, a lithium ion conductor, and a positive electrode, and utilizes an oxidation reaction of lithium and a reduction reaction of lithium ion.

Abstract: A powder material which can electrochemically store and release lithium ions rapidly in a large amount is provided. In addition, an electrode structure for an energy storage device which can provide a high energy density and a high power density and has a long life, and an energy storage device using the electrode structure are provided. In a powder material which can electrochemically store and release lithium ions, the surface of particles of one of silicon metal and tin metal and an alloy of any thereof is coated by an oxide including a transition metal element selected from the group consisting of W, Ti, Mo, Nb, and V as a main component. The electrode structure includes the powder material. The battery device includes a negative electrode having the electrode structure, a lithium ion conductor, and a positive electrode, and utilizes an oxidation reaction of lithium and a reduction reaction of lithium ion.

Abstract: Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of ?10° or more to +10° or less with respect to the perpendicular direction.

Abstract: A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 ?m in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.

Abstract: A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 ?m tin in depth according to a predetermined line width.

Abstract: Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.

Abstract: A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Abstract: To provide a method of manufacturing a nano structure having a pattern of 2 ?m or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 ?m or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed.

Abstract: Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.