Patents by Inventor Toshiaki Aiba

Toshiaki Aiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7597006
    Abstract: An adhesiveness evaluation method that can be used to accurately evaluate the adhesiveness of a selected specific micro-spot of a specimen 1 of a small size. A part to be measured 5 is produced by isolating it from a surrounding part 4 and fixing it to a ?-probe 6, which is a support member. Then, the pulling force is applied to the part to be measured 5 using the ?-probe 6, which is the support member and which is fixed to it, to evaluate the adhesiveness of the part to be measured 5.
    Type: Grant
    Filed: June 8, 2005
    Date of Patent: October 6, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshiaki Aiba
  • Publication number: 20090162750
    Abstract: A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.
    Type: Application
    Filed: February 27, 2009
    Publication date: June 25, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Soichiro Kawakami, Norishige Kakegawa, Akio Kashiwazaki, Toshiaki Aiba, Rie Ueno, Mikio Shimada, Kaoru Ojima, Takashi Noma
  • Publication number: 20080298744
    Abstract: A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction.
    Type: Application
    Filed: May 27, 2008
    Publication date: December 4, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Shinan Wang, Kenji Tamamori, Taiko Motoi, Masahiko Okunuki, Haruhito Ono, Toshiaki Aiba
  • Publication number: 20080283487
    Abstract: A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material.
    Type: Application
    Filed: April 24, 2008
    Publication date: November 20, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Shinan Wang, Kenji Tamamori, Taiko Motoi, Masahiko Okunuki, Haruhito Ono, Toshiaki Aiba
  • Publication number: 20080286892
    Abstract: A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.
    Type: Application
    Filed: May 12, 2008
    Publication date: November 20, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Shinan Wang, Kenji Tamamori, Taiko Motoi, Masahiko Okunuki, Haruhito Ono, Toshiaki Aiba
  • Publication number: 20080283493
    Abstract: A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.
    Type: Application
    Filed: May 14, 2008
    Publication date: November 20, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kenji Tamamori, Masahiko Okunuki, Shinan Wang, Taiko Motoi, Haruhito Ono, Toshiaki Aiba
  • Publication number: 20080186438
    Abstract: A first film is formed on a substrate by oblique deposition and thereafter a second film is formed on the first film by sputtering.
    Type: Application
    Filed: February 5, 2008
    Publication date: August 7, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Akira Sakai, Toshiaki Aiba, Yohei Ishida
  • Publication number: 20080003503
    Abstract: A powder material which can electrochemically store and release lithium ions rapidly in a large amount is provided. In addition, an electrode structure for an energy storage device which can provide a high energy density and a high power density and has a long life, and an energy storage device using the electrode structure are provided. In a powder material which can electrochemically store and release lithium ions, the surface of particles of one of silicon metal and tin metal and an alloy of any thereof is coated by an oxide including a transition metal element selected from the group consisting of W, Ti, Mo, Nb, and V as a main component. The electrode structure includes the powder material. The battery device includes a negative electrode having the electrode structure, a lithium ion conductor, and a positive electrode, and utilizes an oxidation reaction of lithium and a reduction reaction of lithium ion.
    Type: Application
    Filed: June 11, 2007
    Publication date: January 3, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Soichiro Kawakami, Hidetoshi Tsuzuki, Toshiaki Aiba, Rie Ueno, Masatoshi Watanabe
  • Patent number: 7291962
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Grant
    Filed: October 20, 2004
    Date of Patent: November 6, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Patent number: 7208276
    Abstract: Nucleic acid probes arranged on a nucleic acid chip substrate in a matrix form can be analyzed quantitatively by TOF-SIMS with accuracy by forming a phosphorus-containing area which can be used as a standard on the substrate.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: April 24, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiromitsu Takase, Tadashi Okamoto, Toshiaki Aiba, Hiroyuki Hashimoto
  • Patent number: 7173253
    Abstract: A method of moving an object includes a step of fixing the object to an object-moving device, a step of moving the object to a prescribed position by the object-moving device, and a step of releasing the object from the object-moving device. The fixing step includes forming a deposit for fixation of the object to the object-moving device by applying a first corpuscular beam in a first gas to form a deposit. The releasing step includes etching the deposit by applying a second corpuscular beam in contact with a second gas.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: February 6, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshiaki Aiba
  • Publication number: 20060131269
    Abstract: A method of moving an object comprises a step of fixing the object to an object-moving means, a step of moving the object to a prescribed position by the object-moving means, and a step of releasing the object from the object-moving means; wherein the fixing step comprises forming a deposit, for fixation of the object to the object-moving means by applying a first corpuscular beam in a first gas to form a deposit; and the releasing step comprises etching the deposit by applying a second corpuscular beam in contact with a second gas.
    Type: Application
    Filed: January 30, 2004
    Publication date: June 22, 2006
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Toshiaki Aiba
  • Publication number: 20050274198
    Abstract: An adhesiveness evaluation method can accurately evaluate the adhesiveness of a selected specific micro-spot of a specimen 1 of a small size. A part to be measured 5 is produced by isolating it from a surrounding part 4 and a ?-probe 6, which is a support member, is fixed to the part to be measured 5. Then, pulling force is applied to the part to be measured 5 by means of the ?-probe 6, which is the support member and fixed to it, to evaluate the adhesiveness of the part to be measured 5.
    Type: Application
    Filed: June 8, 2005
    Publication date: December 15, 2005
    Applicant: Canon Kabushiki Kaisha
    Inventor: Toshiaki Aiba
  • Patent number: 6917146
    Abstract: An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: July 12, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Patent number: 6888296
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: May 3, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20050052108
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Application
    Filed: October 20, 2004
    Publication date: March 10, 2005
    Applicant: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Patent number: 6851998
    Abstract: An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.
    Type: Grant
    Filed: July 9, 2004
    Date of Patent: February 8, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiaki Aiba, Masato Yamanobe, Taiko Motoi, Rie Ueno, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20040245905
    Abstract: An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.
    Type: Application
    Filed: July 9, 2004
    Publication date: December 9, 2004
    Applicant: CANNON KABUSHIKI KAISHA
    Inventors: Toshiaki Aiba, Masato Yamanobe, Taiko Motoi, Rie Ueno, Kumi Nakamura, Masaaki Shibata
  • Patent number: 6803704
    Abstract: To provide a plate of high resolution and large area. The channel plate configured by including a substrate, a first electrode placed on the top face of the substrate, and a second electrode placed on the bottom face of the substrate, wherein the substrate is a porous element having a plurality of pores extending therethrough, and the porous element is formed by a compound including aluminum, and the porous element has an electron multiplier on a wall surface of the pore.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: October 12, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Mitsuru Ohtsuka, Tohru Den, Toshiaki Aiba
  • Publication number: 20040152113
    Abstract: Nucleic acid probes arranged on a nucleic acid chip substrate in a matrix form can be analyzed quantitatively by TOF-SIMS with accuracy by forming a phosphorus-containing area which can be used as a standard on the substrate.
    Type: Application
    Filed: December 4, 2003
    Publication date: August 5, 2004
    Inventors: Hiromitsu Takase, Tadashi Okamoto, Toshiaki Aiba, Hiroyuki Hashimoto