Patents by Inventor Toshiaki Aiba

Toshiaki Aiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6677595
    Abstract: A specimen holder including a specimen-holding table including a plane for placing a specimen, and a pair of members protruding from the plane, with the specimen-holding table being disposed between the pair of members. Here, the plane of the specimen-holding table is formed at an angle from a plane including top portions of the pair of members protruding from the plane of the specimen-holding table. The invention provides an electron microscope holder and a spacer used therein, which provide a high X-ray detection efficiency even when EDX analysis using an X-ray analyzer whose center axis only makes a small angle with a specimen-holding surface is performed on a specimen to be sectionally observed by TEM produced by FIB processing.
    Type: Grant
    Filed: April 25, 2000
    Date of Patent: January 13, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshiaki Aiba
  • Patent number: 6541386
    Abstract: Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpiece having been irradiated with the particle beam, to form a narrow pore in the workpiece.
    Type: Grant
    Filed: January 24, 2001
    Date of Patent: April 1, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiaki Aiba, Hidetoshi Nojiri, Taiko Motoi, Tohru Den, Tatsuya Iwasaki
  • Publication number: 20020096986
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Application
    Filed: March 4, 2002
    Publication date: July 25, 2002
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20020088714
    Abstract: To provide a plate of high resolution and large area. The channel plate configured by including a substrate, a first electrode placed on the top face of the substrate, and a second electrode placed on the bottom face of the substrate, wherein the substrate is a porous element having a plurality of pores extending therethrough, and the porous element is formed by a compound including aluminum, and the porous element has an electron multiplier on a wall surface of the pore.
    Type: Application
    Filed: October 5, 2001
    Publication date: July 11, 2002
    Inventors: Taiko Motoi, Mitsuru Ohtsuka, Tohru Den, Toshiaki Aiba
  • Patent number: 6380665
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: April 30, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20010010973
    Abstract: Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpiece having been irradiated with the particle beam, to form a narrow pore in the workpiece.
    Type: Application
    Filed: January 24, 2001
    Publication date: August 2, 2001
    Inventors: Toshiaki Aiba, Hidetoshi Nojiri, Taiko Motoi, Tohru Den, Tatsuya Iwasaki
  • Patent number: 6259191
    Abstract: An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.
    Type: Grant
    Filed: November 10, 1999
    Date of Patent: July 10, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masanori Mitome, Masahiro Okuda, Toshiaki Aiba, Shigeki Matsutani, Kazuhiro Takada, Akira Asai
  • Patent number: 6214738
    Abstract: Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpiece having been irradiated with the particle beam, to form a narrow pore in the workpiece.
    Type: Grant
    Filed: December 20, 1999
    Date of Patent: April 10, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiaki Aiba, Hidetoshi Nojiri, Taiko Motoi, Tohru Den, Tatsuya Iwasaki
  • Patent number: 6005334
    Abstract: An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.
    Type: Grant
    Filed: April 28, 1997
    Date of Patent: December 21, 1999
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masanori Mitome, Masahiro Okuda, Toshiaki Aiba, Shigeki Matsutani, Kazuhiro Takada, Akira Asai