Abstract: An optical module for an optical device and an optical fiber is constituted by a pre-molded plastic package. In forming the plastic package, the main flowing direction of the molding resin is substantially parallel with the optical axis of the optical fiber. The optical module is formed by molding the resin by injection using pressure and then solidifying the resin. When the plastic package is formed by comprehensive molding, the flowing direction of the resin is parallel with the optical axis direction of the optical fiber to be installed in the optical module. As a result, for comprehensive molding, the molding pressure applied to the optical fiber is reduced. By using the resin case that is formed, the resulting package exhibits high rigidity and low thermal expansion properties in connection with the flowing direction of the resin, thus reducing the external stress and thermal stress applied to the optical fiber.

Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 provided on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of the core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.

Abstract: Semiconductor devices, semiconductor wafers, and semiconductor modules are provided, wherein: the semiconductor device has a small warp; damage at the chip edge and cracks occurring in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility. The semiconductor includes a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on the same plane.

Abstract: The present invention provides a biphenyl based epoxy resin comprising a curing agent and an inorganic filler containing an alkali alkaline earth metal oxide wherein the epoxy resin has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

Abstract: In order to provide a low-cost and high heat-radiating electronic circuit device featuring high compactness, little warpage, high air tightness, high moldability, high mass productivity, high reliability against thermal shocks, and high oil-proof reliability, a module structure made by packing a whole multi-layer circuit board which connects a semiconductor operating element, semiconductor memory elements, and passive elements thereon and part of a supporting material on which said multi-layer circuit board is placed into a single package by transfer-molding; wherein said multi-layer circuit board and said supporting material are bonded together with a compound metallic material made up from copper oxide and at least one metal selected from a set of gold, silver, and copper.

Abstract: Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility.

Abstract: A resin-sealed electronic circuit apparatus capable of maintaining a high heat-dissipating property and packaging density in applications where high hermetic-sealing property and durability are required. The electronic circuit apparatus comprises at least two wiring circuit boards 12 and 13 on which electronic components are mounted. The wiring circuit boards 12 and 13 are fixed to a heat sink 14 having a high heat conductivity via an adhesive 9 and 10. The entirety of the wiring circuit boards 12 and 13 and heat sink 14, as well as a part of an external connection terminal 8 are hermetically sealed and integrally molded by a thermosetting resin composition 7. The electronic circuit apparatus is small and highly reliable and can be provided at low cost.

Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 provided on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of the core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.

Abstract: At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.

Abstract: The present invention is to reduce the package cost and secure the high reliability in an optical module having an optical device and an optical fiber.

Abstract: An optical module for an optical device and an optical fiber is constituted by a pre-molded plastic package. In forming the plastic package, the main flowing direction of the molding resin is substantially parallel with the optical axis of the optical fiber. The optical module is formed by molding the resin by injection using pressure and then solidifying the resin. When the plastic package is formed by comprehensive molding, the flowing direction of the resin is parallel with the optical axis direction of the optical fiber to be installed in the optical module. As a result, for comprehensive molding, the molding pressure applied to the optical fiber is reduced. By using the resin case that is formed, the resulting package exhibits high rigidity and low thermal expansion properties in connection with the flowing direction of the resin, thus reducing the external stress and thermal stress applied to the optical fiber.

Abstract: Described is a semiconductor device comprising a plurality of inner leads each made of copper or an alloy thereof; a heat sink made of copper or an alloy thereof, bonded to one end of each of a plurality of inner leads via an insulating adhesive layer and having a semiconductor element mounted on the heat sink via a metal wire; a plurality of metal wires each electrically connecting the semiconductor element and each of the plurality of inner leads; an encapsulating resin encapsulating the semiconductor element and the plurality of metal wires; and a plurality of outer leads protruded outside of the encapsulating resin and bent in the gullwing form. The encapsulating resin has been added with an additive forming a compound with an ionic impurity so that water at the peeling portion becomes near neutral, which prevents reaction and easy elution of copper, thereby preventing Cu migration.

Abstract: In a semiconductor device which is assembled by making use of a lead frame 1 with a heat radiation plate 3 in which the lead frame 1 and the heat radiation plate 3 made of copper or copper alloy are joined by an adhesive layer 2 formed on a surface of the heat radiation plate 3 and at least a part of the inner leads 1a of the lead frame 1 is applied of a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of inconveniences such as leakage and shorting due to ion migration can be prevented.

Abstract: The present invention is to reduce the package cost and secure the high reliability in an optical module having an optical device and an optical fiber.

Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 proved on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.

Abstract: An optical module for an optical device and an optical fiber is constituted by a pre-molded plastic package. In forming the plastic package, the main flowing direction of the molding resin is substantially parallel with the optical axis of the optical fiber. The optical module is formed by molding the resin by an injection method using pressure and then solidifying the resin. When the plastic package is formed by comprehensive molding, the flowing direction of the resin is parallel with the optical axis direction of the optical fiber to be installed in the optical module. As a result, for comprehensive molding, the molding pressure applied to the optical fiber is reduced. By using the resin case that is formed, the resulting package exhibits high rigidity and low thermal expansion properties in connection with the flowing direction of the resin, thus reducing the external stress and thermal stress applied to the optical fiber.

Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 provided on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.

Abstract: A method of forming a semiconductor device having a multi-layered wiring structure that includes a conductor layer to be electrically connected to a packaging substrate, with the multi-layered wiring structure being provided on a circuit formation surface of a semiconductor chip. Ball-like terminals are formed, disposed in a grid array on the surface of the multi-layered wiring structure on the packaging substrate side. The multi-layered wiring structure is formed to include a buffer layer for relieving a thermal stress provided between the semiconductor chip and the packaging substrate, due to the packaging procedure. In the semiconductor device formed, the wiring distance is shorter than that of a conventional semiconductor device, so that an inductance component becomes smaller, to thereby increase signal speed.

Abstract: A method of forming a semiconductor device having a multi-layered wiring structure that includes a conductor layer to be electrically connected to a packaging substrate, with the multi-layered wiring structure being provided on a circuit formation surface of a semiconductor chip. Ball-like terminals are formed, disposed in a grid array on the surface of the multi-layered wiring structure on the packaging substrate side. The multi-layered wiring structure is formed to include a buffer layer for relieving a thermal stress provided between the semiconductor chip and the packaging substrate, due to the packaging procedure. In the semiconductor device formed, the wiring distance is shorter than that of a conventional semiconductor device, so that an inductance component becomes smaller, to thereby increase signal speed.

Abstract: An optical module for an optical device and an optical fiber is constituted by a pre-molded plastic package. In forming the plastic package, the main flowing direction of the molding resin is substantially parallel with the optical axis of the optical fiber. The optical module is formed by molding the resin by an injection method using pressure and then solidifying the resin. When the plastic package is formed by comprehensive molding, the flowing direction of the resin is parallel with the optical axis direction of the optical fiber to be installed in the optical module. As a result, for comprehensive molding, the molding pressure applied to the optical fiber is reduced. By using the resin case that is formed, the resulting package exhibits high rigidity and low thermal expansion properties in connection with the flowing direction of the resin, thus reducing the external stress and thermal stress applied to the optical fiber.