Abstract: The present invention is to provide a small-sized dryness/wetness responsive sensor that detects a galvanic current with a high sensitivity as a principle of operation. According to one embodiment of the present invention, a dryness/wetness responsive sensor comprises a thin wire made of a first metal and a thin wire made of a second metal, the second metal is different from the first metal, the thin wire of the first metal and the thin wire of the second metal are disposed in juxtaposition with each other on an insulating substrate, and a surface state of a part between the thin wire of the first metal and the thin wire of the second metal is hydrophilic or hydrophobic.

Abstract: The forming voltage of a variable resistance device used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film is sandwiched between a lower electrode and an upper electrode, an island-shaped/particulate region of amorphous aluminum oxide or aluminum oxycarbide is formed on the metal oxide film. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the variable resistance device, is formed from the beginning under the island-shaped or particulate aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.

Abstract: A dryness/wetness responsive sensor having decreased size, and improved sensitivity and responsiveness. The present invention comprises a thin wire of a first metal and a thin wire of a second metal, which is different from the first metal, wherein the thin wires run in juxtaposition with each other on an insulating substrate, and wherein the spacing between the first thin wire and the second thin wire is in the range of 5 nm or more and less than 20 ?m.

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

Abstract: To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconductor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Abstract: To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconducdor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Abstract: To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconducdor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Abstract: After forming a pure silicon oxide film on respective surfaces of an n-type well and a p-type well, an oxygen deficiency adjustment layer made of an oxide of 2A group elements, an oxide of 3A group elements, an oxide of 3B group elements, an oxide of 4A group elements, an oxide of 5A group elements or the like, a high dielectric constant film, and a conductive film having a reduction catalyst effect to hydrogen are sequentially deposited on the silicon oxide film, and the substrate is heat treated in the atmosphere containing H2, thereby forming a dipole between the oxygen deficiency adjustment layer and the silicon oxide film. Then, the conductive film, the high dielectric constant film, the oxygen deficiency adjustment layer, the silicon oxide film and the like are patterned, thereby forming a gate electrode and a gate insulating film.

Abstract: The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a main surface of a semiconductor substrate, the main surface of the semiconductor substrate is heat-treated in a non-oxidation atmosphere. Next, an oxygen supplying layer made of hafnium oxide deposited by ALD and having a thickness smaller than that of the high dielectric layer is formed on the high dielectric layer, and a cap layer made of tantalum nitride is formed. Thereafter, the main surface of the semiconductor substrate is heat-treated.

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract: A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.

Abstract: After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.

Abstract: A technology capable of improving the yield in a manufacturing process of a MISFET with a gate electrode formed of a metal silicide film. A gate insulating film is formed on a semiconductor substrate and silicon gate electrodes formed of a polysilicon film are formed on the gate insulating film. Then, after a silicon oxide film is formed so as to cover the silicon gate electrodes, a surface of the silicon oxide film is polished by CMP, thereby exposing the surface of the silicon gate electrodes. Subsequently, a patterned insulating film is formed on the silicon oxide film. Thereafter, an adhesion film is formed on the silicon oxide film and the insulating film. Then, a nickel film is formed on the adhesion film. Thereafter, a silicide reaction is caused to occur between the silicon gate electrode and the nickel film via the adhesion film.

Abstract: Through an improvement of module size increase due to mounting a single passive element on a substrate and an increase in the mounting cost, to provide a highly reliable, high performance and small sized electronic circuit component which permits to integrate a variety of electronic parts such as capacitors, inductors and resistors in a high density with low cost. The electronic circuit component comprises an insulator substrate, a plurality of electrodes having different areas provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion.

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract: After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract: In a p channel MOS transistor and an n channel MOS transistor each having a gate electrode made of metal on a gate insulating film made of oxide whose relative dielectric constant is higher than that of silicon oxide, threshold voltage thereof is reduced. A gate insulating film of a p channel MOS transistor and an n channel MOS transistor is made of hafnium oxide, a gate electrode of the p channel MOS transistor is made of ruthenium, and a gate electrode of the n channel MOS transistor is made of alloy containing ruthenium as a base material and hafnium.