Abstract: An electronic device can operate in two operation modes of a “mouse mode” and a “tablet mode”. In the mouse mode, a program is executed in response to an input to a liquid crystal panel implemented by a display-integrated tablet. An operation screen of the program created as a result of execution of the program is displayed on a main screen. In the tablet mode, a program is executed in response to an input to the liquid crystal panel. An operation screen of the program generated as a result of execution of the program is displayed on the liquid crystal panel. In a sub application “book”, information on history of electronic books that have been selected so far for viewing on a book viewer is stored and a soft key indicative of each electronic book is displayed on the liquid crystal panel in the order in accordance with the history information.

Abstract: In a rotating electrical machine, when a stator winding is wound in concentrated winding, an improvement in performance is achieved by reducing a magnetomotive force harmonic without reducing a fundamental wave magnetic flux generated by a stator. A rotating electrical machine (10) includes a rotor (18), and two stators (14, 16) opposed with the rotor (18) being interposed therebetween either on both sides of the rotor (18) in the axial direction or on both sides of the rotor (18) in the radial direction. Stator windings (22) provided in a plurality of portions in the circumferential direction of each stator (14, 16) are wound in concentrated winding. The directions of magnetic fluxes generated by stator windings (22) having the same phase in the stators (14, 16) are in mutually opposite directions with respect to either the axial direction or the radial direction.

Abstract: A horizontal evaluation data generation section calculates an average value of pixel signals in a vertical optical black region based on given pixel data in the horizontal optical black region and outputs the calculated average value to an evaluation section. A vertical evaluation data generation section calculates an average value of pixel signals in a vertical optical black region based on given pixel data in the vertical optical black region and outputs the calculated average value to the evaluation section. The evaluation section outputs a gain value according to the difference between the two sent average values to a computing section. A smear information memory stores pixel signals in a line in the vertical optical black region. The computing section multiplies the pixel data stored in the smear information memory by the sent gain value, and subtracts the multiplied pixel data from the pixel data imaged by the CCD 5.

Abstract: A high-voltage pulse generating circuit includes a direct current power source, a transformer, a switching device and a switching control circuit. The transformer includes a primary winding and a secondary winding. The switching device is connected between the direct current power source and the primary winding. The switching control circuit controls the switching device to be in the non-conductive state after the switching device is set in the conductive state during first conductive time and further controls the switching device to be in the conductive state during second conductive time after one of the voltages of the primary winding and the secondary winding excess the predetermined value and then to be in the non-conductive state.

Abstract: A horizontal evaluation data generation section calculates an average value of pixel signals in a vertical optical black region based on given pixel data in the horizontal optical black region and outputs the calculated average value to an evaluation section. A vertical evaluation data generation section calculates an average value of pixel signals in a vertical optical black region based on given pixel data in the vertical optical black region and outputs the calculated average value to the evaluation section. The evaluation section outputs a gain value according to the difference between the two sent average values to a computing section. A smear information memory stores pixel signals in a line in the vertical optical black region. The computing section multiplies the pixel data stored in the smear information memory by the sent gain value, and subtracts the multiplied pixel data from the pixel data imaged by the CCD.

Abstract: The present invention is to provide a low-cost solid polymer electrolyte having a low glass transition temperature and excellent proton conductivity and is also to provide a method for producing the solid polymer electrolyte and a membrane electrode assembly using the solid polymer electrolyte. The solid polymer electrolyte is a copolymer represented by the following formula (1): wherein X is an electron attractive group containing no aromatic ring, Y is single bond or —(CH2)p—, p is 1 to 10, m+n+l=1, m>0, n>0, and l?0. A method for producing the solid polymer electrolyte includes the steps of: copolymerizing acrylonitrile or acrylic acid and vinyl sulfonic acid ester; converting a sulfonic acid ester group in a copolymer obtained by the copolymerization step to a sulfonic acid group. A membrane electrode assembly is provided with a polymer electrolyte membrane and/or an electrode containing the solid polymer electrolyte.

Abstract: This manufacturing method for an electrolyte membrane includes a mixing step of obtaining a resin composition by mixing a polyvinylsulfonic acid resin, a polyethylene resin, and an amine-based surfactant in a solvent, and a formation step of forming the resin composition as the electrolyte membrane.

Abstract: An electrolyte having a structure where a fluorinated hydrophilic segment A represented by -E2-[Rf-E1]m- and a hydrocarbon hydrophobic segment B are alternately bonded to each other through chemical bond and a production process therefor, and an electrolyte membrane, a production process therefor, a catalyst layer and a fuel cell using the same. Rf is a linear or a branched perfluoro chain having one or more carbon atoms, E1, and E2 are each a proton conductive portion represented by Formula —(CONM)i1(CO)i2(SO2NM)i3(SO2)i4— (0?i1, 0?i2?1, 0?i3, 0?i4?1, 0<i1+i3, i1 to i4 are each an integer, and M is proton, alkali metal, or alkali earth metal), 2?m (m is an integer), and Rf, E1, and E2 may be each arbitrarily selected in the repeating unit.

Abstract: A fuel cell-purpose electrolyte material having a structural unit represented by a general formula (1): where n is 0 or a positive integer, and R1 represents H or CH3, and R2 represents (CH2)mSO3H (m is 0 or a positive integer).

Abstract: A semiconductor light emitting device includes an LED element, a lead frame on which the LED is mounted, a lead frame electrically connected to the LED element via a wire, transparent resin formed on the LED element and on the lead frames, and light shielding resin having a reflectance higher than the reflectance of the transparent resin, surrounding the perimeter of the LED. The transparent resin includes a lens portion constituting a lens on the LED, and a holding portion holding the lead frame.

Abstract: A horizontal evaluation data generation section calculates an average value of pixel signals in a vertical optical black region based on given pixel data in the horizontal optical black region and outputs the calculated average value to an evaluation section. A vertical evaluation data generation section calculates an average value of pixel signals in a vertical optical black region based on given pixel data in the vertical optical black region and outputs the calculated average value to the evaluation section. The evaluation section outputs a gain value according to the difference between the two sent average values to a computing section. A smear information memory stores pixel signals in a line in the vertical optical black region. The computing section multiplies the pixel data stored in the smear information memory by the sent gain value, and subtracts the multiplied pixel data from the pixel data imaged by the CCD 5.

Abstract: A semiconductor laser device and optical pickup in which the reflectance of the side beam at a header portion will not adversely affect the characteristics of the optical pickup, and superior in productivity, and a method of fabricating such a semiconductor laser device are obtained. A reflector is attached on a side beam incident region of a leading end plane of a header mounted with a laser chip that emits a laser beam. Said side beam is one of the two side beams generated by the reflected ±first order beams and fed back through the optical system returning towards the header portion to strike the side beam incident region. The reflector reflects side beam outside the optical system.

Abstract: A semiconductor light emitting device includes an LED element, a lead frame on which the LED is mounted, a lead frame electrically connected to the LED element via a wire, transparent resin formed on the LED element and on the lead frames, and light shielding resin having a reflectance higher than the reflectance of the transparent resin, surrounding the perimeter of the LED. The transparent resin includes a lens portion constituting a lens on the LED, and a holding portion holding the lead frame.

Abstract: A semiconductor laser device has an n-type AlGaAs first cladding layer 2, a multiple quantum well active layer 3, and a p-type AlGaAs second cladding layer 4 formed in this order and supported by an n-type GaAs substrate 1. The multiple quantum well active layer 3 has two quantum well layers 3a and barrier layers 3b provided on both sides of each quantum well layer 3a. The quantum well layers 3a are each made of In1-v1Gav1As1-w1Pw1, while the barrier layers 3b are each made of In1-v2Gav2As1-w2Pw2. Here, v1 and v2 satisfy v1<v2, while w1 and w2 satisfy w1<w2. The barrier layers have a tensile strain with respect to the GaAs substrate, while the well layers have a compressive strain with respect to the GaAs substrate.

Abstract: A micro array chip is formed by high-speed in jection molding. A chip body has a thickness of 1 mm and each well has a capacity of 1.2 &mgr;L with the bottom having a wall thickness of 250 &mgr;m. An opening of each well is surrounded by an annular protrusion part, which is raised from a surface of the chip body by a height of 200 &mgr;m. The openings of wells may be closed with a sheet of sealant made of aluminum or a resin. An overall shape of the micro array chip is rectangular and is a flat plate with a level bottom surface. Therefore, the micro array chip can be used with a heat block in flat plate form, which is independent of chip specifications such as a number of wells and their shape.

Abstract: There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem 100 provided with a plurality of lead pins 121 through 124, a sub-mount 160 that is die-bonded onto the stem 100 and has its surface formed integrally with a monitoring PD 140 and two semiconductor laser elements 131 and 132 that are die-bonded onto the sub-mount 160 and have emission light monitored by the monitoring PD 140. A first bonding surface i.e. anode electrode 183 of the monitoring PD 140 and a second bonding surface i.e. end surface 123a of a lead pin 123 that is approximately perpendicular to the first bonding surface are wire-bonded to each other.

Abstract: Erythromycin derivatives or salt thereof having excellent antibacterial activity against a typical acid-fast mycobacteria and useful as antibacterial agent, which is represented by the following general formula: 1

Abstract: There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem 100 provided with a plurality of lead pins 121 through 124, a sub-mount 160 that is die-bonded onto the stem 100 and has its surface formed integrally with a monitoring PD 140 and two semiconductor laser elements 131 and 132 that are die-bonded onto the sub-mount 160 and have emission light monitored by the monitoring PD 140. A first bonding surface i.e. anode electrode 183 of the monitoring PD 140 and a second bonding surface i.e. end surface 123a of a lead pin 123 that is approximately perpendicular to the first bonding surface are wire-bonded to each other.

Abstract: A semiconductor laser device has an n-type AlGaAs first cladding layer 2, a multiple quantum well active layer 3, and a p-type AlGaAs second cladding layer 4 formed in this order and supported by an n-type GaAs substrate 1. The multiple quantum well active layer 3 has two quantum well layers 3a and barrier layers 3b provided on both sides of each quantum well layer 3a. The quantum well layers 3a are each made of In1−v1Gav1As1−w1Pw1, while the barrier layers 3b are each made of In1−v2Gav2As1−w2Pw2. Here, v1 and v2 satisfy v1<v2, while w1 and w2 satisfy w1<w2. The barrier layers have a tensile strain with respect to the GaAs substrate, while the well layers have a compressive strain with respect to the GaAs substrate.

Abstract: There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem 100 provided with a plurality of lead pins 121 through 124, a sub-mount 160 that is die-bonded onto the stem 100 and has its surface formed integrally with a monitoring PD 140 and two semiconductor laser elements 131 and 132 that are die-bonded onto the sub-mount 160 and have emission light monitored by the monitoring PD 140. A first bonding surface i.e. anode electrode 183 of the monitoring PD 140 and a second bonding surface i.e. end surface 123a of a lead pin 123 that is approximately perpendicular to the first bonding surface are wire-bonded to each other.