Abstract: A method for producing a semiconductor laser device having a buried heterostructure includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a p-substrate, said multi-layered crystal structure having a striped mesa-portion, a p-n-p multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each of both side faces of said active layer in said mesa-portion.

Abstract: A gate array integrated device including a plurality of single column type arrays, a plurality of matrix type arrays such as double column type arrays (BC2), and longitudinal connection areas (CH) provided between the single column type arrays and the matrix type arrays. One of the single column type arrays facing at least one side of each of the matrix type arrays.

Abstract: Novel alpha-aminoalkyl-alpha-alkylphenylacetonitrile derivatives useful for treatment of cartino vaso diseases, a peripheral circulatory insufficiency and cerebral circulation failure are disclosed.

Abstract: a-type or n-type thin film of silicon has the concentration of an impurity dopant element decreased adjacent to a boundary of film. The impurity dopant element in the portion of the silicon film from the surface to a predetermined depth is replaced by an element selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen.

Abstract: A method of producing thin films of silicon is characterized in that a p-type or n-type thin film of doped silicon having a dopant or impurity element is placed in a plasma atmosphere of elements selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen, whereby the concentration of an impurity element in the thin film is decreased adjacent to the surface of thin film and accordingly the impurity element is replaced by the plasma element adjacent to the surface of the thin film.

Abstract: A cap adapted for use as a container cover where the cap has a thermoplastic resin liner pressed formed onto the inner surface of a cap shell. The plastic liner is formed such that the difference between the intrasurface orientation index of the outer peripheral portion of the liner and the intrasurface orientation index of the central portion of the liner does not exceed 0.37 where the intrasurface orientation index is defined as the sum of the orientation coefficient of the liner in the radial direction and the orientation coefficient of the liner in the circular direction.A method of making a cap having a thermoplastic liner where the liner is press-formed into shape under conditions whereby the difference between the intrasurface orientation index of the outer peripheral portion of the liner and the orientation index of the central portion of the liner does not exceed 0.37.