Patents by Inventor Toshihiro Yamashita

Toshihiro Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210116729
    Abstract: It relates to: a display panel including a first substrate and a second substrate, a liquid crystal layer retained therebetween, a first alignment film provided on a surface of the first substrate facing toward the liquid crystal layer, and a second alignment film provided on a surface of the second substrate facing toward the liquid crystal layer; and a display apparatus that includes the display panel.
    Type: Application
    Filed: May 22, 2017
    Publication date: April 22, 2021
    Inventors: ATSUKO MAEDA, SHINTARO YAMADA, KATSUMI KONDO, HIDEKI NAKAGAWA, TOSHIHIRO YAMASHITA
  • Patent number: 10436202
    Abstract: A scroll compressor, includes: a pressure container; a frame including a hollow cylindrical portion and a bottom surface portion formed integrally with each other, the hollow cylindrical portion having an outer peripheral surface fixed to an inner peripheral surface of the pressure container; an orbiting scroll including a first base plate and a first spiral tooth formed on one surface of the first base plate, the orbiting scroll being rotatable in a hollow portion of the hollow cylindrical portion; a fixed scroll including a second base plate with a second spiral tooth, the second spiral tooth being meshed with the first spiral tooth; and a second suction pipe communicating with the hollow portion of the hollow cylindrical portion.
    Type: Grant
    Filed: November 18, 2014
    Date of Patent: October 8, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Toshihiro Yamashita
  • Patent number: 9726946
    Abstract: A liquid crystal display device includes an electrode configuration layer provided on a support substrate, the electrode configuration layer includes a stripe region having a plurality of electrode regions and a plurality of insulator regions arranged in an alternating manner, and the electrode regions and the insulator regions are formed by partially performing a reduction treatment or an oxidation treatment on a layer made of one material, thereby controlling conductivity. Further, the electrode regions are included in at least one of the pixel electrode and the counter electrode of the liquid crystal display device.
    Type: Grant
    Filed: May 25, 2015
    Date of Patent: August 8, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yusuke Yamagata, Manabu Iwakawa, Toshihiro Yamashita, Koji Oda, Kazunori Inoue
  • Publication number: 20170218957
    Abstract: A scroll compressor, includes: a pressure container; a frame including a hollow cylindrical portion and a bottom surface portion formed integrally with each other, the hollow cylindrical portion having an outer peripheral surface fixed to an inner peripheral surface of the pressure container; an orbiting scroll including a first base plate and a first spiral tooth formed on one surface of the first base plate, the orbiting scroll being rotatable in a hollow portion of the hollow cylindrical portion; a fixed scroll including a second base plate with a second spiral tooth, the second spiral tooth being meshed with the first spiral tooth; and a second suction pipe communicating with the hollow portion of the hollow cylindrical portion.
    Type: Application
    Filed: November 18, 2014
    Publication date: August 3, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventor: Toshihiro YAMASHITA
  • Publication number: 20170052402
    Abstract: A liquid crystal display device includes an electrode configuration layer provided on a support substrate, the electrode configuration layer includes a stripe region having a plurality of electrode regions and a plurality of insulator regions arranged in an alternating manner, and the electrode regions and the insulator regions are formed by partially performing a reduction treatment or an oxidation treatment on a layer made of one material, thereby controlling conductivity. Further, the electrode regions are included in at least one of the pixel electrode and the counter electrode of the liquid crystal display device.
    Type: Application
    Filed: May 25, 2015
    Publication date: February 23, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yusuke YAMAGATA, Manabu IWAKAWA, Toshihiro YAMASHITA, Koji ODA, Kazunori INOUE
  • Publication number: 20150305598
    Abstract: An endoscope including a first bending portion that actively performs a bending action in conjunction with a bending operation in an operation portion, a second bending portion that is provided on a proximal end side of the first bending portion, and passively performs a bending action by an external force, a flexible tube portion that is consecutively connected to a proximal end side of the second bending portion, wherein a series of helical tube portions (a first flex and a second flex) are disposed in the second bending portion and in the flexible tube portion, the helical tube portion being configured such that bending rigidity at a distal end side is higher than bending rigidity at a proximal end side, a boundary at which the bending rigidity of the helical tube portions change (a boundary between the first flex and the second flex) is set to a distal end side of the flexible tube portion, to thereby prevent buckling of the bending portion and realize good insertability of an insertion portion.
    Type: Application
    Filed: July 8, 2015
    Publication date: October 29, 2015
    Applicant: OLYMPUS CORPORATION
    Inventor: Toshihiro YAMASHITA
  • Publication number: 20090087708
    Abstract: A fuel cell system according to this invention comprises: a pressurizing valve (2a) provided on a cooling water circulation path; a reservoir tank (5) into which the cooling water flows through a pipe (4) when the pressurizing valve (2a) is open; an air supply pipe (13) that is connected to the reservoir tank (5) to supply air for diluting a fuel gas when the fuel gas accumulates in the reservoir tank (5); and a diluted gas exhaust pipe (15) for discharging the diluted fuel gas from the reservoir tank (5).
    Type: Application
    Filed: April 20, 2007
    Publication date: April 2, 2009
    Inventors: Toshihiro Yamashita, Takayuki Ishikawa, Michiko Morita, Kenichi Goto, Ikuhiro Taniguchi, Kenji Yonekura, Hayato Chikugo
  • Patent number: 7244293
    Abstract: A reservoir tank which includes: a container for storing fluid therein, having an inlet through which the fluid flows into the container and an outlet through which the fluid flows out of the container; and a duct provided inside the container, which is connected to the inlet of the container and has a first opening open inside the container. The first opening is located above the outlet of the container and below a surface of the fluid in the container.
    Type: Grant
    Filed: October 19, 2004
    Date of Patent: July 17, 2007
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Michiko Morita, Hitoshi Shimonosono, Shizuo Yamamoto, Katsuyuki Fujii, Tomoyuki Hanada, Toshihiro Yamashita, Kenichiro Minami
  • Patent number: 7137352
    Abstract: A plasma processing system comprises a processing chamber into and from which processing gas is inlet and outlet; a pair of electrodes disposed so as to mutually oppose within the processing chamber; a RF feeding apparatus for generating plasma between the pair of electrodes; a retaining/removal apparatus for retaining a substrate to be processed on and removal from a sample table while one of the pair of electrodes is taken as the sample table; and a detection apparatus for detecting the electrostatic-chucking state of the substrate and for detecting removal state of electrical charges from the substrate, on the basis of variations in impedance arising between the sample table and the substrate.
    Type: Grant
    Filed: July 10, 2001
    Date of Patent: November 21, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Toshihiro Yamashita, Hirotoshi Ise
  • Publication number: 20050081716
    Abstract: A reservoir tank which includes: a container for storing fluid therein, having an inlet through which the fluid flows into the container and an outlet through which the fluid flows out of the container; and a duct provided inside the container, which is connected to the inlet of the container and has a first opening open inside the container. The first opening is located above the outlet of the container and below a surface of the fluid in the container.
    Type: Application
    Filed: October 19, 2004
    Publication date: April 21, 2005
    Inventors: Michiko Morita, Hitoshi Shimonosono, Shizuo Yamamoto, Katsuyuki Fujii, Tomoyuki Hanada, Toshihiro Yamashita, Kenichiro Minami
  • Patent number: 6855621
    Abstract: The method of the present invention is a method of forming a silicon-based semiconductor layer by introducing a source gas into a vacuum vessel and forming a silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel by plasma CVD, which comprises a first step of forming a first region with a source gas containing halogen atoms, and a second step of forming a second region on the first region under a condition where the source gas containing halogen atoms in the second step is lower in gas concentration than that of the first step, thereby providing a method of forming a silicon-based semiconductor layer having an excellent photoelectric characteristic at a film forming rate of an industrially practical level and a photovoltaic element using the silicon-based semiconductor layer formed by the method.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: February 15, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takaharu Kondo, Masafumi Sano, Akira Sakai, Yasuyoshi Takai, Ryo Hayashi, Toshihiro Yamashita
  • Patent number: 6783640
    Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: August 31, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshihiro Yamashita, Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki
  • Patent number: 6740210
    Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: May 25, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Echizen, Toshihiro Yamashita
  • Patent number: 6716324
    Abstract: Provided is a method of forming a transparent, conductive film on a semiconductor layer formed on a substrate, by sputtering, wherein voltages are applied independently of each other to both a target and the substrate, respectively, and a bias voltage appearing in the substrate is controlled so as to form the transparent, conductive film on only a portion except for a defective region of the semiconductor layer, thereby restraining shunting of the transparent, conductive film and achieving excellent appearance thereof. Also provided are a defective region compensation method of a semiconductor layer, a photovoltaic element, and a method of producing the photovoltaic element.
    Type: Grant
    Filed: January 30, 2002
    Date of Patent: April 6, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshihiro Yamashita, Yasuyoshi Takai, Hiroshi Izawa
  • Patent number: 6677171
    Abstract: A collective substrate of active-matrix substrates is divided into a first block and a second block. In cells of the first block and the second block, from a corresponding signal input pad group, an inspection scanning signal is inputted via a scanning-line short ring connecting line to scanning lines, an inspection display signal is inputted via a signal-line short ring connecting line to signal lines, and an auxiliary capacity wire signal is inputted via an auxiliary capacity wire main wire connecting line to auxiliary capacity wires. This arrangement makes it possible to perform an electrical inspection with high accuracy and efficiency on a large-format active-matrix substrate, and to manufacture an inspection probe frame in a simple manner at low cost.
    Type: Grant
    Filed: November 14, 2000
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hisashi Nagata, Mikio Katayama, Toshihiro Yamashita, Manabu Takahama
  • Patent number: 6648128
    Abstract: A conveyor is provided that is capable of preventing degradation in quality of an article being conveyed. The conveyor includes a conveyor belt; and a rolling element rotatably provided at a surface of the conveyor belt. A plurality of rolling elements are provided along a conveying direction. The conveyor further includes a holder provided at the surface of the conveyor belt, for rotatably holding the corresponding rolling element. The rolling element has a ball shape.
    Type: Grant
    Filed: April 29, 2002
    Date of Patent: November 18, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Toshihiro Yamashita, Toshio Komemura, Toshihiko Noguchi
  • Publication number: 20030153165
    Abstract: The method of the present invention is a method of forming a silicon-based semiconductor layer by introducing a source gas into a vacuum vessel and forming a silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel by plasma CVD, which comprises a first step of forming a first region with a source gas containing halogen atoms, and a second step of forming a second region on the first region under a condition where the source gas containing halogen atoms in the second step is lower in gas concentration than that of the first step, thereby providing a method of forming a silicon-based semiconductor layer having an excellent photoelectric characteristic at a film forming rate of an industrially practical level and a photovoltaic element using the silicon-based semiconductor layer formed by the method.
    Type: Application
    Filed: October 24, 2001
    Publication date: August 14, 2003
    Inventors: Takaharu Kondo, Masafumi Sano, Akira Sakai, Yasuyoshi Takai, Ryo Hayashi, Toshihiro Yamashita
  • Publication number: 20030042115
    Abstract: A conveyor is provided that is capable of preventing degradation in quality of an article being conveyed. The conveyor includes a conveyor belt; and a rolling element rotatably provided at a surface of the conveyor belt. A plurality of rolling elements are provided along a conveying direction. The conveyor further includes a holder provided at the surface of the conveyor belt, for rotatably holding the corresponding rolling element. The rolling element has a ball shape.
    Type: Application
    Filed: April 29, 2002
    Publication date: March 6, 2003
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Toshihiro Yamashita, Toshio Komemura, Toshihiko Noguchi
  • Publication number: 20020144726
    Abstract: Provided is a method of forming a transparent, conductive film on a semiconductor layer formed on a substrate, by sputtering, wherein voltages are applied independently of each other to both a target and the substrate, respectively, and a bias voltage appearing in the substrate is controlled so as to form the transparent, conductive film on only a portion except for a defective region of the semiconductor layer, thereby restraining shunting of the transparent, conductive film and achieving excellent appearance thereof. Also provided are a defective region compensation method of a semiconductor layer, a photovoltaic element, and a method of producing the photovoltaic element.
    Type: Application
    Filed: January 30, 2002
    Publication date: October 10, 2002
    Inventors: Toshihiro Yamashita, Yasuyoshi Takai, Hiroshi Izawa
  • Publication number: 20020134670
    Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.
    Type: Application
    Filed: January 18, 2002
    Publication date: September 26, 2002
    Inventors: Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki, Toshihiro Yamashita