Abstract: The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

Abstract: A microwave plasma processing apparatus which easily ensures uniformity and stability of plasma in response to changes of process conditions and the like. The microwave plasma processing apparatus 100 generates plasma of a process gas in a chamber by microwave and performs plasma processing to a work to be processed by using the plasma. On a plate 27 composed of a conductor covering the outer circumference of a micro wave transmitting board 28, two or more holes 42 for propagating microwave from an edge part of the microwave transmitting board 28 to an inner part of the holes 42 are formed. Volume adjusting mechanisms 43 and 45 adjust the volume of the holes to adjust impedance of each unit when the microwave transmitting board 28 is divided by unit to which each of the holes 42 belongs, and electric field distribution of the microwave transmitting board 28 is controlled.

Abstract: A first flow passage (16), which cools a temperature controlled object by a circulating first cooling water (15), and a second flow passage (19) separate from the first flow passage are provided so as to exchange heat between a second cooling water (18) flowing through the second flow passage (19) and the first cooling water (15). There is no need to store the first cooling water (15) in a tank of a constant capacity, and the first cooling water (15) flowing through the first flow passage (16) of a chiller corresponding part is absorbed substantially in its entirety by the second cooling water (18). A response becomes quick with respect to a load fluctuation of the temperature controlled object, and waste of energy can be reduced while improving accuracy of temperature control.

Abstract: To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

Abstract: A vacuum processing apparatus using a shield member that is used in a processing chamber of the vacuum processing apparatus, that has a heating unit and that has a simple structure enabling the shield member to be thinned. A vacuum processing apparatus having a processing chamber, a gas exhaust unit for discharging gas in processing space inside the processing chamber, a support base for holding a substrate to be processed, and a shield member placed inside the processing chamber. The shield member has an outer wall structure exposed to the processing space that is located inside the processing chamber and is reduced in pressure, inner space formed inside the outer wall structure and isolated from the processing space, and a heating unit placed in the inner space and heating the outer wall structure. The inner space is communicated with the outside of the vacuum processing chamber, and the heating unit is constructed so as to extend into the inner space in a sheet-like form.

Abstract: The present invention has the object of improving the efficiency of cleaning in a substrate processing apparatus. Thus, the present invention uses a substrate processing apparatus, comprising: a processing vessel holding therein a substrate to be processed; gas supply means for supplying a gas for processing into said processing vessel; a stage provided in the processing vessel for holding said substrate to be processed; a shielding plate dividing a space inside said processing vessel into a first space and a second space, wherein there are provided: a first evacuation path for evacuating said first space; and a second evacuation path for evacuating said second space.

Abstract: A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

Abstract: In a substrate processing apparatus for processing a substrate for manufacturing a semiconductor device, a mist passage (5) is formed to pass through a part of a processing vessel (2) as an object to be cooled. There are disposed a mist generator (64) that generates a mist, and a gas supply source (62) that supplies a carrier gas for carrying the generated mist. A temperature of the part to be cooled is detected by a temperature sensor (49). When the detected temperature exceeds a predetermined temperature, a water mist, for example, is allowed to flow into the mist passage so as to cool the processing vessel by a heat of evaporation of the mist. Thus, the temperature of the processing vessel can be promptly lowered, and thus a plasma process can be performed under an atmosphere of a stable temperature.

Abstract: The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part.

Abstract: Resonance can be surely provided under any plasma condition in such a manner that an antenna (3) is arranged in an opening of an upper part of a chamber (1) to produce an electromagnetic field generated by a microwave, a top plate (4) for sealing the opening of the chamber (1) is provided under the antenna (3), a ring-shaped ridge (41) is provided on a lower surface of the top plate (4) such that a thickness thereof in a diameter direction is tapered so as to be varied sequentially. Thus, only one kind of top plate has the same effect as a top plate having various thicknesses, so that absorption efficiency to the plasma can be considerably improved and the plasma can be generated stably over a range from a high pressure to a low pressure.

Abstract: A substrate processing apparatus includes a plurality of process chambers (20) for applying a process to substrate accommodated therein and a conveyance case (24) that conveys the accommodated substrates to the process chambers (20) and a transfer mechanism that moves the conveyance case (24) along a moving path. The conveyance case accommodates the substrates in an isolated state from an external atmosphere. The plurality of process chambers (20) are arranged in an aligned state on both sides of a moving path of the conveyance case (24). The conveyance case (24) has two conveyance ports (24a) in response to conveyance ports (20a) of the process chambers (20) arranged in alignment in two rows.

Abstract: A deposition apparatus (10) comprises a plasma generation chamber (14) to which a pressure is applied with a treatment gas to generate plasma, a deposition chamber (20) in which a substrate is placed and a film is formed on the substrate, and a distribution plate (17) having a plurality of holes and provided between the plasma generation chamber (14) and the deposition chamber (20). A diameter of the hole in the distribution plate (17) has a size such that a pressure of the plasma generation chamber (14) is 2.0 times or more as high as that of the deposition chamber (20). The deposition apparatus (10) further comprises means for applying a predetermined bias voltage between the plasma generation chamber (14) and the deposition chamber (20).

Abstract: A substrate to be processes is accommodated in a process container. A vapor deposition source retains a vapor deposition material to be deposited on the substrate to be processed. A measuring device measures a film thickness of a vapor deposition film produced in said process container. The measuring device measures the film thickness by irradiating a light onto the vapor deposition film.

Abstract: A substrate holding apparatus includes a stage configured to support a substrate to be processed, the stage including a surface, and a continuous convex portion surrounding a predetermined region of the surface which convex portion includes a periphery surface and an upper surface that is positioned higher than the surface of the stage; an electrostatic attraction sheet configured to attract a substrate with electrostatic force, the electrostatic attraction sheet being arranged on the surface of the stage within the region surrounded by the convex portion; a first protection member configured to protect the electrostatic attraction sheet, the first protection member being arranged on the electrostatic attraction sheet and including a side surface and a portion that is arranged to face opposite the upper surface of the convex portion; an adhesive layer that is arranged at least between the electrostatic attraction sheet and the first protection member and is configured to bond the electrostatic attraction shee

Abstract: To enable suitable plasma processing with reduced damage to a processing target ascribable to plasma generation. In a plasma processing apparatus including at least: a plasma processing chamber in which plasma processing is applied to a processing target; a processing target supporting means for setting the processing target in the plasma processing chamber; and a plasma generating means for generating a plasma in the plasma processing chamber, the present invention uses the plasma generating means that is capable of supplying intermittent energy.

Abstract: A plasma processing apparatus comprising at least a plasma processing chamber for plasma-processing an object; object-holding means for disposing the object in the plasma processing chamber; and plasma-generating means for generating a plasma in the plasma processing chamber. The inner wall of the plasma processing chamber is at least partially covered with an oxide film based on a pre-treating plasma. A plasma processing apparatus and a plasma processing method effectively prevent the spluttering and the etching of the inner wall of the plasma processing chamber while suppressing contamination to the object.

Abstract: A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

Abstract: A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

Abstract: A plasma processing device comprising a chamber (1), a high-frequency power supply and an antenna unit (3). The antenna unit (3) comprises a slot plate (3c) , a slow wave plate (3b) and an antenna cover (3a) . A top plate unit (4) having a flat plate (4a) and sidewalls (4b) is disposed at the upper portion of the chamber (1). The flat plate (4a) contacts the slot plate (3c) disposed to face a housed substrate (11). The sidewalls (4b) are formed so as to extend toward a substrate-disposed side from the periphery of the flat plate (4a) . The outer periphery surfaces of sidewalls (4b) contact the chamber (1). The thickness of the sidewalls (4b) is set to be at least ?g/4, where ?g is the wavelength of a microwave based on the permittivity of the top plate (4). Accordingly, a plasma density can be further increased and a uniformity in plasma density distribution can be improved.

Abstract: A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as a wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector.