Abstract: An apparatus of manufacturing a light emitting element having a plurality of layers including an organic layer on a substrate to be processed is disclosed. The apparatus includes a plurality of process chambers to which the substrate to be processed is transferred in series, wherein the plurality of process chambers are substantially linearly connected to one another and wherein adjacent two of the process chambers are filled with gas that does not react with a layer on the substrate to be processed when the substrate to be processed is transferred between the two process chambers.

Abstract: Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.

Abstract: A plasma processing system includes: a plasma processing apparatus which processes a substrate in a processing container by turning a processing gas supplied inside the processing container into plasma; and a carrier arm which carries the substrate in and out of the processing container, wherein a loading table is mounted inside the processing container and the substrate is loaded on the top surface of the loading table, and one or more recessed portions are formed on regions of the top surface of the loading table, wherein the regions corresponds to locations on the carrier arm for supporting the substrate. The coating layer is not transferred from the top surface of the loading table to the back of the substrate in the regions corresponding to the locations on the carrier arm for supporting the substrate. Accordingly, the coating layer is not transferred to the top surface of the carrier arm.

Abstract: Provided are a temperature control device capable of performing a temperature control of, e.g., a chamber wall of a processing apparatus with a high precision; and a processing apparatus using the same. The temperature control device 50 includes a plurality of heater units 51 for heating each of a multiplicity of zones 55 into which a wall portion of a housing 2 of a chamber 1 is divided; a multiplicity of heater power supplies 52 for supplying power to each of the plurality of heater units 51; a number of thermocouples 53 for measuring the temperature of each of the multiplicity of zones 55; and a plurality of controllers 54 for controlling a corresponding power supply unit by an ILQ control based on a signal from each temperature sensor to set a temperature of a corresponding zone to a preset target temperature.

Abstract: A substrate processing apparatus 1 has: sensors 21 and 22 provided in an etching chamber 14 and configured to detect a relative position between the etching chamber 14 and a wafer transfer mechanism 23; a control section 38 configured to correct positional displacement; a motor controller 39; a motor 28; and a motor 30. Since the positional displacement of a wafer W can be corrected, the wafer transfer mechanism 23 is capable of carrying the wafer W into the etching chamber 14 without causing any positional displacement, so that the wafer W can be placed on a susceptor 19 at a proper position.

Abstract: Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.

Abstract: Disclosed is an etching method for etching a target layer formed on a surface of a target object, including: a resist forming step for forming a resist layer uniformly on the surface of the target object; a mask forming step for forming a patterned etching mask by forming an etching recess on the resist layer; a plasma resistant film forming step for forming a plasma resistant film on the entire surface of the etching mask including a bottom and a sidewall of the etching recess; a bottom plasma resistant film removing step for removing the plasma resistant film formed on the bottom of the etching recess; and a main etching step for etching the target layer by using the etching mask as a mask, after the bottom plasma resistant film removing step.

Abstract: A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.

Abstract: Provided is a plasma processing apparatus capable of preventing an unnecessary adhesion film from being deposited in a processing chamber using plasma. The plasma processing apparatus 32 includes a processing chamber 34 having an opened ceiling portion 54a and capable of being evacuated to a vacuum therein; a ceiling plate 54 airtightly installed at the ceiling portion 54a and made of a microwave-transmissive dielectric material; a planar antenna member 58 installed on the ceiling plate 54, for introducing a microwave into the processing chamber; and a gas introduction mechanism 44. A film deposition preventing member 78 made of a dielectric material and elongated from the ceiling plate 54 is installed to correspond to a portion where an unnecessary adhesion film is likely to be deposited within the processing chamber 34. The film deposition preventing member 78 is configured as a rod-shaped member 104.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a·2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

Abstract: A film forming apparatus is provided with a processing chamber having a substrate holding table for holding a substrate to be processed inside the container; a gas material generation unit arranged outside the processing chamber, for generating a gas material by evaporating or sublimating a film forming source material including a metal; a gas material supply unit for supplying the processing chamber with the gas material; and a transport path for transporting the gas material to the gas material supply unit from the gas material generation unit. The film forming apparatus is characterized in that a metal-containing layer is formed on an organic layer including a light emitting layer on the target substrate.

Abstract: In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

Abstract: Disclosed is a film forming method of an amorphous carbon film, including: disposing a substrate in a processing chamber; supplying a processing gas containing carbon, hydrogen and oxygen into the processing chamber; and decomposing the processing gas by heating the substrate in the processing chamber and depositing the amorphous carbon film on the substrate.

Abstract: A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as a wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector.

Abstract: A substrate processing system comprises a plurality of CVD processing units (15a-15c) and one refrigerator (101). A supply line (102) for supplying a cooling medium from the refrigerator to the CVD processing units, and a feedback line (103) for feeding the cooling medium back to the refrigerator from the processing units are laid in the system. The cooling medium from the refrigerator is thus distributively fed to the processing units. Circuits (104a-104c) are laid out in rod stages (33), objects of temperature control, in the respective processing units. Each circuit is connected to the supply line and to the feedback line. The cooling medium is circulated around the circuits to control the temperatures of the rod stages stably. When the temperature of the rod stage rises, the cooling medium at a low temperature is taken in the circuit from the supply line to cool the rod stage.

Abstract: A plasma processing apparatus includes a vacuum processing container, and a placing table for placing an object which is arranged in the container and is to be processed. The processing container includes a tubular container body having an upper opening, and a dielectric top plate attached hermetically to the upper opening of the body and transmitting an electromagnetic wave. The plasma processing apparatus further includes an electromagnetic wave supplying system for supplying an electromagnetic wave for generating plasma into the container through the top plate, and a gas supplying system for supplying a gas containing a processing gas into the container. A gas ejecting hole for ejecting the gas supplied from the gas supplying system into the container is formed on the top plate. A discharge prevention member having a permeability is arranged in each ejection hole.

Abstract: A disclosed on-off valve includes a valve body having two openings that may place a process chamber and an evacuation apparatus in pressure communication with each other; a closure element located inside the valve body and adapted to close one of the two openings; a seal member provided in the closure element and adapted to seal the one of the two openings when the closure element closes the one of the two openings; a linear motion driver that linearly moves the closure element; a retreat portion located away from the two openings; and a pivotal motion driver adapted to pivot the closure element between a first position corresponding to the one of the two openings and a second position corresponding to the retreat portion; wherein the closure element is moved to the retreat portion by the linear motion driver and the pivotal motion driver in order to stay at the retreat portion when the closure element is away from the one of the two openings.

Abstract: The present invention is a microwave plasma processing apparatus comprising: a chamber in which an object to be processed is housed; a process gas supply unit that supplies a process gas into the chamber; a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber; a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber; a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber; a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wa

Abstract: A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.