Abstract: The sensing apparatus includes a measuring light emission device, a waveguide member including a sensing surface modified by a surface modification substance, a detection device and an analyzer. The measuring light of a predetermined polarized state is emitted from the emission device so that the measuring light is totally reflected on the sensing surface of the waveguide member holding target substances labeled by fine metal particles to illuminate the particles by evanescent light generated near the sensing surface. The amount of evanescent light scattered by the fine metal particles is detected by the detection device. The measuring light emission device, the waveguide member and the analyzer are included in an optical waveguide system which sets a polarized state of scattered light generated when no target substance is present on the sensing surface in a crossed nicol relation to the analyzer.

Abstract: A molecular analysis light detection apparatus is formed by: a sample plate provided with an enhancing member which is disposed at a small predetermined area of a sample contact surface contacting with a sample containing a substance to be analyzed and which generates an enhancing field for enhancing light generated from the substance to be analyzed at the predetermined area relative to the light at other areas of the sample contact surface when predetermined excitation light is applied; an excitation-light applying optical system for applying the excitation light to an illumination area which contains the predetermined area of the sample contact surface provided with the enhancing member and which is larger than the predetermined area; and a signal detector unit for detecting fluctuation of the light, which is enhanced by the enhancing field, generated from the substance to be analyzed.

Abstract: Exciting light is irradiated through a dielectric material block toward an interface between the dielectric material block and a metal film formed on one surface of the dielectric material block, such that total reflection conditions may be satisfied. An intensity of analysis fluorescence produced by an analysis fluorescent substance, which is contained in a sample and produces the analysis fluorescence by being excited by an evanescent wave oozing out from the interface when the exciting light impinges upon the interface, is normalized in accordance with an intensity of reference fluorescence produced by a reference fluorescent substance, which has been located at a position for excitation by the exciting light.

Abstract: A sensor unit includes a dielectric block, a thin film layer and a reference surface. The thin film layer is formed on the upper surface of the dielectric block and the reference surface is coplanar with the upper surface of the dielectric block. The sensor unit is held in a predetermined position. A light beam is caused to enter the dielectric block to impinge upon the interface between the upper surface of the dielectric block and the thin film layer so that total internal reflection conditions are satisfied at the interface. Information on an analyte on the thin film layer is obtained on the basis of the light beam reflected at the interface. Displacement of the interface is measured by measuring displacement of the reference surface and the position of the sensor unit is adjusted according to the displacement of the reference surface.

Abstract: After a sensor section has been dipped in a liquid sample, the sensor section is moved into a predetermined atmosphere, which is substantially free from occurrence of absorption or scattering of exciting light and fluorescence. In the state, in which the sensor section has been located in the predetermined atmosphere, exciting light is produced by a light source and is propagated through the interior of the sensor section. The exciting light is radiated out from an outside surface of the sensor section in order to excite a fluorescent substance for indicating the presence of a substance to be analyzed in the liquid sample. Fluorescence, which is produced by the fluorescent substance when the fluorescent substance is excited by the exciting light, is detected by a photodetector.

Abstract: An image of a light beam, which has been totally reflected from an interface between a dielectric material block and a thin film layer of an analysis chip for supporting a sample, is detected with photodetector and as a two-dimensional image constituted of pixels arrayed in a beam width direction and an incidence angle direction, which are perpendicular to each other. An abnormal pixel row, which contains a pixel represented by abnormal pixel data, is extracted from among pixel rows, each of which extends in the incidence angle direction, in the array of the pixels constituting the two-dimensional image and in accordance with an output of the photodetector. A position of a dark line in the light beam, which has been totally reflected from the interface, is detected from the pixel data corresponding to the pixel rows other than the abnormal pixel row.

Abstract: A measurement path is filled with air prior to performing actual measurement. A p-polarized light beam is caused to enter an interface, and the intensity distribution of the light beam reflected at the interface is detected by a photodiode array to obtain a reference intensity distribution of the light beam itself. Thereafter, the measurement path is filled with a target for measurement, and the intensity distribution of a light beam reflected at the interface is measured. Each of the measured distribution values are divided by the reference intensity distribution, to cancel out influences due to fluctuations in the intensity distribution of the light beam. Thereby, the position of an attenuated total reflection angle is detected with high accuracy. Because a light beam constituted by p-polarized light waves is utilized, separating means for separating the light beam reflected at the interface into p-polarized and s-polarized light waves becomes unnecessary.

Abstract: Provided are a detection apparatus, a detection method and an optically transparent member, which can detect a decrease in a precision. A convolution is performed by a convolution portion 80 contained in an image processing portion 38, to acquire the distribution information indicating the light intensity distribution of a light beam, which is totally reflected at the interface and which is incident at a plurality of angles to an dielectric block 52 so as to be totally reflected at the interface of the dielectric block 52. A spatial frequency resolution is performed on the light intensity distribution indicated by the distribution information acquired, by a detection precision evaluating portion 86 contained in the image processing portion 38, to thereby derive the light intensity distribution of each spatial frequency of the light beam. The precision is detected by comparing the light intensity distribution derived, with a threshold value predetermined for each spatial frequency.

Abstract: A measuring signal in the detecting area is calibrated on the basis of a measuring signal in the reference area by the reference method. The rate of change with time of the difference between the measuring signal and an estimated result of the measurement (ORU constant) is calculated in the period where it is expected that the signal shows a fixed value and the components which change at a rate of change calculated for the entire period of the measuring period with the instance when a buffer containing thereon an analyte is supplied taken as a reference are taken as the drift components and correction to remove the drift components from the measuring signal is carried out.

Abstract: Reference data are subtracted from corresponding actual measurement data, and unprocessed binding quantity data, each of which represents a quantity of binding of a ligand and each of analytes, are thereby acquired. Calculation is made to find a relationship between the reference data and the unprocessed binding quantity data acquired in cases where the binding does not occur. In accordance with the relationship, variation components, which are contained in the unprocessed binding quantity data, are calculated. The variation components are subtracted from the corresponding unprocessed binding quantity data, and processed binding quantity data are thereby acquired. The processed binding quantity data are utilized for extracting an analyte capable of binding with the ligand.

Abstract: A measuring apparatus includes a sensor well unit having a plurality of sample wells, which are formed in a dielectric block and a thin film layer provided on the inner bottom surface of each sample well. A light beam projector causes a plurality of light beams to impinge upon the interfaces of the inner bottom surfaces of one-dimensionally arranged sample wells out of the plurality of sample wells and the thin film layers at various angles of incidence so that total internal reflection conditions are satisfied at each of the interfaces, and the light beams reflected at the respective interfaces are received by a photodetector. A longitudinal tilt measuring system measures a longitudinal tilt of the interface from a predetermined reference position, and a corrected measured value corrected according to the longitudinal tilt measured by the longitudinal tilt measuring system is obtained.

Abstract: In a measuring method utilizing the phenomenon of attenuation in total internal reflection in which a light beam is caused to enter a dielectric block provided with a film layer to be brought into contact with a sample so that total internal reflection conditions are satisfied at the interface of the dielectric block and the film layer and various angles of incidence of the light beam to the interface of the dielectric block and the film layer can be obtained, and the intensity of the light beam reflected in total internal reflection at the interface is detected, the light beam is caused to intermittently impinge upon the dielectric block.

Abstract: A state of attenuation in total internal reflection is detected by the use of a measuring apparatus having a measuring unit and a reference unit and a measuring system which corrects result of detection by the measuring unit on the basis of result of detection by the reference unit and measures the change of a state of attenuation in total internal reflection on the basis of the corrected result of detection by the measuring unit. The difference in sensitivity between the measuring unit and the reference unit is detected before initiating the measurement of the change of a state of attenuation in total internal reflection, and result of measurement by the measuring system is calibrated on the basis of the difference in sensitivity between the measuring unit and the reference unit.

Abstract: Disclosed herein is a measuring apparatus equipped with a plurality of measuring units. Each measuring unit includes a dielectric block, a thin film layer formed on the dielectric block, and a sample holding mechanism for holding a sample on the thin film layer. The measuring apparatus is further equipped with an optical system for making a light beam enter the dielectric block at an angle of incidence so that a total internal reflection condition is satisfied at an interface between the dielectric block and the thin film layer, and photodetectors for measuring the intensity of the light beam totally reflected at the interface. The optical system is constructed so that light beams simultaneously enter the dielectric blocks of the measuring units. The number of photodetectors corresponds to the number of the light beams.

Abstract: Disclosed herein is a measuring apparatus equipped with a plurality of measuring units. Each measuring unit includes a dielectric block, a thin film layer formed on the dielectric block, and a sample holding mechanism for holding a sample on the thin film layer. The measuring apparatus is further equipped with an optical system for making a light beam enter the dielectric block at an angle of incidence so that a total internal reflection condition is satisfied at an interface between the dielectric block and the thin film layer, and photodetectors for measuring the intensity of the light beam totally reflected at the interface. The optical system is constructed so that light beams simultaneously enter the dielectric blocks of the measuring units. The number of photodetectors corresponds to the number of the light beams.

Abstract: Evaluation of an amount of immobilized sample in a surface plasmon resonance (SPR) immunoassay is provided. To immobilize the sample, a sensor unit has a sensing surface. The sensor unit includes a transparent dielectric medium, and a metal film having the sensing surface. The metal film is connected with the dielectric medium for constituting a metal/dielectric interface. The sensing surface is adapted to sensing reaction of the sample. Then illuminating light reflected by the metal/dielectric interface is received with a photo detector such as a CCD upon applying the illuminating light to the metal/dielectric interface, to detect attenuation of the illuminating light and output a detection signal thereof. The evaluated amount of the sample immobilized on the sensing surface is evaluated according to the detection signal. Before immobilization, the sensor unit is tested for the photo detector to output an initial detection signal, which is considered for the evaluation.

Abstract: A measuring signal in the detecting area is calibrated on the basis of a measuring signal in the reference area by the reference method. The rate of change with time of the difference between the measuring signal and an estimated result of the measurement (ORU constant) is calculated in the period where it is expected that the signal shows a fixed value and the components which change at a rate of change calculated for the entire period of the measuring period with the instance when a buffer containing thereon an analyte is supplied taken as a reference are taken as the drift components and correction to remove the drift components from the measuring signal is carried out.

Abstract: A measurement path is filled with air prior to performing actual measurement. A p-polarized light beam is caused to enter an interface, and the intensity distribution of the light beam reflected at the interface is detected by a photodiode array to obtain a reference intensity distribution of the light beam itself. Thereafter, the measurement path is filled with a target for measurement, and the intensity distribution of a light beam reflected at the interface is measured. Each of the measured distribution values are divided by the reference intensity distribution, to cancel out influences due to fluctuations in the intensity distribution of the light beam. Thereby, the position of an attenuated total reflection angle is detected with high accuracy. Because a light beam constituted by p-polarized light waves is utilized, separating means for separating the light beam reflected at the interface into p-polarized and s-polarized light waves becomes unnecessary.

Abstract: Disclosed herein is a measuring apparatus equipped with a plurality of measuring units. Each measuring unit includes a dielectric block, a thin film layer formed on the dielectric block, and a sample holding mechanism for holding a sample on the thin film layer. The measuring apparatus is further equipped with an optical system for making a light beam enter the dielectric block at an angle of incidence so that a total internal reflection condition is satisfied at an interface between the dielectric block and the thin film layer, and photodetectors for measuring the intensity of the light beam totally reflected at the interface. The optical system is constructed so that light beams simultaneously enter the dielectric blocks of the measuring units. The number of photodetectors corresponds to the number of the light beams.

Abstract: A light beam irradiating optical system is associated with a dielectric material member having a surface, on which a thin film layer has been formed, a sample being brought into contact with a surface of the thin film layer. The light beam irradiating optical system produces and irradiates a light beam to an interface between the dielectric material member and the thin film layer. The light beam is constituted of light beam components, which have various different incidence angles with respect to the interface, and which have intensities varying in accordance with the incidence angles. A single measuring detector for outputting a signal representing an intensity of an entire area of received light is secured and located so as to receive the light beam having been reflected from the interface.