Patents by Inventor Toshikazu Kondo

Toshikazu Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200353383
    Abstract: A filtration device that includes: a filtration filter having a first main surface that captures a filtration target object contained in a liquid and a second main surface that faces the first main surface; and a housing that holds the filtration filter, and defines a liquid inflow path that faces the first main surface and a liquid discharge path that faces the second main surface, the housing including a tubular portion that extends in a direction away from the second main surface of the filtration filter and defines the liquid discharge path, and a flange portion that extends from an outer peripheral surface of the tubular portion, and the flange portion includes a vent hole extending away from the outer peripheral surface of the tubular portion.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 12, 2020
    Inventors: Toshikazu Kawaguchi, Takashi Kondo
  • Publication number: 20200346144
    Abstract: A filtration filter that includes a filter section having a plurality of through-holes passing through a first main surface and constructed such that objects to be filtered contained in a liquid are captured and a second main surface opposite the first main surface; and a frame section surrounding an outer periphery of the filter section, wherein a first film thickness at a center of the filter section is larger than a second film thickness of the filter section at a position closer to the frame section than the center of the filter section.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Shusuke Yokota, Masaru Banju, Toshikazu Kawaguchi, Takashi Kondo
  • Publication number: 20200279875
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: March 5, 2020
    Publication date: September 3, 2020
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • Publication number: 20200155990
    Abstract: A filtration device includes a first channel member, a second channel member, and a filter. The first channel member has a recess recessed inward from an outer wall surface. A groove is formed is the recess and has an opening in a recessed surface of the recess. First and second channels, each defined by a through-hole, are formed in the first channel member and are connected to the groove. A first connection part connects the groove with the first channel. The second channel member has a projection that detachably mates with the recess. The second channel member includes a discharge channel that has an opening in a projecting surface of the projection, the opening being located over the groove. The filter is disposed along the groove, and positioned at the opening of the discharge channel. When the first and second channel members are placed in a operative relationship, a third channel is formed by the projecting surface of the projection and the opening of the groove.
    Type: Application
    Filed: January 24, 2020
    Publication date: May 21, 2020
    Inventors: Toshikazu Kawaguchi, Masaru Banju, Takashi Kondo
  • Publication number: 20200155981
    Abstract: A filtration device includes a container, a channel member, and a filter. The container has a space of variable volume that contains a liquid, the liquid including a target substance to be separated by filtration. The channel member includes a channel and an opening that are defined therein, the opening being provided at a position along the channel in a direction transverse to the direction in which the channel extends. The channel member has an attachment part to which the container is attached and which provides communication between the space in the container and the channel. The filter is attached inside the channel member and positioned at the opening.
    Type: Application
    Filed: January 27, 2020
    Publication date: May 21, 2020
    Inventors: Toshikazu Kawaguchi, Masaru Banju, Takashi Kondo
  • Publication number: 20200129925
    Abstract: A concentration apparatus that includes a liquid tank storing a liquid containing a filtration object, a tubular member having first and second end portions disposed in the liquid tank and forming a first circulation flow path therebetween, a circulation pump for supplying the liquid stored in the liquid tank to flow from the first end portion to the second end portion, a filtration filter disposed in a sidewall of the tubular member, a bypass pipe having first and second ends thereof connected to sidewalls of the tubular member so as to form a second circulation flow path between the first and second end portions of the tubular member, a switching valve constructed to cause the liquid to flow in one of the first or second circulation flow paths, and a control unit controlling driving of the circulation pump and a switching operation of the switching valve.
    Type: Application
    Filed: December 24, 2019
    Publication date: April 30, 2020
    Inventors: Toshikazu Kawaguchi, Junko Watanabe, Takashi Kondo
  • Publication number: 20200081283
    Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
    Type: Application
    Filed: November 12, 2019
    Publication date: March 12, 2020
    Inventors: Toshikazu KONDO, Jun KOYAMA, Shunpei YAMAZAKI
  • Patent number: 10586811
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: March 10, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Hideyuki Kishida
  • Patent number: 10539845
    Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: January 21, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Jun Koyama, Shunpei Yamazaki
  • Publication number: 20190109158
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: October 4, 2018
    Publication date: April 11, 2019
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • Patent number: 10131772
    Abstract: Provided are a rubber composition for a base tread capable of improving fuel efficiency, handling stability, and durability (flex crack growth resistance) in a balanced manner, and a pneumatic tire formed from the rubber composition. The present invention relates to a rubber composition for a base tread, including: a rubber component and a reinforcing agent, the rubber component including natural rubber, a butadiene rubber (1) containing 1,2-syndiotactic polybutadiene crystals, a butadiene rubber (2) synthesized in the presence of a rare earth catalyst, and a modified butadiene rubber (3) having a cis content of not more than 50% by mass.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: November 20, 2018
    Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Toshikazu Kondo
  • Patent number: 10096623
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: October 9, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Hideyuki Kishida
  • Publication number: 20180190680
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: December 28, 2017
    Publication date: July 5, 2018
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • Patent number: 9884516
    Abstract: Provided is a pneumatic tire capable of improving fuel efficiency, handling stability, and durability in a balanced manner. The present invention relates to a pneumatic tire, comprising a tread that includes a cap layer and a base layer, the cap layer and the base layer satisfying relationships represented by the following formulas (1) to (3): 50/50?Vc/Vb?90/10??(1) wherein Vc is the volume of the cap layer and Vb is the volume of the base layer, 0.65?E*c/E*b<1.00??(2), and 1.30?(tan ?c/E*c)/(tan ?b/E*b)<2.40??(3) wherein E*c and tan ?c are the complex modulus and the loss tangent, respectively, of the cap layer at 30° C., and E*b and tan ?b are the complex modulus and the loss tangent, respectively, of the base layer at 30° C.
    Type: Grant
    Filed: April 10, 2012
    Date of Patent: February 6, 2018
    Assignees: SUMITOMO RUBBER INDUSTRIES, LTD., HONDA MOTOR CO., LTD.
    Inventors: Toshikazu Kondo, Takuya Horiguchi, Emiko Mogi
  • Patent number: 9859306
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Grant
    Filed: August 16, 2016
    Date of Patent: January 2, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Hideyuki Kishida
  • Publication number: 20170218170
    Abstract: A rubber composition comprising silica that has a BET specific surface area of not more than 130 m2/g and hardness of granulated particles as measured based on JIS K6221-1982 6.3.3 of not less than 23.5 cN can provide a rubber composition which is excellent in rubber physical properties while maintaining energy efficiency. A tire comprising a component consisted of the rubber composition can be also provided.
    Type: Application
    Filed: July 29, 2015
    Publication date: August 3, 2017
    Applicant: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventors: Seiji HATANO, Yuka YOKOYAMA, Kouhei TANAKA, Akira MINAGOSHI, Kazuo HOCHI, Masanobu NAKAMURA, Toshikazu KONDO, Kenichiro OGATA
  • Publication number: 20170192272
    Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
    Type: Application
    Filed: March 21, 2017
    Publication date: July 6, 2017
    Inventors: Toshikazu KONDO, Jun KOYAMA, Shunpei YAMAZAKI
  • Patent number: 9658506
    Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: May 23, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Jun Koyama, Shunpei Yamazaki
  • Publication number: 20160358945
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: August 16, 2016
    Publication date: December 8, 2016
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • Patent number: 9479152
    Abstract: A semiconductor device capable of simply performing power gating and a driving method thereof are provided. Power gating is started passively (automatically in the case of satisfying predetermined conditions). Specifically, the semiconductor device includes a transistor for selecting whether a power source voltage is supplied or not to a functional circuit. The power gating is started by turning off the transistor in the case where a voltage between a source and a drain is less than or equal to a predetermined voltage. Therefore, complicated operation is not needed at the time of starting power gating. Specifically, it is possible to start power gating without a process for predicting the timing at which an arithmetic operation performed in the functional circuit is terminated. As a result, it is possible to start power gating easily.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: October 25, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Jun Koyama