Abstract: A rubber composition comprising silica that has a BET specific surface area of not more than 130 m2/g and hardness of granulated particles as measured based on JIS K6221-1982 6.3.3 of not less than 23.5 cN can provide a rubber composition which is excellent in rubber physical properties while maintaining energy efficiency. A tire comprising a component consisted of the rubber composition can be also provided.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: A semiconductor device capable of simply performing power gating and a driving method thereof are provided. Power gating is started passively (automatically in the case of satisfying predetermined conditions). Specifically, the semiconductor device includes a transistor for selecting whether a power source voltage is supplied or not to a functional circuit. The power gating is started by turning off the transistor in the case where a voltage between a source and a drain is less than or equal to a predetermined voltage. Therefore, complicated operation is not needed at the time of starting power gating. Specifically, it is possible to start power gating without a process for predicting the timing at which an arithmetic operation performed in the functional circuit is terminated. As a result, it is possible to start power gating easily.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: Rubber composition for a tread, which enables not only improving handling stability, abrasion resistance, and fuel economy in a balanced manner, but also improving wet grip performance and processability in a balanced manner, in a pneumatic tire formed from the rubber composition. The rubber composition comprises a terminally-modified solution-polymerized styrene-butadiene rubber, a butadiene rubber synthesized in the presence of a rare earth catalyst, and a particular type of reinforcing agent.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: A rubber composition that can improve in good balance the fuel economy, wet-grip performance, and abrasion resistance, and a pneumatic tire that uses this rubber composition are provided. This rubber composition contains a rubber component, and carbon black and/or silica, wherein based on 100% by mass of the rubber component, the rubber component contains 5 to 50% by mass of natural rubber, 0.3 to 10% by mass of an epoxidized natural rubber, and at least 5% by mass of a conjugated diene polymer that has a constituent unit based on a conjugated diene and a constituent unit represented by formula (I) below, at least one terminal of the polymer being modified, and wherein a total content of the carbon black and the silica is 3 to 100 parts by mass per 100 parts by mass of the rubber component.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: It is an object to reduce power consumption of a display device which can perform multi-gray scale display and to suppress deterioration of an element included in the display device. The usage of a display device includes a first initialization period in which the gray scale level of an entire pixel portion is converted into a first gray scale level and a second initialization period in which the gray scale level of an entire pixel portion is converted into a second gray scale level. In the first initialization period, scanning of a plurality of signals and weighting of a holding period of each signal are performed. Therefore, the small number of scanning of signals can realize voltage application for an appropriate time with respect to each of a plurality of gray scale storage display elements included in the display device.

Abstract: A rubber composition for tires, which includes a rubber component containing a natural rubber component consisting of at least either a natural rubber or an epoxidized natural rubber, and an inorganic filler containing silica, and a pneumatic tire using such a rubber composition for tires are provided. The rubber composition can be used as a rubber composition for clinch apex, and in this case, the rubber component preferably consists of the natural rubber component, with the inorganic filler being contained in a range of 50 to 80 parts by mass and carbon black being contained in a range of 2 to 5 parts by mass relative to 100 parts by mass of the rubber component.

Abstract: A first transistor in which an image signal is input to one of a first source and a first drain through an image signal line and a first scan signal is input to the first gate through a first scan signal line; a capacitor whose one of two electrodes is electrically connected to the other of the first source and the first drain of the first transistor; a second transistor in which one of a second source and a second drain is electrically connected to the other of the first source and the first drain of the first transistor and a second scan signal is input to a second gate through a second scan signal line; and a liquid crystal element whose first electrode is electrically connected to the other of the second source and the second drain of the second transistor.

Abstract: Provided are a rubber composition for a tread, capable of improving the fuel economy and abrasion resistance in a balanced manner while achieving a good appearance and a good cure rate; and a pneumatic tire containing the rubber composition. The present invention relates to a rubber composition for a tread, including: a solution-polymerized styrene-butadiene rubber, carbon black, silica, and polyethylene glycol, wherein a rubber component of the rubber composition contains 60 mass % or more of the solution-polymerized styrene-butadiene rubber based on 100 mass % of the rubber component, and the rubber composition includes, per 100 parts by mass of the rubber component, 10 parts by mass or less of the carbon black, 50 parts by mass or more of the silica, and 0.1 to 3.5 parts by mass of the polyethylene glycol.

Abstract: Provided are a rubber composition for a base tread capable of improving fuel efficiency, handling stability, and durability (flex crack growth resistance) in a balanced manner, and a pneumatic tire formed from the rubber composition. The present invention relates to a rubber composition for a base tread, including: a rubber component and a reinforcing agent, the rubber component including natural rubber, a butadiene rubber (1) containing 1,2-syndiotactic polybutadiene crystals, a butadiene rubber (2) synthesized in the presence of a rare earth catalyst, and a modified butadiene rubber (3) having a cis content of not more than 50% by mass.

Abstract: Provided are a rubber composition for a tread, capable of improving the fuel economy and abrasion resistance in a balanced manner while achieving a good appearance and a good cure rate; and a pneumatic tire containing the rubber composition. The present invention relates to a rubber composition for a tread, including: a solution-polymerized styrene-butadiene rubber, carbon black, silica, and polyethylene glycol, wherein a rubber component of the rubber composition contains 60 mass % or more of the solution-polymerized styrene-butadiene rubber based on 100 mass % of the rubber component, and the rubber composition includes, per 100 parts by mass of the rubber component, 10 parts by mass or less of the carbon black, 50 parts by mass or more of the silica, and 0.1 to 3.5 parts by mass of the polyethylene glycol.