Abstract: A vehicle according to the present disclosure includes a brake device and an electronic control unit. The brake device is configured to change a front-rear distribution ratio of braking force with respect to front and rear wheels. The electronic control unit is configured to: control the brake device such that the front-rear distribution ratio is in accordance with a fixed distribution characteristic in which the front-rear distribution ratio is constant regardless of deceleration of the vehicle in at least a part of a first range being a required deceleration range lower than a lower limit value of the deceleration perceivable by a person in the vehicle; and control the brake device such that the front-rear distribution ratio is biased toward the rear wheel than that in the fixed distribution characteristic in a second range in which the deceleration is higher than that in the first range.

Abstract: A piezoelectric element includes: a piezoelectric body having a first surface and a second surface that are different from each other; a first electrode provided at the first surface; and a second electrode provided at the second surface. The piezoelectric body contains a helical chiral polymer crystal having an orientation axis as a crystal axis, the orientation axis is uniaxially oriented in a manner of intersecting both the first surface and the second surface, and a degree of orientation of the orientation axis in the piezoelectric body is 0.80 or more.

Abstract: Provided is a liquid ejecting head that ejects a liquid in a pressure chamber by a piezoelectric device, the piezoelectric device including a vibration plate, a piezoelectric layer containing lead, a first electrode provided between the vibration plate and the piezoelectric layer, and a second electrode provided on a side opposite to a side of the first electrode as viewed from the piezoelectric layer. The piezoelectric layer is preferentially oriented in a (100) plane, a lattice constant c defined by a crystal plane of the piezoelectric layer parallel to a film surface of the piezoelectric layer and a lattice constant a defined by a crystal plane perpendicular to the film surface satisfy 0.9945?c/a?1.012, and the thickness of the piezoelectric device is twice or more the thickness t (t<5 ?m) of the piezoelectric layer.

Abstract: Provided is a liquid ejecting head that ejects a liquid in a pressure chamber by a piezoelectric device, the piezoelectric device including a vibration plate, a piezoelectric layer containing lead, a first electrode provided between the vibration plate and the piezoelectric layer, and a second electrode provided on a side opposite to a side of the first electrode as viewed from the piezoelectric layer. The piezoelectric layer is preferentially oriented in a (100) plane, a lattice constant c defined by a crystal plane of the piezoelectric layer parallel to a film surface of the piezoelectric layer and a lattice constant a defined by a crystal plane perpendicular to the film surface satisfy 0.9945?c/a?1.012, and the thickness of the piezoelectric device is twice or more the thickness t (t<5 ?m) of the piezoelectric layer.

Abstract: A method for evaluating a piezoelectric film containing a perovskite oxide containing a lead atom, a zirconium atom, and a titanium atom, and the method includes a process of irradiating the piezoelectric film with X-rays to acquire an extended X-ray absorption fine structure (EXAFS) spectrum at the L3 absorption edge of the lead atom, a process of Fourier-transforming the extended X-ray absorption fine structure (EXAFS) spectrum to acquire a radial distribution function, and a process of acquiring the intensity of a first peak having a distance from the lead atom of 1.4±0.2 ?, the intensity of a second peak having a distance from the lead atom of 2.0±0.2 ?, and the intensity of a third peak having a distance from the lead atom of 2.6±0.

Abstract: A printing ink composition contains a disperse dye, a dispersant, and water, in which the dispersant contains one or more compounds represented by: wherein each Ar independently represents an aromatic ring having 6 to 24 carbon atoms, R1 and R2 independently represent a substituent selected from the group consisting of H, OCH3, OH, COOH, SO3H, OSO3H, an alkyl group having 1 to carbon atoms, and a salt thereof, R3 represents a substituent selected from the group consisting of OH, COOH, SO3H, OSO3H, and a salt thereof, R4 represents a substituent selected from the group consisting of H, OCH3, OC2H5, an alkyl group having 1 to 3 carbon atoms, and a salt thereof, the substituent introduction numbers a, b, c, and d each represent an integer of 1 to 8, and the number of repetitions m represents an integer of 1 to 50.

Abstract: A method for evaluating a piezoelectric film containing a perovskite oxide containing a lead atom, a zirconium atom, and a titanium atom, and the method includes a process of irradiating the piezoelectric film with X-rays to acquire an extended X-ray absorption fine structure (EXAFS) spectrum at the L3 absorption edge of the lead atom, a process of Fourier-transforming the extended X-ray absorption fine structure (EXAFS) spectrum to acquire a radial distribution function, and a process of acquiring the intensity of a first peak having a distance from the lead atom of 1.4±0.2 ?, the intensity of a second peak having a distance from the lead atom of 2.0±0.2 ?, and the intensity of a third peak having a distance from the lead atom of 2.6±0.

Abstract: A thermoelectric conversion element includes a first electrode on provided a substrate; a pyroelectric film that is provided on the first electrode, is formed of a composite oxide having an ABO3-type perovskite structure, and generates a surface charge due to temperature change; and a second electrode provided on the pyroelectric film, in which the composite oxide which forms at least a portion of layer in the pyroelectric film contains at least Pb, Nb, and Ti, and is formed of tetragonal crystal which is oriented in the direction of {100} on the substrate.

Abstract: A thermoelectric conversion element includes a first electrode on provided a substrate; a pyroelectric film that is provided on the first electrode, is formed of a composite oxide having an ABO3-type perovskite structure, and generates a surface charge due to temperature change; and a second electrode provided on the pyroelectric film, in which the composite oxide which forms at least a portion of layer in the pyroelectric film contains at least Pb, Nb, and Ti, and is formed of tetragonal crystal which is oriented in the direction of {100} on the substrate.

Abstract: A piezoelectric element includes a first conductive layer, a piezoelectric layer, and a second conductive layer. The piezoelectric layer is composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen, and the compound oxide has a perovskite crystal structure. The piezoelectric layer has a thermally stimulated current having at least two peaks including a low temperature-side peak and a high temperature-side peak, and the magnitude of the low temperature-side peak is 1/30 or less of that of the high temperature-side peak.

Abstract: A piezoelectric element includes a first conductive layer, a second conductive layer disposed to face the first conductive layer, and a piezoelectric layer disposed between the first conductive layer and the second conductive layer and composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a lead concentration gradient region in which the lead concentration increases from the first conductive layer side to the second conductive layer side. The lead concentration gradient region is disposed on the first conductive layer side of the piezoelectric layer.

Abstract: A piezoelectric element includes a first conductive layer, a second conductive layer facing the first conductive layer, and a piezoelectric layer between the first and second conductive layers, composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a first crystal layer on the first conductive layer side of the piezoelectric layer and a second crystal layer continued from the first crystal layer, nearer to the second conductive layer side than the first crystal layer. In the piezoelectric layer, the lead concentration in the first conductive layer side of the first crystal layer is lower than that in the second conductive layer side of the second crystal layer. In the piezoelectric layer, the oxygen concentration in the first conductive layer side of the first crystal layer is higher than that in the second conductive layer side of the second crystal layer.

Abstract: A piezoelectric element comprising a first electrode, a piezoelectric layer which is composed of a metal oxide containing lead, zirconium and titanium and which formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer has negatively charged Pb—O complex defects and positively charged Pb—O complex defects, the concentration of the negatively charged Pb—O complex defects being higher than the concentration of the positively charged Pb—O complex defects.

Abstract: A method of manufacturing a wiring substrate includes the steps of bonding a first substrate, which includes a pixel area and a drive area located around the pixel area, and is provided with a protruding section formed in the pixel area, to a second substrate on which a peripheral circuit is disposed, so that the peripheral circuit faces the drive area, and separating the second substrate from the first substrate while leaving the peripheral circuit on the first substrate. In the step of bonding the first and the second substrates, the peripheral circuit is pressure-bonded to the first substrate, and the protruding section is made abut on the second substrate in the pixel area.

Abstract: A piezoelectric element comprising a first electrode, a piezoelectric layer which is composed of a metal oxide containing lead, zirconium and titanium and which formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer has negatively charged Pb—O complex defects and positively charged Pb—O complex defects, the concentration of the negatively charged Pb—O complex defects being higher than the concentration of the positively charged Pb—O complex defects.

Abstract: A piezoelectric element includes a first conductive layer, a piezoelectric layer, and a second conductive layer. The piezoelectric layer is composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen, and the compound oxide has a perovskite crystal structure. The piezoelectric layer has a thermally stimulated current having at least two peaks including a low temperature-side peak and a high temperature-side peak, and the magnitude of the low temperature-side peak is 1/30 or less of that of the high temperature-side peak.

Abstract: A piezoelectric element includes a first conductive layer, a second conductive layer facing the first conductive layer, and a piezoelectric layer between the first and second conductive layers, composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a first crystal layer on the first conductive layer side of the piezoelectric layer and a second crystal layer continued from the first crystal layer, nearer to the second conductive layer side than the first crystal layer. In the piezoelectric layer, the lead concentration in the first conductive layer side of the first crystal layer is lower than that in the second conductive layer side of the second crystal layer. In the piezoelectric layer, the oxygen concentration in the first conductive layer side of the first crystal layer is higher than that in the second conductive layer side of the second crystal layer.

Abstract: A piezoelectric element includes a first conductive layer, a second conductive layer disposed to face the first conductive layer, and a piezoelectric layer disposed between the first conductive layer and the second conductive layer and composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a lead concentration gradient region in which the lead concentration increases from the first conductive layer side to the second conductive layer side. The lead concentration gradient region is disposed on the first conductive layer side of the piezoelectric layer.

Abstract: A method for manufacturing a semiconductor apparatus, the method including: aligning, on a temporal substrate, the plurality of device chips approximately in an L-shape, a plurality of groups of device chips, each group of device chips including a plurality of device chips aligned in an L-shape; arranging the plurality of groups of the device chips in a plurality of arrays on the temporal substrate, each array of device chips arranged in a band-shape, from a first long side to a second long side of the temporal substrate, a front of the band-shape being a corner of a perimeter of each group; delaminating a group of the device chips as one unit from the temporal substrate, and transferring onto the surface of the flexible substrate; and coupling each of the device chips in the group of device chips with the circuit on the flexible substrate.

Abstract: A wiring substrate comprises: a flexible substrate having a first region and a second region; a wiring line formed on the flexible substrate; and an electronic element that is disposed on the flexible substrate in the first region and electrically coupled to the wiring line. Flexibility of the first region is lower than flexibility of the second region.