Patents by Inventor Toshimitsu Konuma

Toshimitsu Konuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting organic compound and EL display device utilizing the same
    Publication number: 20040079923
    Abstract: By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×1010 &OHgr;cm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.
    Type: Application
    Filed: October 15, 2003
    Publication date: April 29, 2004
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Mayumi Mizukami
  • Electro-optical device and electronic device
    Publication number: 20040065902
    Abstract: An object of the present invention is to provide an EL display device having a high operation performance and reliability.
    Type: Application
    Filed: October 6, 2003
    Publication date: April 8, 2004
    Applicant: SEMICONDUCTOR ENERGY LABORATORY., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
  • Electro-optical device and electronic device
    Publication number: 20040061438
    Abstract: An object of the present invention is to provide an EL display device, which has a high operating performance and reliability.
    Type: Application
    Filed: September 18, 2003
    Publication date: April 1, 2004
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
  • Active matrix display device with an integrated circuit covered with a sealing material
    Patent number: 6703643
    Abstract: An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved.
    Type: Grant
    Filed: December 31, 2001
    Date of Patent: March 9, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Yuji Kawasaki, Toshimitsu Konuma, Satoshi Teramoto, Yoshiharu Hirakata
  • Electro-optical device
    Publication number: 20040036822
    Abstract: A liquid crystal electro-optical device comprising a pair of substrates at least one of them is light-transmitting, electrodes being provided on said substrates, and an electro-optical modulating layer being supported by said pair of substrates, provided that said electro-optical modulating layer comprises an anti-ferroelectric liquid crystal material or a smectic liquid crystal material which exhibits anti-ferroelectricity, and a transparent material.
    Type: Application
    Filed: August 22, 2003
    Publication date: February 26, 2004
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Nishi, Toshimitsu Konuma, Michio Shimizu, Kouji Moriya
  • Electro-optical device
    Patent number: 6693696
    Abstract: A liquid-crystal electro-optical device is offered which can operate at high speeds and easily oriented. The value of the surface tension of liquid crystal-orienting layers is 40 dynes/cm or more, and these layers are rubbed in antiparallel directions to each other. This reduces the pretilt angle of the molecules of a nematic liquid crystal sandwiched between two substrates. The anisotropy of the dielectric constant of the nematic liquid crystal is positive.
    Type: Grant
    Filed: October 4, 2000
    Date of Patent: February 17, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Toshimitsu Konuma
  • Thin film semiconductor integrated circuit and method for forming the same
    Patent number: 6690063
    Abstract: There is provided an aluminum gate type thin film transistor integrated circuit having a matrix region and a region in which driving circuits thereof are formed wherein impurity regions are selectively formed on a semiconductor thin film in the form of islands and a gate insulation film is formed to cover the impurity regions. Further, a thermal annealing or an optical annealing is performed on the impurity regions and regions in which channels are to be formed adjacent thereto and the gate insulation film to improve the characteristics of those regions themselves and to eliminate discontinuity at the boundaries between those regions. After the above-described steps, gate electrodes are formed. An anodic oxide is provided at least at the portion of a gate electrode provided in the matrix region where it intersects with a line in the layer above it to prevent the gate electrode from shorting with the line.
    Type: Grant
    Filed: December 7, 2001
    Date of Patent: February 10, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuhiko Takemura, Toshimitsu Konuma
  • Electro-optical device and electronic device
    Patent number: 6689492
    Abstract: An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, and EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: February 10, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
  • Electronic device
    Patent number: 6670637
    Abstract: To provide an electronic device capable of bright image display. A pixel is structured such that a switching TFT and a current controlling TFT are formed on a substrate and an EL element is electrically connected to the current controlling TFT. A gate capacitor formed between a gate electrode of the current controlling TFT and an LDD region thereof holds a voltage applied to the gate electrode, and hence a capacitor (condenser) is not particularly necessary in the pixel, thereby making the effective light emission area of the pixel large.
    Type: Grant
    Filed: February 26, 2002
    Date of Patent: December 30, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Jun Koyama, Kazutaka Inukai, Mayumi Mizukami
  • Light-emitting EL display device
    Patent number: 6641933
    Abstract: By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×1010 &OHgr;cm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.
    Type: Grant
    Filed: September 21, 2000
    Date of Patent: November 4, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Mayumi Mizukami
  • Electronic device
    Publication number: 20030201448
    Abstract: There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is electrically connected to the electric current controlling FET (202). The fluctuation in characteristics of the electric current controlling FET (202) is very low among pixels, and an image with high color reproducibility can be obtained. By taking hot carrier measures in the electric current controlling FET (202), the electronic device having high reliability can be obtained.
    Type: Application
    Filed: June 5, 2003
    Publication date: October 30, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Jun Koyama, Kazutaka Inukai, Mayumi Mizukami
  • Information input/output apparatus
    Patent number: 6628263
    Abstract: An information input/output apparatus comprising a display device, a screen on which an image displayed on the display device is projected with magnification, and a position detecting means for detecting a position of an arbitrarily designated particular point on the screen.
    Type: Grant
    Filed: August 22, 1997
    Date of Patent: September 30, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Takeshi Nishi, Shunpei Yamazaki
  • Semiconductor device and method for manufacturing the same
    Patent number: 6624477
    Abstract: A monolithic circuit comprises a plurality of thin film transistors. Source and drain regions of the TFT are provided with a metal silicide layer having a relatively low resistivity. Thereby, the effective distance between a gate and a source/drain electrode can be reduced.
    Type: Grant
    Filed: July 24, 1998
    Date of Patent: September 23, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuhiko Takemura, Hongyong Zhang, Toshimitsu Konuma
  • Electro-optical device
    Patent number: 6618105
    Abstract: A liquid crystal electro-optical device comprising a pair of substrates at least one of them is light-transmitting, electrodes being provided on said substrates, and an electro-optical modulating layer being supported by said pair of substrates, provided that said electro-optical modulating layer comprises an anti-ferroelectric liquid crystal material or a smectic liquid crystal material which exhibits anti-ferroelectricity, and a transparent material.
    Type: Grant
    Filed: February 13, 2001
    Date of Patent: September 9, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Nishi, Toshimitsu Konuma, Michio Shimizu, Kouji Moriya
  • Semiconductor device with a tapered hole formed using multiple layers with different etching rates
    Patent number: 6593235
    Abstract: A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The deposition condition of the second insulating film is varied during the deposition so that the etching rate of the second insulating film increases from a lower portion toward an upper portion. Thereby, a contact hole which is formed by etching through the first and second insulating films has a tapered configuration to improve a reliability of a connection made therein.
    Type: Grant
    Filed: April 18, 2002
    Date of Patent: July 15, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Hideki Uochi, Masahiko Hayakawa, Mitsunori Sakama, Toshimitsu Konuma, Shunpei Yamazaki
  • Light emitting device
    Publication number: 20030116772
    Abstract: In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and an anode, a protection film is formed in an interface between the anode that is a light exit electrode and the organic compound layer. The protection film formed on the organic compound layer has transmittance in the range of 70 to 100%, and when the anode is deposited by use of the sputtering method, a sputtering damage to the organic compound layer can be inhibited from being inflicted.
    Type: Application
    Filed: October 29, 2002
    Publication date: June 26, 2003
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Hiroko Yamazaki
  • Electro luminescence display device
    Patent number: 6580094
    Abstract: There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is electrically connected to the electric current controlling FET (202). The fluctuation in characteristics of the electric current controlling FET (202) is very low among pixels, and an image with high color reproducibility can be obtained. By taking hot carrier measures in the electric current controlling FET (202), the electronic device having high reliability can be obtained.
    Type: Grant
    Filed: October 26, 2000
    Date of Patent: June 17, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Jun Koyama, Kazutaka Inukai, Mayumi Mizukami
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20030100152
    Abstract: A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
    Type: Application
    Filed: September 16, 1994
    Publication date: May 29, 2003
    Inventors: TOSHIMITSU KONUMA, AKIRA SUGAWARA, YUKIKO UEHARA, HONGYONG ZHANG, ATSUNORI SUZUKI, HIDETO OHNUMA, NAOAKI YAMAGUCHI, HIDEOMI SUZAWA, HIDEKI UOCHI, YASUHIKO TAKEMURA
  • Light emitting device
    Publication number: 20030080338
    Abstract: In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. In a light emitting element consisting of an cathode, an organic compound layer and an anode, it is characterized in that a protector is formed on the interface between the anode being an electrode for taking out the light and the organic compound layer. Noted that the protector formed on the organic compound layer has a transmittance of 70-100%, and the damage given to the organic compound layer when the anode is formed by a sputtering method can be prevented.
    Type: Application
    Filed: October 24, 2002
    Publication date: May 1, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Hiroko Yamazaki
  • Liquid crystal device and method for manufacturing same with spacers formed by photolithography
    Publication number: 20030071957
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Application
    Filed: November 27, 2002
    Publication date: April 17, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Masakazu Odaka, Akira Mase, Toru Takayama, Kaoru Tabata, Chizuru Ishigaki, Ippei Kobayashi, Toshimitsu Konuma, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Hiroyuki Sakayori, Akio Osabe, Shunpei Yamazaki