Abstract: A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.

Abstract: A two-dimensional array type detecting device of the invention is formed of a detecting side substrate, and a readout side substrate laminated together. In the detecting side substrate, a high resistivity responsive semiconductor film is laminated on a substrate through a common electrode therebetween, and semiconductor films for connection are formed for the respective sections corresponding to a two-dimensional array arrangement. Therefore, leak and expansion of carriers produced in the high resistivity responsive semiconductor are prevented in a direct conversion system, wherein light or radiation enters from a side of the glass substrate, in which the common electrode is not formed. Thus, a detecting sensitivity and space resolution can be improved. Namely, a dynamic range is large, and a crosstalk is small.

Abstract: A detector panel having a bias application electrode and a converter layer formed on a supporting substrate, and a readout panel (active matrix panel), are bonded to each other directly through a single layer of electroconductive resin. That is, a pattern of photosensitive resin is formed before-hand on reading electrodes of the readout panel, and this readout panel and the converter layer are bonded together directly. Since the converter layer has no pixel electrodes formed thereon, the converter layer need not be smoothed, and the two panels need not be positionally adjusted to each other with high precision.

Abstract: In a method of the present invention for fabricating a two-dimensional image detector in which a light/radiations detection element is applied, an upper electrode, a first charge blocking layer, and a semiconductor layer having photoconductivity are provided on support substrate in the stated order, and thereafter, a surface of the semiconductor layer is sprayed with ceramic particles by means of an abrasive grain jet nozzle. The abrasive grain jet nozzle repeatedly makes a high-speed reciprocating motion in an X direction at constant cycles while jetting the ceramic particles to the entirety of the surface of the semiconductor layer of the counter substrate moving in a Y direction, so that the surface of the semiconductor layer is subjected to a flattening treatment. This enables to provide a two-dimensional image detector in which a light/radiations detection element that provides effective improvement of a charge blocking effect and suppression of deterioration of reliability is applied.