Patents by Inventor Toshio Fujii
Toshio Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040248115Abstract: An object of the present invention is to provide probes and primers for detecting beer-spoilage lactic acid bacteria with accuracy. The probes and primers for detecting beer-spoilage lactic acid bacteria according to the present invention each comprises a nucleotide sequence consisting of at least 15 nucleotides that hybridizes with the nucleotide sequence of SEQ ID NO: 1 or the complementary sequence thereof.Type: ApplicationFiled: November 21, 2003Publication date: December 9, 2004Inventor: Toshio Fujii
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Publication number: 20040226744Abstract: A module with a built-in circuit component of the present invention includes an electric insulating layer, a pair of wiring layers provided on both principal planes of the electric insulating layer, a plurality of via conductors electrically connecting the pair of wiring layers and passing through the electric insulating layer in a thickness direction thereof, and a circuit component buried in the electric insulating layer, wherein the plurality of via conductors are disposed in a circumferential portion of the electric insulating layer in accordance with a predetermined rule. The plurality of via conductors are placed at an interval, for example, so as to form at least one straight line, in a cut surface of the electric insulating layer in a direction parallel to a principal plane thereof.Type: ApplicationFiled: May 12, 2004Publication date: November 18, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Toshiyuki Asahi, Yutaka Taguchi, Yasuhiro Sugaya, Seiichi Nakatani, Toshio Fujii
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Patent number: 6787239Abstract: A material usable for the electrodes and the dielectric layer plasma display panels and capable of reducing the occurrence of yellowing and a high-image-quality plasma display panel using the material are provided. Using glass powder containing 25 to 50 wt % of Bi2O3, 5 to 35 wt % of B2O3, 10 to 20 wt % of ZnO, 5 to 20 wt % of BaO, 0 to 15 wt % of SiO2 and 0 to 10 wt % of Al2O3, the electrodes and the dielectric layer of a plasma display panel are formed.Type: GrantFiled: November 27, 2002Date of Patent: September 7, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshio Fujii, Tatsuo Mifune
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Publication number: 20040141144Abstract: A liquid crystal display apparatus is produced by the steps of arranging pixel electrodes, TFT devices and signal wiring on one surface of one substrate, arranging a transparent layer on a portion of one surface of a transparent substrate which portion is to be a display portion, bonding the one substrate and the transparent substrate to each other while the one surface having the pixel electrodes formed thereon faces the one surface having the transparent layer formed thereon, and injecting a liquid crystal between the substrates to form a liquid crystal layer. A fluidization path of the liquid crystal can be secured in a non-display portion, too, in which the TFT devices and the signal wiring are disposed when the liquid crystal is injected. Therefore, it is possible to shorten the injection time by increasing the liquid crystal injection speed and to improve productivity.Type: ApplicationFiled: September 23, 2003Publication date: July 22, 2004Applicant: Sharp Kabushiki KaishaInventors: Toshio Fujii, Naofumi Kondo
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Publication number: 20040050445Abstract: A steel pipe having a low yield ratio is provided. The steel pipe may contain, in mass, 0.01% to 0.20% C, 0.05% to 1.0% Si, 0.1% to 2.0% Mn and 0.001% to 0.05% Al, the microstructure of the steel pipe is composed of ferrite and pearlite, or ferrite and cementite, and the average size of the ferrite grains is at least 20 &mgr;m. The steel pipe may also contain, in mass, 0.03% to 0.20% C, 0.05% to 1.0% Si, 0.1% to 2.0% Mn, 0.001% to 0.05% Al, 0.01% to 0.5% Nb and 0.001% to 0.01% N, with the microstructure of the steel pipe being composed of ferrite and bainite, or ferrite, martensite and bainite, or ferrite and martensite.Type: ApplicationFiled: July 10, 2003Publication date: March 18, 2004Inventors: Masahiro Ohgami, Toshio Fujii, Toshiyuki Ogata, Hiroyuki Mimura
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Publication number: 20030177519Abstract: The present invention relates to improved promoters and utilization thereof, in particular to promoters which are improved so as not to undergo methylation in the course of constructing transformants, and utilization thereof.Type: ApplicationFiled: September 3, 2002Publication date: September 18, 2003Inventors: Toshio Fujii, Toshiya Ogawa, Masaharu Yoshioka, Kanji Mamiya, Toshiro Toguri
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Publication number: 20030108753Abstract: A material usable for the electrodes and the dielectric layer of plasma display panels and capable of reducing the occurrence of yellowing and a high-image-quality plasma display panel using the material are provided. Using glass powder containing 25 to 50 wt % of Bi2O3, 5 to 35 wt % of B2O3, 10 to 20 wt % of ZnO, 5 to 20 wt % of BaO, 0 to 15 wt % of SiO2 and 0 to 10 wt % of Al2O3, the electrodes and the dielectric layer of a plasma display panel are formed.Type: ApplicationFiled: November 27, 2002Publication date: June 12, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Toshio Fujii, Tatsuo Mifune
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Patent number: 6504222Abstract: A multi-quantum well infrared photo-detector, in which a plurality of multi-quantum well layers having respective sensitivities for different wavelength ranges of infrared are layered via a common contact layer. The infrared photo-detector includes a switch where one end is connected to the above common contact layer, and a current integration unit which is connected to the other end of the above switch. First and second voltages are applied to first and second contact layers at the opposite side of first and second multi-quantum well layer respectively. The above switch is conducted for a predetermined time so that either voltage between the above common contact layer and the first contact layer or voltage between the above common contact layer and the second contact layer becomes higher than the other, and the above current integration unit is charged or discharged by the current which flows in the above multi-quantum well layers.Type: GrantFiled: December 28, 1999Date of Patent: January 7, 2003Assignee: Fujitsu LimitedInventors: Yoshihiro Miyamoto, Hironori Nishino, Yusuke Matsukura, Toshio Fujii
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Patent number: 6445438Abstract: The liquid crystal display device of this invention includes a first substrate, a second substrate opposing the first substrate, and a liquid crystal layer sandwiched between the first and the second substrates, wherein the liquid crystal layer includes a polymer region and a liquid crystal domain surrounded by the polymer region in which liquid crystal molecules are oriented in an axial symmetrical manner, the first substrate includes a dry film having a concave portion on a surface facing the liquid crystal layer, and a symmetric axis in the liquid crystal domain substantially extends through the concave portion and is substantially perpendicular to the first substrate.Type: GrantFiled: January 26, 1999Date of Patent: September 3, 2002Assignee: Sharp Kabushiki KaishaInventors: Wataru Horie, Takayoshi Nagayasu, Toshio Fujii
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Patent number: 5759678Abstract: The present invention relates to a high-strength porous film or sheet consisting essentially of a high-molecular-weight polyethylene resin having a viscosity-average molecular weight of not less than 300,000, wherein the said film has a thickness of 5 to 50 .mu.m, an air permeability of 200 to 1,000 sec/100 cc, a porosity of 10 to 50% and a pin puncture strength of not less than 600 gf/25 .mu.m, and a process for producing the said film.Type: GrantFiled: October 1, 1996Date of Patent: June 2, 1998Assignee: Mitsubishi Chemical CorporationInventors: Toshio Fujii, Tatsuya Mochizuki
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Patent number: 5728412Abstract: This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene, This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.Type: GrantFiled: June 5, 1995Date of Patent: March 17, 1998Assignee: Kirin Beer Kabushiki KaishaInventors: Toshio Fujii, Akihiro Iwamatsu, Hiroyuki Yoshimoto, Toshitaka Minetoki, Takayuki Bogaki, Naoshi Nagasawa
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Patent number: 5686173Abstract: A biaxially stretched film for packaging, having a thickness of not more than 40 .mu.m; comprising surface layers each made of a propylene-ethylene copolymer resin and an intermediate layer disposed therebetween made of a polyamide resin comprising an aromatic polyamide resin, and having thickness of 10 to 80% of the overall thickness of the biaxially stretched film; and obtained by a process comprising a coextrusion step, a rapid cooling step, and a stretching step.Type: GrantFiled: September 12, 1995Date of Patent: November 11, 1997Assignee: Mitsubishi Chemical CorporationInventors: Toshio Fujii, Kazuhiro Kato, Toyomitsu Kondo, Sinji Kawasaki
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Patent number: 5686284Abstract: This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene. This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.Type: GrantFiled: June 5, 1995Date of Patent: November 11, 1997Assignee: Kirin Beer Kabushiki KaishaInventors: Toshio Fujii, Akihiro Iwamatsu, Hiroyuki Yoshimoto, Toshitaka Minetoki, Takayuki Bogaki, Naoshi Nagasawa
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Patent number: 5683634Abstract: A porous film or sheet including a resin composition mainly of an ultra-high molecular weight polyethylene having a viscosity-average molecular weight of not less than 500,000, and having a thickness of 10 to 100 .mu.m, an air permeability of 20 to 2,000 sec/100 cc, a porosity of 15 to 80%, a pin puncture strength (per 25 .mu.m of film thickness) of not less than 120 g, a thermal-shut down temperature of 90.degree. to 150.degree. C. and a heat puncture temperature of not less than 160.degree. C., and a process for producing the same.Type: GrantFiled: October 6, 1995Date of Patent: November 4, 1997Assignee: Mitsubishi Chemical CorporationInventors: Toshio Fujii, Keishin Handa, Kyosuke Watanabe
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Patent number: 5658777Abstract: This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene. This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.Type: GrantFiled: June 5, 1995Date of Patent: August 19, 1997Assignee: Kirin Beer Kabushiki KaishaInventors: Toshio Fujii, Akihiro Iwamatsu, Hiroyuki Yoshimoto, Toshitaka Minetoki, Takayuki Bogaki, Naoshi Nagasawa
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Patent number: 5521088Abstract: This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene. This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.Type: GrantFiled: June 18, 1993Date of Patent: May 28, 1996Assignee: Kirin Beer Kabushiki KaishaInventors: Toshio Fujii, Akihiro Iwamatsu, Hiroyuki Yoshimoto, Toshitaka Minetoki, Takayuki Bogaki, Naoshi Nagasawa
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Patent number: 5476811Abstract: A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first crystal surface and a second crystal surface which are crystallographically non-equivalent to each other on the substrate, introducing particles comprising constituent elements of the epitaxial layers into a region in the vicinity of the substrate, the particles including at least metal-organic molecules containing one of the elements constituting the epitaxial layers, decomposing the metal-organic molecules such that the layer constituting element therein is released as a result of the decomposition, and depositing the aforesaid particles including the element released by the decomposition of the metal-organic molecules on the first and second crystal surfaces so that a first epitaxial layer and a second epitaxial layer, respectively differing in properties from each other, are grown on respective the first and second crType: GrantFiled: March 23, 1995Date of Patent: December 19, 1995Assignee: Fujitsu LimitedInventors: Toshio Fujii, Adarsh Sandhu
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Patent number: 5308904Abstract: Disclosed herein are a resin composition for a porous film or sheet, comprising:100 parts by weight of a polyolefin (A) having a density of not more than 0.930 g/cm.sup.3 and a melt index of not more than 2 g/10 min;100 to 400 parts by weight of a filler (B);1 to 100 parts by weight of a plasticizer (C) composed of a compound having an ester linkage or an amide linkage in a molecule, and having a molecular weight of not less than 100, a boiling point of not lower than 200.degree. C. and a melting point of not higher than 100.degree. C. under an ordinary pressure; and0.0001 to 0.1 part by weight of a radical generator (D);a porous film or sheet therefrom; anda process for producing the same.Type: GrantFiled: July 10, 1992Date of Patent: May 3, 1994Assignee: Mitsubishi Kasei CorporationInventors: Toshio Fujii, Akihiko Sakai, Tasuku Suzuki
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Patent number: 5284783Abstract: A method of fabricating a semiconductor device having an epitaxial layer of a group III-V semiconductor material provided on an underlying crystal layer with a lattice matching therewith, the semiconductor material being doped to the p-type by addition of beryllium and selected from a group including gallium aluminum arsenide and indium gallium aluminum arsenide, in which the method comprises steps of growing the epitaxial layer on the underlying crystal layer, adding beryllium to a concentration level of about 5.times.10.sup.19 atoms/cm.sup.3 to about 5.times.10.sup.20 atoms/cm.sup.3 to the semiconductor material, and adding indium by an amount of about 0.5 mole percent to about 8 mole percent with respect to group III elements in the semiconductor material.Type: GrantFiled: July 2, 1991Date of Patent: February 8, 1994Assignee: Fujitsu LimitedInventors: Hideaki Ishikawa, Toshio Fujii, Eizo Miyauchi
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Patent number: 5273811Abstract: Disclosed herein is a stretched, laminated film comprising at least an outer layer, an intermediate layer and an inner layer,said outer layer and inner layer comprising a polypropylenes composition composed of 100 parts by weight of polypropylenes (A), 2 to 30 parts by weight of polybutene and/or polyisobutylene (B) and 0.2 to 5 parts by weight of a polyglycerin fatty acid ester (C), andsaid intermediate layer comprising polyesters (D).Type: GrantFiled: July 13, 1992Date of Patent: December 28, 1993Assignee: Mitsubishi Kasei CorporationInventors: Toshio Fujii, Toyomitsu Kondo, Kazuhiro Kato