Abstract: A wrapping film comprising at least an outer layer, an interlayer, and an inner layer in this order, (a) the wrapping film having a shear peel strength of 0.20 kg/cm.sup.2 or more and a 180.degree. peel strength of 8.0 g/50 mm or less, (b) the outer layer and the inner layer each being a polyolefin resin composition layer, (c) the interlayer being an aliphatic polyamide resin layer, (d) the wrapping film exhibiting a tensile elongation at break of 200% or less in the direction of film withdrawal and a tensile elongation at break of 80% or more in the direction perpendicular to the direction of film withdrawal, (e) the ratio of the tensile elongation at break in the direction of film withdrawal to that in the direction perpendicular to the direction of film withdrawal being in the range of 0.7 or less, and (f) the total thickness of the wrapping film being in the range of 40 .mu.m or less, and the thickness of the interlayer is in the range of 10 to 90% of the total thickness of the wrapping film.

Abstract: A thermal transfer recording sheet comprising a base film, a heat transferable ink layer formed on one side of the base film and a heat resistant lubricating layer formed on the other side of the base film, wherein the heat resistant lubricating layer contains a modified silicone oil having a viscosity of not lower than 600 cst, an average modified amount of which is not more than 1,500 g per mol of a modifying group.

Abstract: In an optosemiconductor device including a superlattice configuration (TBQ) of first and second quantum well layers and a potential barrier therebetween, photo-excited carriers are formed in the first quantum well layer and are tunnelled through the potential barrier toward the second quantum well layer, so that the tunneled carriers are accumulated in the second quantum well layer. An electric field is applied to the superlattice configuration to expel the tunneled carriers from the second quantum well layer.

Abstract: This invention provides an extensible film or sheet comprising 100 to 60 parts by weight of an ethylene copolymer having a density of less than 0.910 g/cm.sup.3 and 0 to 40 parts by weight of a linear polyethylene having a density of 0.910 to 0.945 g/cm.sup.3, specified by the following properties:1) film blocking as expressed by 180.degree. peel strength is 60 g/25 mm or less;2) tensile elongation is 750% or more;3) Elmendorf tear strength is 30 kg.cm/cm.sup.2 or more; and4) 1% secant modulus is 20 to 2,000 kg/cm.sup.2.The film or sheet of this invention has excellent extensibility and is free from blocking. It is also excellent in flexibility and hand and drape and can be preferably used as a film for gather of disposable diapers, etc., packing sheet for disposable diapers, and the like.

Abstract: Disclosed herein is a monoaxially or biaxially stretched film comprising principally of a linear polyethylene and capable of reduction of thickness to a greater extent than possible with the conventional films of this type.The film according to the present invention, though incomparably small in thickness, has excellent impact strength, stiffness, tensile strength and tear strength and can be favorably utilized as a film for packaging bags used for packaging relatively heavy commodities.

Abstract: A semiconductor quantum effect device having negative differential resistance characteristics includes a composite potential barrier layer including a first potential barrier layer and a second potential barrier layer; a carrier injection side semiconductor layer connected in contact with the first potential barrier layer; and a carrier injected side semiconductor layer connected in contact with the second potential barrier layer.

Abstract: Disclosed herein is a porous film having a thickness of 90 .mu.m or less obtained by uniaxially stretching a film produced by blow-extruding a composition comprising a linear polyethylene, filler and a radical forming agent, the bending resistance of the porous film in both the machine and transverse directions being 50 mm or less, the moisture permeability of the porous film being 1500 g/m.sup.2 .multidot.24 hr or above, and the surface strength of the porous film satisfying the following relation (I):Surface strength (kg).gtoreq.35.times.film thickness (mm) (I)and the process for producing the porous film defined above.

Abstract: An electrode structure of an electrode of a refractory metal or a silicide thereof on a layer of In.sub.x Ga.sub.1-x As (0<x<1) on a substrate of a III-V compound semiconductor is ohmic and is stable even at a high temperature, for example, 900.degree. C. This high temperature stable ohmic electrode structure allows ion implantation into the substrate with the electrode as a mask followed by annealing to form a doped region in alignment with the edge of the electrode.

Abstract: Group III-V multi-alloy semiconductors, such as ternary, quaternary, and pentanary semiconductors, grown on a binary group III-V compound semiconductor substrate, are used as an active layer in opto-devices, high electron mobility transistors, etc. A method of growing multilayers, lattice-matched to the binary substrate and having specific energy band gaps, includes a molecular beam epitaxy (MBE) process. The present invention includes growing a quaternary or pentanary semiconductor layer using a minimum number of effusion cells and eliminating readjustment of molecular beam intensities from one layer to another layer during a series of epitaxial growth steps. As an example of quaternary growth, four effusion cells are utilized and two combinations of three effusion cells are alternately operated, one including an Al effusion cell and the other including a Ga effusion cell. Each of the three effusion cells is capable of growing a ternary semiconductor lattice-matched to the substrate.

Abstract: A resonant tunneling semiconductor device having a large peak-to-valley current density J.sub.p /J.sub.v ratio comprises an InP substrate, a first contact compound semiconductor lattice-matched to Inp, a first barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z (In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), a well layer of In.sub.1-y Ga.sub.y As, (0.48.gtoreq.y.gtoreq.0.46), a second barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z -(In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), and a second contact layer compound semiconductor lattice-matched to InP:The first and second barrier layers and the well layer forming a quantum-well structure.Instead of the quantum-well structure above, it is possible to adopt the quantum-well structure of strained-layers comprising first and second barrier layers which are of In.sub.1-x Al.sub.x As (0.48<x.ltoreq.1) and have a thickness of 0.5 to 10.0 nm.

Abstract: A high electron mobility single heterojunction semiconductor devices having a layer configuration comprising a N-type AlGaAs layer grown on an undoped GaAs layer grown on an undoped AlGaAs layer grown on a semiconductor substrate containing an impurity producing a deep level. The undoped AlGaAs layer has at least three functions including (a) a getter for the deep level impurity which may be diffused from the substrate during an annealing process, (b) a buffer improving the crystal condition of the undoped GaAs layer, and (c) a test layer grown for the purpose of predetermining the intensity of molecular or ion beams for each of Al, Ga, As and dopants e.g. Si. This allows annealing processes and ion implantation processes to be introduced to the method for production of this type of semiconductor devices without reducing the electron mobility thereof.

Abstract: Disclosed herein are a polypropylene resin composition comprising 100 parts by weight of propylene homopolymer showing a stereoregularity of a boiling heptane-insoluble part thereof of not less than 0.960 as an isotactic pentad rate obtained by .sup.13 C-NMR and 0.01 to 2 parts by weight of a hydrocarbon polymer having completely or partially saturated main hydrocarbon chain and at least one hydroxy group at an end of the main hydrocarbon chain, and a biaxially stretched film comprising the polypropylene resin composition.