Patents by Inventor Toshio Kamiya

Toshio Kamiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10615287
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: April 7, 2020
    Assignees: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20190196381
    Abstract: An image forming apparatus includes: a housing part that is capable of housing a plurality of recording materials in such a manner that one recording material is put on another; a transport part that transports a recording material from the housing part; and a hardware processor that detects a kind of the recording material transported by the transport part, detects an amount of the recording materials housed in the housing part, detects replacement of recording materials housed in the housing part, or addition of recording materials in the housing part, on the basis of a result of the detection by the hardware processor, and, on the basis of a result of the detection by the hardware processor, switches whether or not to execute, by the hardware processor, the kind detection of the recording materials housed in the housing part.
    Type: Application
    Filed: November 28, 2018
    Publication date: June 27, 2019
    Applicant: KONICA MINOLTA, INC.
    Inventors: Shota IGO, Masahiro KAMIYA, Katsuyuki IKUTA, Toshio TSUBOI, Tatsuya EGUCHI
  • Publication number: 20180374959
    Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
    Type: Application
    Filed: August 30, 2018
    Publication date: December 27, 2018
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, AGC Inc.
    Inventors: Hideo HOSONO, Toshio KAMIYA, Hideya KUMOMI, Junghwan KIM, Nobuhiro NAKAMURA, Satoru WATANABE, Naomichi MIYAKAWA
  • Publication number: 20180323313
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 8, 2018
    Inventors: Hideo HOSONO, Masahiro HIRANO, Hiromichi OTA, Toshio KAMIYA, Kenji NOMURA
  • Patent number: 10032931
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: July 24, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Patent number: 10032930
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: July 24, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Patent number: 9947803
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: April 17, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECH
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Publication number: 20170125605
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: January 10, 2017
    Publication date: May 4, 2017
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 9583637
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: February 28, 2017
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 9269826
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Grant
    Filed: January 5, 2011
    Date of Patent: February 23, 2016
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Publication number: 20150325707
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: July 22, 2015
    Publication date: November 12, 2015
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 9130049
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: September 8, 2015
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20130277672
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: June 20, 2013
    Publication date: October 24, 2013
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 8435473
    Abstract: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F?, Cl? or Br?). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+).
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: May 7, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Yoichi Kamihara, Masahiro Hirano, Toshio Kamiya, Hiroshi Yanagi
  • Patent number: 8420236
    Abstract: A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: April 16, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Masahiro Hirano, Hidenori Hiramatsu, Toshio Kamiya, Hiroshi Yanagi, Eiji Motomitsu
  • Patent number: 8288321
    Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: October 16, 2012
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
  • Patent number: 8237166
    Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: August 7, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8212252
    Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: July 3, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Tohru Den, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8203146
    Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: June 19, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Katsumi Abe, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8186627
    Abstract: In order to control an attitude of a movable object having a flexible member (50) through an attitude maneuver, first, based on vibration of the flexible member at the time of the attitude maneuver, for example, a sampling function including no frequency components equal to or higher than a particular frequency is obtained. With the use of the sampling function, a control target value is created as a previously-frequency-shaping-type feedforward control law. Based on the control target value, attitude control data is created. The attitude control data can be used for the attitude maneuver with respect to the movable object.
    Type: Grant
    Filed: May 2, 2007
    Date of Patent: May 29, 2012
    Assignees: NEC TOSHIBA Space Systems, Ltd., Japan Aerospace Exploration Agency
    Inventors: Toshio Kamiya, Ken Maeda, Tatsuaki Hashimoto, Shinichiro Sakai