Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Abstract: In an electride C12A7 provided by replacing free oxygen in 12CaO.7Al2O3 with electrons, a material having metallic electroconductivity and an electric conductivity of more than 5×102 S/cm at room temperature could not have been produced without difficulties. An electride 12CaO.7Al2O3, which has metallic electroconductivity and has an electric conductivity of more than 5×102 S/cm at room temperature, can be produced by heat-treating titanium metal vapor and 12CaO.7Al2O3 single crystal, sinter, or thin film at a temperature above 600° C. and below 1,450° C. for less than 240 hours. Further, thermoelectric field electron release can also be realized using an electron release chip fabricated from the electride.

Abstract: In order to control an attitude of a movable object having a flexible member (50) through an attitude maneuver, first, based on vibration of the flexible member at the time of the attitude maneuver, for example, a sampling function including no frequency components equal to or higher than a particular frequency is obtained. With the use of the sampling function, a control target value is created as a previously-frequency-shaping-type feedforward control law. Based on the control target value, attitude control data is created. The attitude control data can be used for the attitude maneuver with respect to the movable object.

Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: Disclosed is an attitude change control system that is designed to efficiently output a torque for attitude change of a space craft using CMGs and realizes a real time CMG driving rule. A CMG gimbal steering law 15 generates target profiles for setting angle and angular velocity for each gimbal by applying an anisotropic weighted gradient method based upon the necessary torque calculated by a feed back controller 13 and a feed forward controller 14 from the angle and angular velocity in the target direction from the attitude navigator 12 and the current angle and angular velocity of the space craft estimated by the attitude estimator 11 as well as the current condition of each gimbal from the CMG 40, thereby controlling the CMG 40 for changing the attitude of the space craft dynamics 50 to the target direction.

Abstract: A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: Disclosed is an attitude change control system that is designed to efficiently output a torque for attitude change of a space craft using CMGs and realizes a real time CMG driving rule. A CMG gimbal steering law 15 generates target profiles for setting angle and angular velocity for each gimbal by applying an anisotropic weighted gradient method based upon the necessary torque calculated by a feed back controller 13 and a feed forward controller 14 from the angle and angular velocity in the target direction from the attitude navigator 12 and the current angle and angular velocity of the space craft estimated by the attitude estimator 11 as well as the current condition of each gimbal from the CMG 40, thereby controlling the CMG 40 for changing the attitude of the space craft dynamics 50 to the target direction.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

Abstract: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10?18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.