Abstract: An adhesive substrate includes a support base member and an adhesive layer provided on the support base member. The support base member contains electroconductive particles and an insulating resin, and has a recessed and projected pattern with two or more projected portions on one surface or both surfaces of the support base member. The adhesive layer is provided at least on upper surfaces of the projected portions in the recessed and projected pattern of the support base member. The adhesive layer on the upper surfaces of the projected portions has an upper surface with a curved surface. Thus, the present invention provides an adhesive substrate capable of selectively picking up and quickly transferring large amounts of fine chips and particles, a method for producing the adhesive substrate, and a transfer device.

Abstract: The present invention is a quartz glass fiber-containing prepreg including: (A) a quartz glass fiber; and (B) a curable resin composition, wherein at least one condition of conditions: (1) a dose of ?-ray contained in the quartz glass fiber is 0.005 c/cm2·hour or smaller, and, each of metal ion contents of Na+, Li+ and K+ is 1 ppm or lower; (2) the quartz glass fiber contains the number of foams of 10 foams/m2 or smaller a unit area; and (3) the quartz glass fiber-containing prepreg has the common bending stiffness in the range of a thickness of 100 to 200 ?m measured by a method described in JIS R 3420:2013 of 500 N·m2 or larger is satisfied. This provides a quartz glass fiber-containing prepreg that has particularly excellent dielectric characteristics, has excellent dielectric characteristics and the heat resistance, and/or has high handling property because of high bending stiffness characteristics.

Abstract: A silicone-modified epoxy resin composition that offers a cured product excellent in low permeability to gas, mechanical strength, and heat resistance and transparency and further offers an optical semiconductor sealing material excellent in heat cycle resistance, and a cured epoxy resin product obtained by curing the composition. The epoxy resin composition comprises the following components (A) to (C): (A) a silicone-modified epoxy resin having a cyclic siloxane structure, (B) a silicone-modified epoxy resin having a branched siloxane structure, and (C) an epoxy resin curing agent containing a polyvalent carboxylic acid having a tricyclodecane structure and a carboxylic anhydride compound.

Abstract: The present invention is an anisotropic conductive film including: a peelable substrate, a base layer containing an insulating resin on the peelable substrate, bumps of electroconductive nanoparticle assemblies disposed on the base layer at intervals of 1 ?m to 100 ?m, and a coating layer containing an insulating resin formed on the base layer so as to coat the bumps, wherein the peelable substrate is peelable to the base layer. This provides an anisotropic conductive film for connecting circuit electrodes having fine patterns.

Abstract: A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient ?1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient ?2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient ?3 of the base satisfy both of the following formula (1) and (2); ?1<?3<?2??(1) ?2<?1+?2?2?3<2??(2) wherein the unit of the linear expansion coefficient is ppm/K.

Abstract: A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient ?1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient ?2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient ?3 of the base satisfy both of the following formula (1) and (2); ?1<?3<?2??(1) ?2<?1+?2?2?3<2??(2) wherein the unit of the linear expansion coefficient is ppm/K.

Abstract: A method for producing a concentrating solar cell module having the steps of: preparing a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes, and a support composed of a thermosetting resin, the support surrounding each of the mounting regions of the base portion; mounting the solar cells on the mounting regions; molding a condensing lens above the mounting regions so as to encapsulate the solar cells, plating a surface of the mounting regions of the prepared base portion after the preparing step and before the mounting step; and joining the support to the base portion after the mounting step and before the molding step, wherein in the molding step, the condensing lens is molded with a transparent thermosetting silicone resin.

Abstract: A concentrating solar cell module including; a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes; a support composed of a thermosetting resin, the support surrounding each of the mounting regions of the base portion; the solar cells mounted on the mounting regions; and a condensing lens molded above the mounting regions so as to encapsulate the solar cells, wherein a surface of the mounting regions of the base portion is plated, the condensing lens is molded with a transparent thermosetting silicone resin, and the support is joined to a surface of the base portion, the surface to which the support is joined is on the same side of the base portion as the surface on which the solar cells are mounted.

Abstract: This is to provide a method for manufacturing a semiconductor apparatus which can shorten the manufacturing process of a semiconductor device, particularly a fan-out package without causing sealing defects such as voids or warpage, and can accomplish reduction in the manufacturing cost or improve in yield. There is provided a method for manufacturing a semiconductor apparatus which comprises preparing a semiconductor device-mounted substrate onto which a plurality of flip chip type semiconductor devices have been mounted onto a wiring layer formed on the substrate, collectively sealing a device-mounted surface of the semiconductor device-mounted substrate with a sealing material attached with a base material for sealing a semiconductor having a base material and a sealing resin layer containing an uncured or semi-cured thermosetting resin component formed on one surface of the base material, and removing the substrate from the collectively sealed semiconductor device-mounted substrate.

Abstract: The invention provides a silicone-organic resin composite laminate comprising a laminate in which an organic resin layer containing an inorganic fiber cloth into which a thermosetting organic resin has been impregnated, and a silicone resin layer containing an inorganic fiber cloth into which a curable silicone resin has been impregnated, being laminated with each one or more layers, and metal foils laminated at an uppermost surface and a lowermost surface of the laminate. There can be provided a silicone-organic resin composite laminate which has low linear expansion, good thermal dimensional stability, excellent mechanical characteristics, and excellent heat resistance and light resistance, and is suitable as a mounting substrate for an LED which corresponds to increase in luminance of the LED mounted substrate.

Abstract: A silicone-modified epoxy resin which yields a cured product having low gas permeability and excellent strength; a composition of the silicone-modified epoxy resin; and an epoxy resin cured product obtainable by curing the composition, are provided. An epoxy resin represented by the following Formula (1): wherein R1 represents a hydrocarbon group having 1 to 6 carbon atoms; X represents an organic group having a norbornane epoxy structure, or a hydrocarbon group having 1 to 6 carbon atoms; n represents an integer from 1 to 3; plural R1s and plural Xs present in the formula may be respectively identical or different; and two or more of plural Xs represent an organic group having a norbornane epoxy structure.

Abstract: The purpose of the present invention is to provide a silicone-modified epoxy resin which produces a cured product having excellent low gas permeability and strength; a composition of the resin; and an epoxy resin cured product obtainable by curing the composition. Disclosed is an epoxy resin represented by the following Formula (1): wherein R1 independently represents a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R2 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms; R3 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms or a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R4 represents an oxygen atom or a divalent hydrocarbon group having an aliphatic cyclic structure; R5 represents silicone chain having a norbornane epoxy structure at either end; and X represents an organic group having a norbornane epoxy group.

Abstract: The present invention provides a method for producing a surface-treated glass fiber film comprising steps of: preparing a treatment solution consisting of a mixture of a hydrolysable silane compound and a partially hydrolyzed condensate thereof; coating a glass fiber film with the treatment solution so that the attached amount of the mixture is 2% by mass or more and 90% by mass or less, relative to 100% by mass of the surface-treated glass fiber film and drying the same; and heat-treating the glass fiber film coated. There can be provided a method for producing a surface-treated glass fiber film having high strength, a low average coefficient of linear expansion, a high storage rigidity at high temperature and excellent in heat resistance, flexibility, electric insulation, dimensional stability, and surface homogeneity, with less environmental impact.

Abstract: A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient ?1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient ?2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient ?3 of the base satisfy both of the following formula (1) and (2); ?1<?3<?2 ??(1) ?2<?1+?2?2?3<2 ??(2) wherein the unit of the linear expansion coefficient is ppm/K.

Abstract: The present invention provides an electromagnetic wave shielding support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon, the support base-attached encapsulant including a support base having an electromagnetic wave shielding property of 20 dB or more within a range of 100 MHz to 1,000 MHz, and an encapsulant composed of a thermosetting resin layer laminated on the support base.

Abstract: A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient ?1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient ?2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient ?3 of the base satisfy both of the following formula (1) and (2); ?1<?3<?2 ??(1) ?2<?1+?2?2?3<2 ??(2) wherein the unit of the linear expansion coefficient is ppm/K.

Abstract: Manufacturing a semiconductor apparatus includes preparing a support-base attached encapsulant including a thermosetting resin layer stacked as an encapsulant on a support base, coating a semiconductor-device mounting surface of a substrate on which semiconductor devices are mounted, or a semiconductor-device forming surface of a wafer on which semiconductor devices are formed with the thermosetting resin layer of the support-base attached encapsulant, heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor-device mounting surface of the substrate or the semiconductor-device forming surface of the wafer, and cutting the encapsulated substrate or wafer by dicing.

Abstract: An epoxy resin represented by the following formula (1) wherein R1 represents an alkylene group having 2 to 6 carbon atoms and optionally containing an ester or ether bond; R2 represents a monovalent aliphatic hydrocarbon group having 1 to 6 carbon atoms or a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R3 represents an oxygen atom or a phenylene group; k represents 1 to 10 as an average value; m represents an integer of 0 to 2; n represents 0 to 10 as an average value; and a plurality of groups R1, R2, R3, k, or m present in the formula may be the same or different from each other.

Abstract: A method for manufacturing a semiconductor apparatus, including an encapsulating step of collectively encapsulating a device mounting surface of a substrate having semiconductor devices mounted thereon with a base-attached encapsulant having a base and a thermosetting resin layer formed on one surface of the base, the semiconductor devices being mounted by flip chip bonding, the encapsulating step including a unifying stage of unifying the substrate having the semiconductor devices mounted thereon and the base-attached encapsulant under a reduced pressure condition with a vacuum of 10 kPa or less, and a pressing stage of pressing the unified substrate with a pressure of 0.2 MPa or more.

Abstract: A silicone-modified epoxy resin which yields a cured product having low gas permeability and excellent strength; a composition of the silicone-modified epoxy resin; and an epoxy resin cured product obtainable by curing the composition, are provided. An epoxy resin represented by the following Formula (1): wherein R1 represents a hydrocarbon group having 1 to 6 carbon atoms; X represents an organic group having a norbornane epoxy structure, or a hydrocarbon group having 1 to 6 carbon atoms; n represents an integer from 1 to 3; plural R1s and plural Xs present in the formula may be respectively identical or different; and two or more of plural Xs represent an organic group having a norbornane epoxy structure.