Abstract: An antireflection film capable of reliably preventing light (or laser light), which is incident on a glass substrate and which reaches a metal film, from being reflected by the metal film. The antireflection film provided between a metal film having a complex refractive index represented by NM=nM?i·km and a glass substrate having a refractive index NG includes, from the metal film side: (A) a first dielectric layer having a refractive index N1; (B) a second dielectric layer provided on the first dielectric layer and having a refractive index N2; and (C) a third dielectric layer provided on the second dielectric layer and having a refractive index N3, in which N1<nM, N1>NG, N2<NG, and N3>NG hold. Accordingly, light which is incident on the glass substrate and which reaches the metal film is prevented from being reflected by the metal film.

Abstract: A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.

Abstract: A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode.

Abstract: A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode.

Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.

Abstract: A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel.

Abstract: A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.

Abstract: An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible.

Abstract: A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.

Abstract: An optical element includes an optical film; a substrate; and an adhesive layer disposed between the optical film and the substrate, wherein the adhesive layer is made of NbOx, where 0<x<2.5.

Abstract: Provided is a method of depositing a low-refractive-index film, by which a thin film having uniform composition distribution in the film and having a low refractive index can be formed, a low-refractive-index film deposited by the method of depositing a low-refractive-index film, and furthermore, an antireflection film including the low-refractive-index film. In a method of depositing a low-refractive-index film including depositing a low-refractive-index film composed of MgF2—SiO2 on a substrate 11 by a reactive sputtering method, sputtering deposition is conducted using targets 4A and 4B composed of a sintered body of MgF2—SiO2 by applying an alternating voltage with a frequency in the range of 20 to 90 kHz between the substrate 11 and the targets 4A and 4B in an atmosphere of a mixed gas of an inert gas O2.

Abstract: A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.

Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.

Abstract: A light-emitting diode device and backlight apparatus and liquid-crystal display apparatus using light-emitting diode device are provided. A light-emitting diode device has a lens covered around a light-emitting diode chip and a processed portion for adjusting light going from the light-emitting diode chip along the central axis of the lens is provided at the light-emitting diode chip or the lens or being provided right above the lens. The light-emitting diode chip is processed near the central axis by a suitable method such as etching. Alternatively, a diffusion material containing low refractive index material portion or an angle selective film is provided on the lens. A light-emitting diode device is able to adjust a quantity of light emitted from the LED chip along the central axis of the lens so that light can be radiated with a desired angle distribution.

Abstract: There is provided a lighting device that lights a liquid crystal panel, including a substrate (51) on which red, green and blue light separating plates (52R, 52G, 52B) are alternately disposed with a pitch of w in array. Red LEDs (53R) are disposed one at every other center between the green and blue light separating plates (52G, 52B), green LEDs 53G are disposed one at every other center between the blue and red light separating plates (52B, 52R), and blue LEDs (53B) are disposed one at every other center between the red and green light separating plates (52R, 52G).

Abstract: The present invention provides a stereoscopic image display apparatus. The stereoscopic image display apparatus includes a first projection element group, a second projection element group, and a reflecting optical system. The first projection element group includes a plurality of first projection elements operable to project first light fluxes in a first direction. The second projection element group includes a plurality of second projection elements operable to project second light fluxes in a second direction which is different from the first direction and in which the second light fluxes are directed to the first light fluxes. The reflecting optical system is operable to reflect the second light fluxes toward the first direction.

Abstract: An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible.

Abstract: A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel.

Abstract: A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel.

Abstract: A method of forming a transparent optical film includes the step of forming an optical film that is transparent on a substrate by a reactive sputtering process using a Mg—Si metal target in an atmosphere into which a gas of a fluorine-containing compound is introduced and in which the total pressure is adjusted to 8 Pa or more.