Patents by Inventor Toshiyuki Isa

Toshiyuki Isa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050244995
    Abstract: An object of the present invention is to provide a method for manufacturing a display device with few steps and high yield. One feature of the invention is to form a first mask pattern having low wettability over a conductive layer, form a second mask pattern having high wettability over the conductive layer using the first mask pattern as a mask, and form a mask pattern for etching the conductive layer by removing the first mask pattern. Another feature is to form a pixel electrode by etching the conductive layer.
    Type: Application
    Filed: April 20, 2005
    Publication date: November 3, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kunihiko Fukuchi, Toshiyuki Isa, Gen Fujii
  • Publication number: 20050163938
    Abstract: The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.
    Type: Application
    Filed: January 26, 2005
    Publication date: July 28, 2005
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Osamu Nakamura, Shinji Maekawa, Gen Fujii, Toshiyuki Isa