Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.

Abstract: Disclosed herein is a process for production of a nitride semiconductor device having good characteristic properties (such as light-emitting performance). The process does not thermally deteriorate the active layer while nitride semiconductor layers are being grown on the active layer. The process consists of forming an active layer on a substrate by vapor phase growth at a first growth temperature, and subsequently forming thereon one or more nitride semiconductor layers at a temperature which is lower than said first growth temperature plus 250° C. The process yields a nitride semiconductor device in which the active layer retains its good crystal properties, without nitrogen voids and metallic indium occurring therein due to breakage of In—N bonds.

Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

Abstract: A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

Abstract: A display unit includes light emitting devices arrayed in such a manner as to be spaced from each other, and a sealing material for covering the surfaces of the light emitting devices, wherein the sealing material has a light diffusion function. The light diffusion function is given to the sealing material by providing a reflection mirror and a half mirror in the sealing material, dispersing, in the sealing material, fine particles having a refractive index different from that of the sealing material, or dispersing bubbles in the sealing material. Since the light diffusion function is given to the sealing material, the light emission region of each of the light emitting devices is substantially enlarged to a size nearly equal to an array pitch of the light emitting devices, to thereby obtain an image display excellent in viewability.

Abstract: The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a device holding substrate. Subsequently, the light-emitting diodes are transferred onto a second substrate. The irradiation of the interface with the energy beam enables the devices to be easily released from the first substrate.

Abstract: A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: The invention provides an electrochromic display unit with high-quality display. The display unit comprises a transparent electrode (1), a display layer (2) which is formed on the transparent electrode (1) and which changes a color according to the amount of accumulated electrical charges, and an ion conductive layer (3) formed on the display layer (2). A plurality of picture electrodes (4) are formed on the ion conductive layer (3) on the side opposite to the display layer (2). The picture electrodes (4) are driven independently by, for example, a corresponding thin film transistors (6). In driving, by applying a drive current having given amount of electrical charges and then applying a certain amount of an inverted current, a certain amount of coloration is deducted, and extra coloration of the display layer (2) is eliminated.

Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

Abstract: A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

Abstract: A display unit includes light emitting devices arrayed in such a manner as to be spaced from each other, and a sealing material for covering the surfaces of the light emitting devices, wherein the sealing material has a light diffusion function. The light diffusion function is given to the sealing material by providing a reflection mirror and a half mirror in the sealing material, dispersing, in the sealing material, fine particles having a refractive index different from that of the sealing material, or dispersing bubbles in the sealing material. Since the light diffusion function is given to the sealing material, the light emission region of each of the light emitting devices is substantially enlarged to a size nearly equal to an array pitch of the light emitting devices, to thereby obtain an image display excellent in viewability.