Abstract: The present disclosure includes apparatuses and methods related to logical operations using memory cells. An example apparatus comprises a first memory cell controlled to invert a data value stored therein and a second memory cell controlled to invert a data value stored therein. The apparatus may further include a controller coupled to the first memory cell and the second memory cell. The controller may be configured to cause performance of a logical operation between the data value stored in the first memory cell and the data value stored in the second memory cell.

Abstract: The present disclosure includes apparatuses and methods related to comparing data patterns in memory. An example method can include comparing a number of data patterns stored in a memory array to a target data pattern. The method can include determining whether a data pattern of the number of data patterns matches the target data pattern without transferring data from the memory array via an input/output (I/O) line.

Abstract: Methods and devices related to transferring data between DRAM and SRAM. One method includes activating a first portion of a dynamic random access memory (DRAM), reading data from the first portion of the DRAM, latching the data from the first portion of the DRAM in one or more sense amplifiers, and writing the data from the one or more sense amplifiers to a first portion of a static random access memory (SRAM).

Abstract: The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry is configured to perform a logical operation using a data value stored in a first memory cell coupled to a sense line as a first input and a data value stored in a second memory cell coupled to the sense line as a second input. The sensing circuitry is configured to perform the logical operation without transferring data via a sense line address access.

Abstract: Methods and devices related to transferring data between DRAM and SRAM. One method includes activating a first portion of a dynamic random access memory (DRAM), reading data from the first portion of the DRAM, latching the data from the first portion of the DRAM in one or more sense amplifiers, and writing the data from the one or more sense amplifiers to a first portion of a static random access memory (SRAM).

Abstract: The present disclosure includes apparatuses and methods for physical page, logical page, and codeword correspondence. A number of methods include error coding a number of logical pages of data as a number of codewords and writing the number of codewords to a number of physical pages of memory. The number of logical pages of data can be different than the number of physical pages of memory.

Abstract: The present disclosure includes apparatuses and methods related to determining an XOR value in memory. An example method can include performing a NAND operation on a data value stored in a first memory cell and a data value stored in a second memory cell. The method can include performing an OR operation on the data values stored in the first and second memory cells. The method can include performing an AND operation on the result of the NAND operation and a result of the OR operation without transferring data from the memory array via an input/output (I/O) line.

Abstract: One example of the present disclosure includes performing a comparison operation in memory using a logical representation of a first value stored in a first portion of a number of memory cells coupled to a sense line of a memory array and a logical representation of a second value stored in a second portion of the number of memory cells coupled to the sense line of the memory array. The comparison operation compares the first value to the second value, and the method can include storing a logical representation of a result of the comparison operation in a third portion of the number of memory cells coupled to the sense line of the memory array.

Abstract: Examples of the present disclosure provide apparatuses and methods related to generating and executing a control flow. An example apparatus can include a first device configured to generate control flow instructions, and a second device including an array of memory cells, an execution unit to execute the control flow instructions, and a controller configured to control an execution of the control flow instructions on data stored in the array.

Abstract: The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry is configured to perform a logical operation using a data value stored in a first memory cell coupled to a sense line as a first input and a data value stored in a second memory cell coupled to the sense line as a second input. The sensing circuitry is configured to perform the logical operation without transferring data via a sense line address access.

Abstract: One example of the present disclosure includes performing a comparison operation in memory using a logical representation of a first value stored in a first portion of a number of memory cells coupled to a sense line of a memory array and a logical representation of a second value stored in a second portion of the number of memory cells coupled to the sense line of the memory array. The comparison operation compares the first value to the second value, and the method can include storing a logical representation of a result of the comparison operation in a third portion of the number of memory cells coupled to the sense line of the memory array.

Abstract: Methods, systems, and devices for modifiable repair solutions for a memory array are described to support storing repair information for a memory array within the memory array itself. A memory device may include the memory array and an on-die microprocessor, where the microprocessor may retrieve the repair information from the memory array and write the repair information to repair circuitry used for identifying defective memory addresses. The microprocessor may support techniques for identifying additional defects and updating the repair information during operation of the memory array. For example, the microprocessor may identify additional defects based on errors associated with one or more memory cells of the memory array or based on testing performed on one or more memory cells of the memory array. In some cases, a host device may identify additional defects and may notify the microprocessor of the additional defects.

Abstract: The present disclosure includes systems, apparatuses and methods related to maintaining data in a sorted order in a memory array to improve access time to data in the memory array and directing access to a row of data in cache based upon an address associated with the data. In a number of embodiments, data stored in tables in sorted order can allow access to data based on upon the keys and/or the sorted order of the data, which can increase access times to data the memory array.

Abstract: Methods, systems, and devices for operational code storage for an on-die microprocessor are described. A microprocessor may be formed on-die with a memory array. Operating code for the microprocessor may be stored in the memory array, possibly along with other data (e.g., tracking or statistical data) used or generated by the on-die microprocessor. A wear leveling algorithm may result in some number of rows within the memory array not being used to store user data at any given time, and these rows may be used to store the operating code and possibly other data for the on-die microprocessor. The on-die microprocessor may boot and run based on the operating code stored in memory array.

Abstract: Methods, apparatuses, and systems related to mapping a virtual address using a content addressable memory (CAM) are described. In a memory system including a memory and a content addressable memory (CAM), a select line of the CAM can be coupled to a corresponding select line of the memory, which allows the memory system to map a virtual address of a memory device directly to the corresponding select line of the memory. An example method can include receiving, from a host at a memory device comprising a memory array and a content addressable memory (CAM), a first virtual address to be searched among virtual addresses stored within the CAM, identifying, in response to receipt of the first virtual address, a select line of a plurality of select lines of the CAM associated with a second virtual address matching the first virtual address, and activating, in response to identifying the select line of the CAM, a corresponding select line of the memory coupled to the identified select line of the CAM.

Abstract: The present disclosure includes systems, apparatuses and methods related to maintaining data in a sorted order in a memory array to improve access time to data in the memory array and directing access to a row of data in cache based upon an address associated with the data. In a number of embodiments, a number of keys that are stored in a first row of an index table can be split between the first row and a second row in response to the first row being full, where the number of keys are copied to the second row and a first portion of the number of keys remain in the first row and a second portion of the number of keys are moved to the second row.

Abstract: Apparatuses, systems, and methods for mapping a virtual address using a CAM are described. A parallel structure of a CAM can enable functions of a MMU to be integrated into a single operation performed using the CAM such that a virtual address of a memory array can be mapped directly to a row of a memory. An example method includes receiving an access command and address information for a memory array; identifying a virtual address and a physical address of the memory array based on the received address information; comparing, during a time period associated with the access command, the virtual address and the physical address to virtual addresses and physical addresses, respectively, of the memory array stored in a CAM; and accessing, during the time period, a row of the memory array coupled to a row of the CAM storing the virtual address and the physical address.

Abstract: Methods, apparatuses, and systems related to mapping a virtual address using a physical address are described. In a memory system including a memory (e.g., cache) and a content addressable memory (CAM), the CAM can be configured to search data requested by a host from the memory based on multiple indicators stored in the CAM. For example, in the event that the data stored in the memory is not searchable based on a particular indicator such as a virtual address of a memory array (e.g., main memory), the CAM be configured to search the data based on another indicator such as a physical address of the memory array. Searching the data based on multiple indicators can resolve a synonym problem.

Abstract: The present disclosure includes systems, apparatuses and methods related to maintaining data in a sorted order in a memory array to improve access time to data in the memory array and directing access to a row of data in cache based upon an address associated with the data. In a number of embodiments, data can be sorted by receiving a portion of data for storage in a memory device, extracting a key associated with the portion of data, determining a row of an index table to store the key, and placing the key along with a number of keys in the row of the index table in a sorted order, wherein the sorted order is in relation to keys associated with portions of data previously stored in the memory device.

Abstract: The present disclosure includes apparatuses and methods for parallel writing to multiple memory device locations. An example apparatus comprises a memory device. The memory device includes an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component configured to implement logical operations. A memory controller in the memory device is configured to receive a block of resolved instructions and/or constant data from the host. The memory controller is configured to write the resolved instructions and/or constant data in parallel to a plurality of locations the memory device.