Abstract: A display device is provided. The display device includes a plurality of pixels. At least one of the pixels includes a semiconductor device having a light-emitting area, a first light conversion layer disposed on the semiconductor device and a first scattering layer disposed on the semiconductor device. The first scattering layer is disposed on the first light conversion layer.

Abstract: A semiconductor device includes a first display unit and a second display unit. The first display unit includes a first substrate, first light-emitting units, and a first gate driver circuit. The first substrate includes a first display region. The first substrate has a first side and a second side. The first light-emitting units are disposed in the first display region. The first gate driver circuit is disposed in the first display region. The second display unit is adjacent to the first display unit. The second display unit includes a second substrate. The second substrate includes a second display region, second light-emitting units, and a second gate driver circuit. The second substrate has a third side and a fourth side. The second light-emitting units are disposed in the second display region. A second gate driver circuit is disposed in the second display region.

Abstract: A light emitting diode substrate includes a substrate, a plurality of first light emitting diode and second light emitting diode. The first light emitting diode are disposed on the substrate and arranged along a first direction and a second direction to form a first array. The first light emitting diode have a first side length extending along the first direction and a second side length extending along the second direction. The second light emitting diode are disposed on the substrate and arranged along the first direction and the second direction to form a second array. The second light emitting diode have a third side length extending along the first direction and a forth side length extending along the second direction. A first difference between the first side length and the third side length is less than a second difference between the second side length and the forth side length.

Abstract: A display device includes a substrate, a first transistor, a second transistor and a conductive connection portion disposed on the substrate. The first transistor is electrically connected to the gate electrode of the second transistor through the conductive connection portion. An insulating layer is disposed on the conductive connection portion. A pixel electrode is disposed on the insulating layer and is electrically connected to the second transistor. The pixel electrode is at least partially overlapped with the conductive connection portion. A light-emitting element is disposed on the pixel electrode. The conductive connection portion and the pixel electrode form a capacitor. The capacitor has an equivalent permittivity and a thickness. The ratio of the equivalent permittivity to the thickness is in a range from 0.4*(1E+5)F/m^2 to 296.48*(1E+5)F/m^2.

Abstract: The disclosure provides a display apparatus. The display apparatus of the disclosure includes a substrate having a plurality of pixel regions, a plurality of active elements, a plurality of first signal lines and second signal lines, a plurality of ground signal lines and a plurality of light emitting diodes (LEDs). The plurality of ground signal lines are disposed on the substrate and arranged to alternate with the first signal lines. At least one LED has first and second electrodes. The first electrode of at least one LED is electrically connected with a corresponding active element. A second electrode of at least one LED is electrically connected with a corresponding ground signal line. At least two LEDs disposed in an identical pixel region is electrically connected with an identical ground signal line between two first signal lines adjacent to each other. The display apparatus of the disclosure has high resolution.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0?|?T1T2A(T)dT??T1T3E(T)dT|<0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A display device is provided. The display device includes a plurality of pixels. One of the pixels includes a color conversion layer. The pixel also includes a dielectric layer disposed on the color conversion layer. The refractive index of the dielectric layer is less than the refractive index of the color conversion layer.

Abstract: A display device is provided. The display device includes a first substrate, a first light-emitting element, a second substrate, a light conversion layer and a light filter layer. The first light-emitting element is disposed on the first substrate. The second substrate is opposite to the first substrate. The light conversion layer is disposed on the second substrate and corresponds to the first light-emitting element. The light filter layer is disposed on the second substrate, wherein the transmittance of the light filter layer is lower than or equal to 1% for light with a wavelength shorter than 430 nm.

Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.

Abstract: A display device is provided. The display device includes a substrate, and a light-emitting unit disposed on the substrate. The light-emitting unit includes a first conductive layer overlapping a second conductive layer, a first semiconductor layer disposed between the first conductive layer and the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the first conductive layer, a quantum well structure disposed between the first semiconductor layer and the second semiconductor layer, and a via hole penetrated through the first semiconductor layer and the quantum well structure. The second conductive layer is electrically connected with the second semiconductor layer through a conductive material disposed in the via hole.

Abstract: A display device includes a substrate, a first electrode, a second electrode, and a protective layer. The first electrode is disposed on the substrate. The second electrode has a first segment and a second segment. The first segment is located at a first side of the first electrode. The second segment is located at a second side of the first electrode. The second side is opposite to the first side. The protective layer overlaps the first segment and the second segment. The first segment has a length which is shorter than that of the second segment. The display device further includes a light-emitting element disposed on the substrate.

Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 ?m and less than or equal to 5 ?m.

Abstract: A display device is provided. The display device includes a first substrate having a light-emitting region and a first transparent region. The first substrate includes a plurality of transistors and at least one light-emitting diode disposed in the light-emitting region. The light-emitting diode includes a first electrode electrically connected to the corresponding transistor and a first semiconductor layer disposed over the first electrode. The light-emitting diode also includes a second semiconductor layer disposed over the first semiconductor layer and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, wherein the distance between the top surface of the first electrode and the top surface of the second semiconductor layer is between 2 ?m and 12 ?m.

Abstract: A display apparatus includes an array substrate, a light emitting element, and a light shielding layer. The light emitting element is disposed on the array substrate and includes a first upper surface. The light shielding layer is disposed on a periphery of the light emitting element and includes a second upper surface. A distance between the first upper surface and the second upper surface in a direction perpendicular to the array substrate is between 0 and 5 ?m.

Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.

Abstract: A display device is provided. The display device includes a thin-film transistor substrate, a conductive pad disposed on the thin-film transistor substrate, and an adhesion film disposed on the conductive pad. The adhesion film includes a plurality of conductive particles. The display device also includes a light-emitting component disposed on the adhesion film. The light-emitting component includes a connection feature. The display device also includes a protection layer partially surrounding the light-emitting component. The connection feature of the light-emitting component has a lower portion not surrounded by the protection layer. The adhesion film has a thickness of T, one of the plurality of conductive particles has a diameter of d, the lower portion of the connection feature has a thickness of t, and 0<t?T?d.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a first semiconductor structure having an upper surface and a lower surface; a second semiconductor layer disposed adjacent to the upper surface; a third semiconductor layer disposed adjacent to the lower surface; two light-emitting layers disposed between the upper surface and the second semiconductor layer and disposed between the lower surface and the third semiconductor layer, respectively; a first electrode disposed over the second semiconductor layer; and a second electrode disposed over the third semiconductor layer.

Abstract: A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

Abstract: A display device is provided. The display device includes a first substrate, a display unit, a second substrate, and a light shielding structure. The display unit is disposed on the first substrate and includes at least one light emitting diode chip. The light shielding structure surrounds the light emitting diode chip of the display units and is located between the first substrate and the second substrate.