Patents by Inventor Tsiao-Chen Wu
Tsiao-Chen Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11921430Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.Type: GrantFiled: July 25, 2022Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Tsiao-Chen Wu, Chi-Ming Yang, Hsu-Shui Liu
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Publication number: 20230229072Abstract: The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.Type: ApplicationFiled: March 22, 2023Publication date: July 20, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsiao-Chen WU, Pei-Cheng HSU
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Patent number: 11630386Abstract: The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.Type: GrantFiled: January 19, 2022Date of Patent: April 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsiao-Chen Wu, Pei-Cheng Hsu
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Publication number: 20220357671Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.Type: ApplicationFiled: July 25, 2022Publication date: November 10, 2022Inventors: Tsiao-Chen WU, Chi-Ming YANG, Hsu-Shui LIU
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Patent number: 11402761Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.Type: GrantFiled: March 2, 2021Date of Patent: August 2, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Tsiao-Chen Wu, Chi-Ming Yang, Hsu-Shui Liu
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Publication number: 20220146924Abstract: The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.Type: ApplicationFiled: January 19, 2022Publication date: May 12, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsiao-Chen WU, Pei-Cheng HSU
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Patent number: 11243461Abstract: A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.Type: GrantFiled: October 17, 2019Date of Patent: February 8, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsiao-Chen Wu, Pei-Cheng Hsu
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Patent number: 11199767Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.Type: GrantFiled: December 13, 2019Date of Patent: December 14, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chung-Chieh Lee, Feng Yuan Hsu, Chyi Shyuan Chern, Chi-Ming Yang, Tsiao-Chen Wu, Chun-Lin Chang
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Publication number: 20210364930Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.Type: ApplicationFiled: March 2, 2021Publication date: November 25, 2021Inventors: Tsiao-Chen Wu, Chi-Ming Yang, Hsu-Shui Liu
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Publication number: 20200133113Abstract: A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.Type: ApplicationFiled: October 17, 2019Publication date: April 30, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsiao-Chen WU, Pei-Cheng HSU
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Publication number: 20200117076Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.Type: ApplicationFiled: December 13, 2019Publication date: April 16, 2020Inventors: CHUNG-CHIEH LEE, FENG YUAN HSU, CHYI SHYUAN CHERN, CHI-MING YANG, TSIAO-CHEN WU, CHUN-LIN CHANG
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Patent number: 10509311Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.Type: GrantFiled: May 29, 2018Date of Patent: December 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chung-Chieh Lee, Feng Yuan Hsu, Chyi Shyuan Chern, Chi-Ming Yang, Tsiao-Chen Wu, Chun-Lin Chang
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Publication number: 20190369481Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.Type: ApplicationFiled: May 29, 2018Publication date: December 5, 2019Inventors: CHUNG-CHIEH LEE, FENG YUAN HSU, CHYI SHYUAN CHERN, CHI-MING YANG, TSIAO-CHEN WU, CHUN-LIN CHANG
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Patent number: 10310380Abstract: A method for generating high-brightness light sources is provided. The method includes introducing a gaseous material into the target material. The method further includes supplying the target material into a fuel target generator. The method also includes generating targets by forcing the target material with the gaseous material out of the fuel target generator. In addition, the method includes expanding the gaseous material in the targets to transform the targets to target mists. The method also includes focusing a main pulse laser on the target mists to generate plasma emitting high-brightness light.Type: GrantFiled: June 26, 2017Date of Patent: June 4, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsiao-Chen Wu, Chun-Lin Louis Chang
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Patent number: 10162276Abstract: The present disclosure provides an apparatus. The apparatus comprises a field generator, configured to produce a field shield protecting a reticle from foreign particles.Type: GrantFiled: April 7, 2016Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Hao Cheng, Chue-San Yoo, Tsiao-Chen Wu
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Publication number: 20180157179Abstract: A method for generating high-brightness light sources is provided. The method includes introducing a gaseous material into the target material. The method further includes supplying the target material into a fuel target generator. The method also includes generating targets by forcing the target material with the gaseous material out of the fuel target generator. In addition, the method includes expanding the gaseous material in the targets to transform the targets to target mists. The method also includes focusing a main pulse laser on the target mists to generate plasma emitting high-brightness light.Type: ApplicationFiled: June 26, 2017Publication date: June 7, 2018Inventors: Tsiao-Chen WU, Chun-Lin Louis CHANG
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Patent number: 9864270Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.Type: GrantFiled: January 15, 2016Date of Patent: January 9, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jeng-Shin Ma, Tsiao-Chen Wu, Chi-Ming Yang, Chyi Shyuan Chern, Chih-Cheng Lin, Yun-Yue Lin
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Patent number: 9847302Abstract: Hydroxyl moieties are formed on a surface over a semiconductor substrate. The surfaces are silylized to replace the hydroxyl groups with silyl ether groups, the silyl ether groups being of the form: —OSiR1R2R3, where R1, R2, and R3 are each hydrocarbyl groups comprising at least one carbon atom. Silylation protects the wafers from forming defects through hydrolysis while the wafers are being transported or stored under ambient conditions.Type: GrantFiled: August 23, 2013Date of Patent: December 19, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsiao-Chen Wu, Fang Lin
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Publication number: 20170205705Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.Type: ApplicationFiled: January 15, 2016Publication date: July 20, 2017Inventors: Jeng-Shin Ma, Tsiao-Chen Wu, Chi-Ming Yang, Chyi Shyuan Chern, Chih-Cheng Lin, Yun-Yue Lin
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Publication number: 20170199471Abstract: The present disclosure provides an apparatus. The apparatus comprises a field generator, configured to produce a field shield protecting a reticle from foreign particles.Type: ApplicationFiled: April 7, 2016Publication date: July 13, 2017Inventors: WEN-HAO CHENG, CHUE-SAN YOO, TSIAO-CHEN WU