Abstract: Hydroxyl moieties are formed on a surface over a semiconductor substrate. The surfaces are silylized to replace the hydroxyl groups with silyl ether groups, the silyl ether groups being of the form: —OSiR1R2R3, where R1, R2, and R3 are each hydrocarbyl groups comprising at least one carbon atom. Silylation protects the wafers from forming defects through hydrolysis while the wafers are being transported or stored under ambient conditions.

Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

Abstract: The present disclosure provides an apparatus. The apparatus comprises a field generator, configured to produce a field shield protecting a reticle from foreign particles.

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.

Abstract: Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.

Abstract: A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

Abstract: Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.

Abstract: Provided is a photoresist that includes a polymer is free of a aromatic group and a photo acid generator (PAG) that has less than three aromatic groups. In an embodiment, the PAG includes an anion component and a cation component. The anion component has one of the following chemical formulas: R31C—CR21—CR21—CR21—SO3? R31C—CR21—CR21—SO3? R31C—CR21—SO3? R31C—SO3? The cation component has one of the following chemical formulas: Wherein R1 and R2 each represent a chemical compound.

Abstract: A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

Abstract: A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

Abstract: A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.

Abstract: A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.

Abstract: A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

Abstract: A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.

Abstract: A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, the second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer.

Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.

Abstract: Provided is a photoresist that includes a polymer is free of a aromatic group and a photo acid generator (PAG) that has less than three aromatic groups. In an embodiment, the PAG includes an anion component and a cation component. The anion component has one of the following chemical formulas: R31C—CR21—CR21—CR21—SO3? R31C—CR21—CR21—SO3? R31C—CR21—SO3? R31C—SO3? The cation component has one of the following chemical formulas: Wherein R1 and R2 each represent a chemical compound.

Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.