Patents by Inventor Tsun-Kai Ko

Tsun-Kai Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9876153
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a metal bump, and a reflective insulation layer. The light-emitting diode includes an active layer, an insulation layer formed on the active layer and having a side surface, and a pad electrically connected to the active layer. The metal bump is formed on the pad. The reflective insulation layer covers the side surface.
    Type: Grant
    Filed: December 23, 2015
    Date of Patent: January 23, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Jai-Tai Kuo, Min-Hsun Hsieh, Lung-Kuan Lai, Wei-Kang Cheng, Chien-Liang Liu, Yih-Hua Renn, Shou-Lung Chen, Tsun-Kai Ko, Chi-Chih Pu
  • Patent number: 9859467
    Abstract: An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: January 2, 2018
    Assignee: Epistar Corporation
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Chien-Chih Liao, Tzu-Yao Tseng, Tsun-Kai Ko, Chien-Fu Shen
  • Publication number: 20170365741
    Abstract: A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.
    Type: Application
    Filed: August 31, 2017
    Publication date: December 21, 2017
    Inventors: Chien-Kai CHUNG, Po-Shun CHIU, Hsin-Ying WANG, De-Shan KUO, Tsun-Kai KO, Yu-Ting HUANG
  • Patent number: 9847460
    Abstract: A light-emitting device includes a semiconductor light emitting stack; an electrode on the semiconductor light emitting stack, the electrode including a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer; and a plurality of pits between the bonding layer and the semiconductor light emitting stack, wherein one of the plurality of pits is not filled up by the adhesion layer.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: December 19, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Teng Ko, De-Shan Kuo, Chien-Kai Chung, Tsun-Kai Ko
  • Publication number: 20170263674
    Abstract: A light-emitting structure, comprising: a first light-emitting structure unit and a second light-emitting structure unit, adjacent to and spaced apart from each other; and an electrical connection arranged on the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light emitting structure unit; wherein the first light-emitting structure unit comprises a first side surface and a second side surface; wherein the first side surface is between the first and the second light-emitting structure units, and the second side surface is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the first side surface is inclined and a slope of the first side surface is gentler than a slope of the second side surface.
    Type: Application
    Filed: May 25, 2017
    Publication date: September 14, 2017
    Inventors: Jhih-Yong YANG, Hui-chun YEH, Chien-Fu SHEN, Tsun-Kai KO
  • Patent number: 9755109
    Abstract: A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: September 5, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Kai Chung, Po-Shun Chiu, Hsin-Ying Wang, De-Shan Kuo, Tsun-Kai Ko, Yu-Ting Huang
  • Publication number: 20170141260
    Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
    Type: Application
    Filed: November 14, 2016
    Publication date: May 18, 2017
    Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
  • Patent number: 9601674
    Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: March 21, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Publication number: 20170077350
    Abstract: A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.
    Type: Application
    Filed: November 3, 2016
    Publication date: March 16, 2017
    Inventors: HSIN-YING WANG, DE-SHAN KUO, WEN-HUNG CHUANG, TSUN-KAI KO, CHIA-CHEN TSAI, CHYI-YANG SHEU, CHUN-CHANG CHEN
  • Publication number: 20170047494
    Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.
    Type: Application
    Filed: August 13, 2015
    Publication date: February 16, 2017
    Applicant: EPISTAR CORPORATION
    Inventors: Hui-Chun YEH, Chien-Fu SHEN, Tsun-Kai KO
  • Publication number: 20170018684
    Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.
    Type: Application
    Filed: September 28, 2016
    Publication date: January 19, 2017
    Inventors: Schang-Jing HON, Chao-Hsing CHEN, Tsun-Kai KO, Chien-Fu SHEN, Jia-Kuen WANG, Hung-Che CHEN
  • Patent number: D777693
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: January 31, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chao Hsing Chen, Tsung Hsun Chiang, Chien Chih Liao, Wen Hung Chuang, Min Yen Tsai, Bo Jiun Hu, Tzu Yao Tseng, Jia Kuen Wang, Tsun Kai Ko, Chien Fu Shen, Kuan Yi Lee
  • Patent number: D781254
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: March 14, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D782426
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: March 28, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D782427
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: March 28, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D790488
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: June 27, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D795206
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: August 22, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D797064
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: September 12, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D797065
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: September 12, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D797689
    Type: Grant
    Filed: August 24, 2016
    Date of Patent: September 19, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko