Patents by Inventor Tsun-Kai Ko

Tsun-Kai Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160372635
    Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in th
    Type: Application
    Filed: September 2, 2016
    Publication date: December 22, 2016
    Inventors: Tsun-Kai KO, Schang-Jing HON, Chien-Kai CHUNG, Hui-Chun YEH, An-Ju LIN, Chien-Fu SHEN, Chen OU
  • Patent number: 9525104
    Abstract: This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlxGa1-xN (0<x<1) and the second sub-layer has a surface comprising a structure of irregularly distributed holes.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: December 20, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Yao Lin, Tsun-Kai Ko, Chien-Yuan Tseng, Yen-Chih Chen, Chun-Ta Yu, Shih-Chun Ling, Cheng-Hsiung Yen, Hsin-Hsien Wu
  • Patent number: 9508902
    Abstract: An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: November 29, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chun Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
  • Patent number: 9508901
    Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: November 29, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Juin-Yang Chen, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko, Chun-Teng Ko
  • Publication number: 20160343909
    Abstract: A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.
    Type: Application
    Filed: August 4, 2016
    Publication date: November 24, 2016
    Inventors: Chien-Kai CHUNG, Po-Shun CHIU, Hsin-Ying WANG, De-Shan KUO, Tsun-Kai KO, Yu-Ting HUANG
  • Patent number: 9502615
    Abstract: A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: November 22, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Ying Wang, De-Shan Kuo, Wen-Hung Chuang, Tsun-Kai Ko, Chia-Chen Tsai, Chyi-Yang Sheu, Chun-Chang Chen
  • Publication number: 20160307961
    Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, conformably formed on the trench and covering the bottom portion and sidewalls of the first and the second light-emitting units; and an electrical connection, formed on the insulating layer and electrically connecting the first and the second light-emitting units. The electrical connection includes a bridging portion covering the trench and a joining portion extending from the bridging portion and formed on the first and the second light-emitting units; wherein the bridging portion is wider than the joining portion; wherein a part of the insulating layer is formed under the joining portion.
    Type: Application
    Filed: June 29, 2016
    Publication date: October 20, 2016
    Inventors: Chien-Fu SHEN, Chao-Hsing CHEN, Tsun-Kai KO, Schang-Jing HON, Sheng-Jie HSU, De-Shan KUO, Hsin-Ying WANG, Chiu-Lin YAO, Chien-Fu HUANG, Hsin-Mao LIU, Chien-Kai CHUNG
  • Patent number: 9461208
    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: October 4, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
  • Patent number: 9437780
    Abstract: An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: September 6, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chen Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
  • Patent number: 9412906
    Abstract: A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: August 9, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Kai Chung, Po-Shun Chiu, Hsin-Ying Wang, De-Shan Kuo, Tsun-Kai Ko, Yu-Ting Huang
  • Patent number: 9406719
    Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit, comprising a bottom portion exposing the substrate; an insulating layer arranged on the trench, conformably covering the bottom portion and sidewalls of the first unit and the second unit; and an electrical connection, conformably covering the insulating layer, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion covers the trench, and the joining portion covers the first unit and the second unit.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: August 2, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Fu Shen, Chao-Hsing Chen, Tsun-Kai Ko, Schang-Jing Hon, Sheng-Jie Hsu, De-Shan Kuo, Hsin-Ying Wang, Chiu-Lin Yao, Chien-Fu Huang, Hsin-Mao Liu, Chien-Kai Chung
  • Publication number: 20160197241
    Abstract: A light-emitting device includes a semiconductor light emitting stack; an electrode on the semiconductor light emitting stack, the electrode including a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer; and a plurality of pits between the bonding layer and the semiconductor light emitting stack, wherein one of the plurality of pits is not filled up by the adhesion layer.
    Type: Application
    Filed: March 16, 2016
    Publication date: July 7, 2016
    Inventors: Chun-Teng KO, De-Shan KUO, Chien-Kai CHUNG, Tsun-Kai KO
  • Patent number: 9385108
    Abstract: The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: July 5, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chein-Fu Shen, Schang-Jing Hon, Tsun-Kai Ko, Alexander Chan Wang, Min-Hsun Hsieh, Cheng Nan Han
  • Patent number: D764422
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: August 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
  • Patent number: D769199
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: October 18, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chao Hsing Chen, Tsung Hsun Chiang, Chien Chih Liao, Wen Hung Chuang, Bo Jiun Hu, Tzu Yao Tseng, Jia Kuen Wang, Tsun Kai Ko, Chien Fu Shen, Kuan Yi Lee, Min Yen Tsai
  • Patent number: D770397
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: November 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Ying Wang, Chien-Kai Chung, Yu-Ting Huang, Tsun-Kai Ko
  • Patent number: D770399
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: November 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D770400
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: November 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D771578
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: November 15, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Ying Wang, De-Shan Kuo, Wen-Hung Chuang, Tsun-Kai Ko
  • Patent number: D773410
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: December 6, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko