Abstract: A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0?x<0.25), subjecting the first layer to a first heat treatment wherein the first layer is heated for 1 msec or less at a temperature higher than 1100° C., forming a second layer on the first layer, the second layer containing a second p-type impurity and formed of amorphous silicon or polycrystalline silicon, the second p-type impurity having a smaller covalent bond radius than that of the first p-type impurity, and subjecting the second layer to a second heat treatment to heat the second layer at a temperature ranging from 800° C. to 1100° C.

Abstract: A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

Abstract: A nonvolatile semiconductor memory device includes: a source region and a drain region formed at a distance from each other in a semiconductor substrate; a tunnel insulating film formed on the semiconductor substrate between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a first alumina layer formed on the charge storage film, and having a first impurity element added thereto, the first impurity element having an octacoordinate ion radius of 63 pm or greater, the first impurity element having a concentration distribution in a layer thickness direction of the first alumina layer that becomes the largest in a region close to the side of the charge storage film; a second alumina layer formed on the first alumina layer, and not having the first impurity element added thereto; and a control gate electrode formed on the second alumina layer.

Abstract: It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

Abstract: A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0?x<0.25), subjecting the first layer to a first heat treatment wherein the first layer is heated for 1 msec or less at a temperature higher than 1100° C., forming a second layer on the first layer, the second layer containing a second p-type impurity and formed of amorphous silicon or polycrystalline silicon, the second p-type impurity having a smaller covalent bond radius than that of the first p-type impurity, and subjecting the second layer to a second heat treatment to heat the second layer at a temperature ranging from 800° C. to 1100° C.

Abstract: The present invention provides a non-volatile switching element having a novel structure that operates at a high speed and enables high integration, and an integrated circuit that includes such non-volatile switching elements. The switching element includes: a switching film formed on a substrate, made of a material causing a 10 times or greater change in electric resistance with a temperature change within a range of ±80 K from a predetermined temperature; a Peltier element causing the switching film to have the temperature change; a heat conducting/electric insulating film provided between the switching film and the Peltier element, to conduct heat from the Peltier element; and a pair of electrodes connected to the switching film.

Abstract: In a semiconductor device, the side walls are made of SiO2, SiN or SiON, and the top insulating film or gate insulating film is made of an oxide including Al, Si, and metal element M so that the number ratio Si/M is set to no less than a number ratio Si/M at a solid solubility limit of SiO2 composition in a composite oxide including metal element M and Al and set to no more than a number ratio Si/M at the condition that the dielectric constant is equal to the dielectric constant of Al2O3 and so that the number ratio Al/M is set to no less than a number ratio Al/M where the crystallization of an oxide of said metal element M is suppressed due to the Al element and set to no more than a number ratio Al/M where the crystallization of the Al2O3 is suppressed due to the metal element M.

Abstract: A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.

Abstract: It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

Abstract: It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

Abstract: It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

Abstract: A nonvolatile semiconductor memory device includes a source region and a drain region spaced from each other in a surface of a semiconductor layer, a tunnel insulating film provided on the semiconductor layer between the source region and the drain region, a charge storage film provided on the tunnel insulating film, a block insulating film provided on the charge storage film, and a control gate electrode provided on the block insulating film. The block insulating film is made of (Rm1?xLnx)2?yAlyO3+?, where Ln is one or more selected from Pr, Tb, Ce, Yb, Eu, and Sm, Rm is one or more selected from La, Nd, Gd, Dy, Ho, Er, Tm, Lu, Y, and Sc, 0<x<0.167 (but 0<x<0.333 if Ln is Pr, and 0<x<0.292 if Ln is Tb), 0.95?y?1.20, and 0???x(2?y)/2 (but ?x(2?y)/2???0 if Ln is Yb, Eu, and Sm, 0???x(2?y)/3 if Ln is Pr, and 0???3x(2?y)/14 if Ln is Tb).

Abstract: It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

Abstract: A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.

Abstract: Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.

Abstract: A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0?x<0.25), subjecting the first layer to a first heat treatment wherein the first layer is heated for 1 msec or less at a temperature higher than 1100° C., forming a second layer on the first layer, the second layer containing a second p-type impurity and formed of amorphous silicon or polycrystalline silicon, the second p-type impurity having a smaller covalent bond radius than that of the first p-type impurity, and subjecting the second layer to a second heat treatment to heat the second layer at a temperature ranging from 800° C. to 1100° C.

Abstract: A nonvolatile semiconductor memory device includes: a source region and a drain region formed at a distance from each other in a semiconductor substrate; a tunnel insulating film formed on the semiconductor substrate between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a first alumina layer formed on the charge storage film, and having a first impurity element added thereto, the first impurity element having an octacoordinate ion radius of 63 pm or greater, the first impurity element having a concentration distribution in a layer thickness direction of the first alumina layer that becomes the largest in a region close to the side of the charge storage film; a second alumina layer formed on the first alumina layer, and not having the first impurity element added thereto; and a control gate electrode formed on the second alumina layer.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: It is made possible to provide a semiconductor device and a method for manufacturing the semiconductor device that have the highest possible permittivity and can be produced at low production costs. A method for manufacturing a semiconductor device, includes: forming an amorphous film containing (HfzZr1-z)xSi1-xO2-y (0.81?x?0.99, 0.04?y?0.25, 0?z?1) on a semiconductor substrate, the ranges of composition ratios x, y, and z being values measured by XPS; and transforming the amorphous film into an insulating film containing (HfzZr1-z)xSi1-xO2 as tetragonal crystals, by performing annealing at 750° C. or higher on the amorphous film in an atmosphere containing oxygen.