Abstract: A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive.

Abstract: In a method for manufacturing a semiconductor device, a first dielectric layer is formed over an underlying structure disposed on a substrate. A planarization resistance layer is formed over the first dielectric layer. A second dielectric layer is formed over the first dielectric layer and the planarization resistance layer. A planarization operation is performed on the second dielectric layer, the planarization resistance layer and the first dielectric layer. The planarization resistance film is made of a material different from the first dielectric layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip has a plurality of gate structures arranged over a substrate. A plurality of first MOL (middle-of-line) structures are arranged at a first pitch over the substrate at locations interleaved between the plurality of gate structures. The plurality of first MOL structures connect active regions within the substrate to an overlying metal interconnect layer. A plurality of second MOL structures are arranged at a second pitch over the plurality of gate structures at locations interleaved between the plurality of first MOL structures. The plurality of second MOL structures connect the plurality of gate structures to the metal interconnect layer. The second pitch is different than the first pitch. The different pitches avoid misalignment errors between the plurality of gate structures and the metal interconnect layer.

Abstract: A semiconductor device includes two elongated active regions that include source/drain regions for multiple transistor devices, a first contact layer that includes an electrical connection between the two active regions, a second contact layer that includes a connection between two gate lines, and a gate contact layer that provides connections to the gate lines.

Abstract: A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive.

Abstract: A post placement abutment treatment for cell row design is provided. In an embodiment a first cell and a second cell are placed in a first cell row and a third cell and a fourth cell are placed into a second cell row. After placement vias connecting power and ground rails to the underlying structures are analyzed to determine if any can be merged or else removed completely. By merging and removing the closely placed vias, the physical limitations of photolithography may be by-passed, allowing for smaller structures to be formed.

Abstract: A semiconductor device includes a substrate having an active area, a gate structure over the active area, a lower conductive layer over and electrically coupled to the active area, and an upper conductive layer over and electrically coupled to the lower conductive layer. The lower conductive layer is at least partially co-elevational with the gate structure. The lower conductive layer includes first and second conductive segments spaced from each other. The upper conductive layer includes a third conductive segment overlapping the first and second conductive segments. The third conductive segment is electrically coupled to the first conductive segment, and electrically isolated from the second conductive segment.

Abstract: A post placement abutment treatment for cell row design is provided. In an embodiment a first cell and a second cell are placed in a first cell row and a third cell and a fourth cell are placed into a second cell row. After placement vias connecting power and ground rails to the underlying structures are analyzed to determine if any can be merged or else removed completely. By merging and removing the closely placed vias, the physical limitations of photolithography may be by-passed, allowing for smaller structures to be formed.

Abstract: In a method for manufacturing a semiconductor device, a first dielectric layer is formed over an underlying structure disposed on a substrate. A planarization resistance layer is formed over the first dielectric layer. A second dielectric layer is formed over the first dielectric layer and the planarization resistance layer. A planarization operation is performed on the second dielectric layer, the planarization resistance layer and the first dielectric layer. The planarization resistance film is made of a material different from the first dielectric layer.

Abstract: A method for ameliorating corner rounding effects in a photolithographic process is provided. A semiconductor workpiece having an active device region is provided, and a photoresist layer is formed over the semiconductor workpiece. A mask is provided for patterning for the photoresist layer, wherein the mask comprises pattern having a sharp corner associated with the active device region. The sharp corner is separated from the active device region by a first distance in a first direction and a second distance in a second direction, wherein the first distance meets a minimum criteria for the photolithographic process, and wherein the second distance is greater than the first distance. The photoresist layer is then exposed to a radiation source, and the radiation source patterns the photoresist layer through the mask, defining an exposure region on the semiconductor workpiece having a rounded corner associated with the sharp corner.

Abstract: Among other things, one or more systems and techniques for defining one or more implant regions or for doping a semiconductor arrangement are provided. A first implant region is defined based upon a first implant mask overlaying a first active region of a semiconductor arrangement. A second implant region is defined based upon the first implant mask and a second implant mask overlaying a second active region of the semiconductor arrangement. A third implant region is defined based upon the second implant mask overlaying a third active region of the semiconductor arrangement. One or more doping processes are performed through the first implant mask and the second implant mask to dope the semiconductor arrangement. Because the first implant mask and the second implant mask overlap the second active region, doping area coverage is improved thus mitigating undesirable voltage threshold variations otherwise resulting from inadequate doping area coverage.

Abstract: A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive.

Abstract: A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode comprises a portion over an active region of the substrate, and a portion over an isolation feature of the substrate ending at an end cap. A vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region.

Abstract: A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive.

Abstract: A semiconductor device includes two elongated active regions that include source/drain regions for multiple transistor devices, a first contact layer that includes an electrical connection between the two active regions, a second contact layer that includes a connection between two gate lines, and a gate contact layer that provides connections to the gate lines.

Abstract: A semiconductor device includes an inter-layer dielectric (ILD) layer over a substrate; and a first gate feature in the ILD layer, the first gate feature comprising a first gate material and having a first resistance, wherein the first gate material comprises a first conductive material. The semiconductor device further includes a second gate feature in the ILD layer, the second gate feature comprising a second gate material and having a second resistance higher than the first resistance, wherein the second material comprises at least 50% by volume silicon oxide.

Abstract: A method for mask optimization, the method including moving any features of a gate contact mask that are in violation of a spacing rule to a second layer contact mask, splitting an elongated feature of the second layer mask that is too close to a feature moved to the second layer mask from the gate contact mask, and connecting two split features of a first layer contact mask, the split features corresponding to the elongated feature of the second layer mask.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip has a plurality of gate structures arranged over a substrate. A plurality of first MOL (middle-of-line) structures are arranged at a first pitch over the substrate at locations interleaved between the plurality of gate structures. The plurality of first MOL structures connect active regions within the substrate to an overlying metal interconnect layer. A plurality of second MOL structures are arranged at a second pitch over the plurality of gate structures at locations interleaved between the plurality of first MOL structures. The plurality of second MOL structures connect the plurality of gate structures to the metal interconnect layer. The second pitch is different than the first pitch. The different pitches avoid misalignment errors between the plurality of gate structures and the metal interconnect layer.

Abstract: A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode comprises a portion over an active region of the substrate, and a portion over an isolation feature of the substrate ending at an end cap. A vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region.

Abstract: The present disclosure relates to a method of generating a scaled integrated chip design by scaling a FEOL and a BEOL of an original IC design at different scaling ratios, and an associated apparatus. In some embodiments, the method is performed by forming an original integrated chip (IC) design that is a graphical representation of an integrated chip. The original IC design has a front-end-of-the-line (FEOL) section, a back-end-of-the-line (BEOL) section, and a middle-of-the-line (MOL) section that is disposed between the FEOL and BEOL sections. A scaled integrated chip design is formed by scaling (i.e., shrinking) the FEOL section and the BEOL section of the original integrated chip design at different scaling ratios, and by scaling different design layers within the MOL section at different scaling ratios to avoid misalignment errors between the FEOL section and the BEOL section.