Abstract: A method for performing memory access management includes: with regard to a same Flash cell of a Flash memory, receiving a first digital value outputted by the Flash memory, requesting the Flash memory to output at least one second digital value, wherein the first digital value and the at least one second digital value are utilized for determining information of a same bit stored in the Flash cell, and a number of various possible states of the Flash cell correspond to a possible number of bit(s) stored in the Flash cell; based upon the second digital value, generating/obtaining soft information of the Flash cell, for use of performing soft decoding; and controlling the Flash memory to perform sensing operations by respectively utilizing a plurality of sensing voltages that are not all the same, in order to generate the first digital value and the second digital value.

Abstract: A data reading method is provided. The data reading method includes: utilizing a first sense voltage to read a data unit from a flash memory block; performing an error detection operation on the data unit and calculating an error polynomial according to a detection result; and determining whether the error polynomial conforms to a predetermined condition and deciding whether to perform read retry on the data unit according to a determining result.

Abstract: A memory controller includes a memory access circuit and an LDPC decoding circuit. The memory access circuit reads the hard information of a first code word and a second code word from a memory device. The LDPC decoding circuit decodes the first code word according to the hard information of the first code word. When the LDPC decoding circuit does not decode the first code word successfully, the LDPC decoding circuit configures the memory access circuit to read the soft information of the first code word and the second code word, and decodes the first code word and the second code word according to the soft information of the first code word and the second code word.

Abstract: A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.

Abstract: A method for controlling a message-passing algorithm (MPA) based decoding operation includes: gathering statistics data of syndromes obtained from executed iterations; and selectively adjusting a decoding operation in a next iteration to be executed according to the statistics data. A control apparatus for controlling an MPA based decoder includes an adjusting circuit and a detecting circuit. The detecting circuit is coupled to the adjusting circuit, and used for gathering statistics data of syndromes obtained from executed iterations, and selectively controlling the adjusting circuit to adjust a decoding operation in a next iteration to be executed according to the statistics data.

Abstract: A method for performing data shaping is provided. The method is applied to a controller of a Flash memory, where the Flash memory includes a plurality of blocks. The method includes: according to contents of data to be written into or read from the Flash memory, generating/recovering an input seed of at least one randomizer/derandomizer; and utilizing the randomizer/derandomizer to generate a random function according to the input seed, for use of adjusting a plurality of bits of the data bit by bit. An associated memory device and a controller thereof are also provided.

Abstract: A method for performing data shaping is applied to a controller of a Flash memory, where the Flash memory includes a plurality of blocks. The method includes: performing a program optimization operation according to original data and a plurality of shaping codes, in order to generate trace back information corresponding to a Trellis diagram and utilize the trace back information as side information; and dynamically selecting at least one shaping code from the shaping codes according to the side information to perform data shaping on the original data.

Abstract: A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.

Abstract: A method for performing data shaping is applied to a controller of a Flash memory, where the Flash memory includes a plurality of blocks. The method includes: performing a program optimization operation according to original data and a plurality of shaping codes, in order to generate trace back information corresponding to a Trellis diagram and utilize the trace back information as side information; and dynamically selecting at least one shaping code from the shaping codes according to the side information to perform data shaping on the original data.

Abstract: A method for enhancing error correction capability of a controller of a memory device without need to increase a basic error correction bit count of an Error Correction Code (ECC) engine includes: according to an error correction magnification factor, respectively obtaining a plurality of portions of data, where the portions are partial data to be encoded/decoded; and regarding the portions that are the partial data to be encoded/decoded, respectively performing encoding/decoding corresponding to the error correction magnification factor, in order to generate encoded/decoded data corresponding to a predetermined error correction bit count, where a ratio of the predetermined error correction bit count to the basic error correction bit count is equal to the error correction magnification factor. An associated memory device and the controller thereof are further provided.

Abstract: A controlling method utilized in a flash memory device includes: compressing first data received from a host to generate second data; generating record data according to the first data and the second data where the record data records error correct coding (ECC) control information at least; executing ECC protection upon specific data selected from the first and second data to generate third data; and writing the third data into the flash memory device.

Abstract: A device under test has a connection interface, a controller, and a functional block. The connection interface is used to receive a test pattern transmitted at a first clock rate and output a functional test result. The controller is used to sample the test pattern by using a second clock rate and accordingly generate a sampled test pattern, wherein the second clock rate is higher than the first clock rate. The functional block is used to perform a designated function upon the sampled test pattern and accordingly generate the functional test result.

Abstract: A refresh method for a flash memory includes at least the following steps: performing a write operation to store an input data into a storage space in the flash memory; checking reliability of the storage space with the input data already stored therein; and when the reliability of the storage space meets a predetermined criterion, performing a refresh operation upon the storage space based on the input data. For example, the write operation stores the input data into the storage space through an initial program operation and at least one reprogram operation following the initial program operation; and the refresh operation is an additional reprogram operation applied to the storage space for programming the input data recovered from the storage space into original storage locations in the storage space.

Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage. The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.

Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.

Abstract: The invention provides a flash memory apparatus. In one embodiment, the flash memory apparatus comprises a flash memory and a flash memory controller. The flash memory comprises a write circuit and a memory cell array comprising a plurality of memory cells, wherein the write circuit is coupled to the memory cell array to write data in the memory cells. The flash memory controller is coupled to the write circuit, obtains a total capacity and a used data amount of the flash memory, and directs the write circuit to perform data writing in a one-bit mode when a ratio of the user data amount to the total capacity is less than a first predetermined value.

Abstract: A method for managing data stored in a flash memory is provided, where the flash memory includes a plurality of blocks. The method includes: providing a program list, where the program list records information about programmed blocks of the plurality of blocks and sequence of write times of the programmed blocks; detecting quality of a first block of the plurality of blocks to generate a detecting result, where the first block is the programmed block that has an earliest write time; and determining whether to move contents of the first block to a blank block, and to delete the contents of the first block according to the detecting result.

Abstract: A method for reading data from a block of a flash memory is provided, where the block includes a plurality of pages and at least one parity page, each of the pages includes a plurality of sectors used for storing data and associated row parities, each of the sectors of the parity page is used to store a column parity. The method includes: reading data from a specific page of the pages; decoding the data of the specific page; and when a specific sector of the specific page fails to be decoded, sequentially reading all original data of the pages and the parity page, and performing error correction upon the specific sector according to at least a portion of the original data of the pages and the parity page corresponding to the specific sector.

Abstract: A method for reducing uncorrectable errors of a memory device regarding Error Correction Code (ECC) includes: performing majority vote according to data read at different times at a same address in order to generate majority vote data corresponding to the address; and checking whether the majority vote data has any uncorrectable error in order to determine whether to output the majority vote data as data of the address. For example, the method further includes: within the data read at different times at the same address, temporarily storing all of the data except for data of a last time into buffering regions/buffers, respectively, with the majority vote data being temporarily stored into a second buffering region/buffer to utilize a latest generated portion within the majority vote data to replace a latest retrieved portion within data in the second buffering region/buffer. An associated memory device and the controller thereof are further provided.

Abstract: A method for correcting data bit of at least a cell of a flash memory includes: determining a contributing factor of level distribution corresponding to an electric level of a first cell to generate a first determination result; and, correcting/modifying the data bit corresponding to the electric potential of the first cell according to the first determination result.