Abstract: A method for correcting data bit of at least a cell of a flash memory includes: determining a contributing factor of level distribution corresponding to an electric level of a first cell to generate a first determination result; and, correcting/modifying the data bit corresponding to the electric potential of the first cell according to the first determination result.

Abstract: A memory control method is used for controlling a flash memory. The flash memory includes a first memory element and a second memory element. The second memory element includes multiple blocks and each block includes multiple pages. In this method, original data are written to the first memory element. Input data are obtained by reading the original data from the first memory element. The input data includes multiple input data rows. The input data rows are divided into data groups. Each input data row corresponding to each data row is written to a corresponding data page on the second memory element. A parity row corresponding to each data group is written to a data page on the second memory element. The number of data rows for each data group is smaller than the number of each block in the second memory element.

Abstract: A method for performing memory access management includes: with regard to a same Flash cell of a Flash memory, receiving a first digital value outputted by the Flash memory, requesting the Flash memory to output at least one second digital value, wherein the first digital value and the at least one second digital value are utilized for determining information of a same bit stored in the Flash cell, and a number of various possible states of the Flash cell correspond to a possible number of bit(s) stored in the Flash cell; based upon the second digital value, generating/obtaining soft information of the Flash cell, for use of performing soft decoding; and controlling the Flash memory to perform sensing operations by respectively utilizing a plurality of sensing voltages that are not all the same, in order to generate the first digital value and the second digital value.

Abstract: A method for reducing uncorrectable errors of a memory device regarding Error Correction Code (ECC) includes: performing majority vote according to data read at different times at a same address in order to generate majority vote data corresponding to the address; and checking whether the majority vote data has any uncorrectable error in order to determine whether to output the majority vote data as data of the address. For example, the method further includes: within the data read at different times at the same address, temporarily storing all of the data except for data of a last time into buffering regions/buffers, respectively, with the majority vote data being temporarily stored into a second buffering region/buffer to utilize a latest generated portion within the majority vote data to replace a latest retrieved portion within data in the second buffering region/buffer. An associated memory device and the controller thereof are further provided.

Abstract: A method for enhancing error correction capability of a controller of a memory device without increasing an Error Correction Code (ECC) engine encoding/decoding bit count includes: regarding a plurality of rows of a data bit array, respectively calculating a plurality of first parity codes; regarding a plurality of sets of columns of the data bit array, respectively calculating a plurality of second parity codes, wherein each set of the sets includes two or more of the columns, and the sets do not overlap; and performing encoding/decoding corresponding to the first and the second parity codes. An associated memory device and the controller thereof are further provided.

Abstract: Configurable permutators in an LDPC decoder are provided. A partially-parallel architecture combined with the proposed permutators is used to mitigate the increase in implementation complexity for the multi-mode function. To overcome the difficulty in efficient implementation of a high-throughput decoder, the variable nodes are partitioned into several groups, and each group is processed sequentially in order to shorten the critical-path delay and, hence, increase the maximum operating frequency. In addition, shuffled message-passing decoding can be adopted in decoders according to the invention to increase the convergence speed, which reduces the number of iterations required to achieve a given bit-error-rate performance.

Abstract: An exemplary method for reading data stored in a flash memory. The method comprises: controlling the flash memory to perform a first read operation upon the memory cell with a first threshold voltage to obtain a first binary digit for representing a bit of the N bits data; performing an error correction hard decode according to the first binary digit; controlling the flash memory to perform a second read operation upon the memory cell with a second threshold voltage to obtain a second binary digit for representing the bit of the N bits data, if the error correction hard decode indicates an uncorrectable result; and performing an error correction soft decode according to the first binary digit and the second binary digit.

Abstract: An exemplary method for accessing a flash memory. The method comprising obtaining a first random sequence; utilizing the first random sequence as a first seed for generating a second random sequence, wherein the first random sequence is not equivalent to the second random sequence; scrambling data according to the second random sequence for generating scrambled data; performing an error correction encoding operation upon the first random sequence and the scrambled data for generating parity check code; and storing the scrambled data and the parity check code to the flash memory.

Abstract: An exemplary method for reading data stored in a flash memory. The method includes: controlling the flash memory to perform a read operation upon a first page of the flash memory; obtaining a first codeword of the first page; obtaining a first set of log-likelihood ratio (LLR) mapping values of the first codeword according to a first LLR mapping rule; performing an error correction operation according to the first set of LLR mapping values; obtaining a second set of LLR values of the first codeword according to a second LLR mapping rule, if the error correction operation performed according to the first set of LLR mapping values indicates an uncorrectable result; and performing the error correction operation according to the second set of LLR mapping values.

Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.

Abstract: A method for reducing uncorrectable errors of a memory device regarding Error Correction Code (ECC) includes: performing majority vote according to data read at different times at a same address in order to generate majority vote data corresponding to the address; and checking whether the majority vote data has any uncorrectable error in order to determine whether to output the majority vote data as data of the address. An associated memory device and the controller thereof are further provided.

Abstract: A method for performing memory access management includes: with regard to a same memory cell of a memory, according to a first digital value output by the memory, requesting the memory to output at least one second digital value, wherein the first digital value and the at least one second digital value are utilized for determining information of a same bit stored in the memory cell, and a number of various possible states of the memory cell is equal to a number of various possible combinations of all bit(s) stored in the memory cell; and based upon the at least one second digital value, generating/obtaining soft information of the memory cell, for use of performing soft decoding. An associated memory device and a controller thereof are also provided.

Abstract: The invention provides a method for encoding and decoding an error correction code. First, raw data is received and then divided into a plurality of data segments. A plurality of short parities corresponding to the data segments is then generated according to a first generator polynomial. The short parities are then appended to the data segments to obtain a plurality of short codewords. The short codewords are then concatenated to obtain a code data. A long parity corresponding to the code data is then generated according to a second generator polynomial, wherein the first generator polynomial is a function of at least one minimum polynomial of the second generator polynomial. Finally, the long parity is then appended to the code data to obtain a long codeword as an error correction code corresponding to the raw data.

Abstract: An exemplary method for reading data stored in a flash memory includes: controlling the flash memory to perform a plurality of read operations upon each of a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from each of the memory cells as one of the bit sequences by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.

Abstract: The invention provides a data storage device. In one embodiment, the data storage device comprises a memory and a controller. The memory is for data storage. When the data storage device receives first source data to be written to the memory from a host, the controller generates at least one first input data according to the first source data, scrambles the first input data according to a plurality of pseudo random sequences to obtain a plurality of first scrambled signals, calculates a plurality of transmission powers of the first scrambled signals, and selects a target scrambled signal with a lowest transmission power to be stored in the memory from the first scrambled signals.

Abstract: A flash memory controller includes a recording medium and a processing circuit. When the amount of stored data in a flash memory module is less than a first threshold, the processing circuit controls a read and write circuit of the flash memory module to program a target data block using program threshold voltages within a first voltage range so as to write data into the target data block. When the amount of stored data in the flash memory module is greater than a second threshold, the processing circuit controls the read and write circuit to program the target data block using program threshold voltages within a second voltage range so as to write data into the target data block, wherein the second threshold is greater than the first threshold and the first voltage range is less than 50% of the second voltage range.

Abstract: A method for preventing a data storage device from data shift errors is provided. First, data is encoded into an error correction code. The error correction code is then scrambled to obtain a scrambled code to be stored in a memory. The scrambled code is then retrieved from the memory to obtain first read-out data. The first read-out data is then descrambled to obtain a first descrambled error correction code. The first descrambled error correction code is then decoded to determine whether the first descrambled error correction code has uncorrectable errors. When the first descrambled error correction code has uncorrectable errors, the scrambled code stored in the memory is read again to output second read-out data without shift errors. Following, the second read-out data is then descrambled to obtain a second descrambled error correction code, and the second descrambled error correction code is then decoded to recover the data.

Abstract: The invention provides a method for decoding an error correction code. First, an error syndrome of the error correction code is calculated. A plurality of coefficients of an error locator polynomial of the error correction code is then sequentially determined according to the error syndrome. When a new coefficient of the error locator polynomial is determined, it is also determined whether the new determined coefficient is equal to zero. When the new determined coefficient is equal to zero, a speculated error locator polynomial is built according to a plurality of low-order-term coefficients of the error locator polynomial, wherein the orders of the low-order-term coefficients are lower than that of the new determined coefficient. A Chien search is then performed to determine a plurality of roots of the speculated error locator polynomial. The error correction code is then corrected according to the roots of the speculated error locator polynomial.

Abstract: A data reading method is provided. The data reading method includes: utilizing a first sense voltage to read a data unit from a flash memory block; performing an error detection operation on the data unit and calculating an error polynomial according to a detection result; and determining whether the error polynomial conforms to a predetermined condition and deciding whether to perform read retry on the data unit according to a determining result.

Abstract: A method for controlling a message-passing algorithm (MPA) based decoding operation includes: gathering statistics data of syndromes obtained from executed iterations; and selectively adjusting a decoding operation in a next iteration to be executed according to the statistics data. A control apparatus for controlling an MPA based decoder includes an adjusting circuit and a detecting circuit. The detecting circuit is coupled to the adjusting circuit, and used for gathering statistics data of syndromes obtained from executed iterations, and selectively controlling the adjusting circuit to adjust a decoding operation in a next iteration to be executed according to the statistics data.