Abstract: A method comprises connecting a substrate having a plurality of integrated circuit (IC) dies to a package substrate, so that the package substrate extends beyond at least two edges of the substrate, leaving first and second edge portions of the package substrate having exposed contacts. The first and second edge portions meet at a first corner of the package substrate. At least a first upper die package is placed over the substrate, so that first and second edge portions of the first upper die package extend beyond the at least two edges of the substrate. Pads on the first and second edge portions of the first upper die package are connected to the contacts of the first and second edge portions of the package substrate.

Abstract: A method comprises connecting a substrate having a plurality of integrated circuit (IC) dies to a package substrate, so that the package substrate extends beyond at least two edges of the substrate, leaving first and second edge portions of the package substrate having exposed contacts. The first and second edge portions meet at a first corner of the package substrate. At least a first upper die package is placed over the substrate, so that first and second edge portions of the first upper die package extend beyond the at least two edges of the substrate. Pads on the first and second edge portions of the first upper die package are connected to the contacts of the first and second edge portions of the package substrate.

Abstract: A method of forming a stacked die structure is disclosed. A plurality of dies are respectively bonded to a plurality of semiconductor chips on a first surface of a wafer. An encapsulation structure is formed over the plurality of dies and the first surface of the wafer. The encapsulation structure covers a central portion of the first surface of the wafer and leaves an edge portion of the wafer exposed. A protective material is formed over the first surface of the edge portion of the wafer.

Abstract: A package includes a printed circuit board (PCB), and a die bonded to the PCB through solder balls. A re-workable underfill is dispensed in a region between the PCB and the die.

Abstract: A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A post-passivation interconnect (PPI) is electrically coupled to the metal pad, wherein the PPI includes a portion over the metal pad and the passivation layer. A polymer layer is over the PPI. A solder ball is over the PPI. A compound includes a portion adjoining the solder ball and the polymer layer, wherein the compound includes flux and a polymer.

Abstract: An assembly has at least one integrated circuit (IC) die fixed in a medium. The assembly has a redistribution layer over the IC die. The redistribution layer has conductors connecting first pads on active faces of the IC die to second pads at an exposed surface of the assembly. A die unit is provided over the IC die. The die unit has a bottom die interconnected to a package substrate. Respective portions of the redistribution layer corresponding to each of the at least one IC die partially underlie the bottom die, and extend beyond the bottom die. The package substrate has contacts connected to the ones of the second pads corresponding to the at least one IC die.

Abstract: A system and method for providing an integrated inductor with a high Quality factor (Q) is provided. An embodiment comprises a magnetic core that is in a center of a conductive spiral. The magnetic core increases the inductance of the integrated inductor to allow the inductor to be used in applications such as a RF choke. The magnetic core may be formed in the same manner and time as an underbump metallization.

Abstract: An embodiment is a method for semiconductor packaging. The method comprises attaching a chip to a carrier substrate through a first side of a jig, the chip being attached by bumps; applying balls to bond pads on the carrier substrate through a second side of the jig; and simultaneously reflowing the bumps and the balls. According to a further embodiment, a packaging jig comprises a cover, a base, and a connector. The cover has a first window through the cover. The base has a second window through the base. The first window exposes a first surface of a volume intermediate the cover and the base, and the second window exposes a second surface of the volume. The first surface is opposite the volume from the second surface. The connector aligns and couples the cover to the base.

Abstract: A method for thin wafer handling and processing is provided. In one embodiment, the method comprises providing a wafer having a plurality of semiconductor chips, the wafer having a first side and a second side. A plurality of dies are attached to the first side of the wafer, at least one of the dies are bonded to at least one of the plurality of semiconductor chips. A wafer carrier is provided, wherein the wafer carrier is attached to the second side of the wafer. The first side of the wafer and the plurality of dies are encapsulated with a planar support layer. A first adhesion tape is attached to the planar support layer. The wafer carrier is then removed from the wafer and the wafer is diced into individual semiconductor packages.

Abstract: A thin wafer protection device includes a wafer having a plurality of semiconductor chips. The wafer has a first side and an opposite second side. A plurality of dies is over the first side of the wafer, and at least one of the plurality of dies is bonded to at least one of the plurality of semiconductor chips. A wafer carrier is over the second side of the wafer. An encapsulating layer is over the first side of the wafer and the plurality of dies, and the encapsulating layer has a planar top surface. An adhesive tape is over the planar top surface of the encapsulating layer.

Abstract: A system, a structure and a method of manufacturing stacked semiconductor substrates is presented. A first substrate includes a first side and a second side. A through substrate via (TSV) protrudes from the first side of the first substrate. A first protruding portion of the TSV has a conductive protective coating and a second protruding portion of the TSV has an isolation liner. The system further includes a second substrate and a joint interface structure that bonds the second substrate to the first substrate at the conductive protective coating of the first protruding portion of the TSV.

Abstract: An integrated circuit structure includes a first die including TSVs; a second die over and bonded to the first die, with the first die having a surface facing the second die; and a molding compound including a portion over the first die and the second die. The molding compound contacts the surface of the second die. Further, the molding compound includes a portion extending below the surface of the second die.

Abstract: An integrated circuit structure includes a bottom die; a top die bonded to the bottom die with the top die having a size smaller than the bottom die; and a molding compound over the bottom die and the top die. The molding compound contacts edges of the top die. The edges of the bottom die are vertically aligned to respective edges of the molding compound.

Abstract: A method of forming a stacked die structure is disclosed. A plurality of dies are respectively bonded to a plurality of semiconductor chips on a first surface of a wafer. An encapsulation structure is formed over the plurality of dies and the first surface of the wafer. The encapsulation structure covers a central portion of the first surface of the wafer and leaves an edge portion of the wafer exposed. A protective material is formed over the first surface of the edge portion of the wafer.

Abstract: A method for thin wafer handling and processing is provided. In one embodiment, the method comprises providing a wafer having a plurality of semiconductor chips, the wafer having a first side and a second side. A plurality of dies are attached to the first side of the wafer, at least one of the dies are bonded to at least one of the plurality of semiconductor chips. A wafer carrier is provided, wherein the wafer carrier is attached to the second side of the wafer. The first side of the wafer and the plurality of dies are encapsulated with a planar support layer. A first adhesion tape is attached to the planar support layer. The wafer carrier is then removed from the wafer and the wafer is diced into individual semiconductor packages.

Abstract: A system and method for integrated circuit fabrication is provided. A wafer holding system includes a wafer carrier that holds the wafer at a specified alignment, and a top ring disposed on a top surface of the wafer and of the wafer carrier. The top ring holds the wafer and the wafer carrier together as a single unit. The wafer carrier includes an alignment mechanism to hold the wafer in the specified alignment.

Abstract: An integrated circuit structure includes a die including a semiconductor substrate; dielectric layers over the semiconductor substrate; an interconnect structure including metal lines and vias in the dielectric layers; a plurality of channels extending from inside the semiconductor substrate to inside the dielectric layers; and a dielectric film over the interconnect structure and sealing portions of the plurality of channels. The plurality of channels is configured to allow a fluid to flow through.

Abstract: A system, a structure and a method of manufacturing stacked semiconductor substrates is presented. A first substrate includes a first side and a second side. A through substrate via (TSV) protrudes from the first side of the first substrate. A first protruding portion of the TSV has a conductive protective coating and a second protruding portion of the TSV has an isolation liner. The system further includes a second substrate and a joint interface structure that bonds the second substrate to the first substrate at the conductive protective coating of the first protruding portion of the TSV.

Abstract: A system and method for improved semiconductor die production is provided. A preferred embodiment provides a method for creating a stackable die, the method includes providing a first substrate, and forming through-silicon vias in the first substrate. The through-silicon vias extend from a first surface of the first substrate, wherein the through-silicon vias connect to a conductive layer on the first surface of the first substrate, and wherein the conductive layer has a planar surface. The conductive layer joins to a carrier substrate with an adhesive. The method continues by joining a second substrate to a second surface of the first substrate, removing the carrier substrate, removing the adhesive layer, and patterning the conductive layer to form contact pads.