Abstract: A display device is provided, including a first flexible substrate, a second flexible substrate, an electrode layer, and a TFT circuit. The second flexible substrate is disposed opposite to the first flexible substrate. The electrode layer is formed on the first flexible substrate. The TFT circuit is formed on the first flexible substrate. The first flexible substrate has a first light transmission chromaticity coordinates (x1, y1), the second flexible substrate has a second light transmission chromaticity coordinates (x2, y2), and x1?x2?0.002 or y1?y2?0.002.

Abstract: A semiconductor device may include a source on a first side of a gate. The semiconductor device may include a drain on a second side of the gate, where the second side of the gate is opposite to the first side of the gate. The semiconductor device may include a first contact over the source. The semiconductor device may include a second contact over the drain. The semiconductor device may include an air gap over the gate between at least the first contact and the second contact. The semiconductor device may include at least two dielectric materials in each of a region between the air gap and the first contact and a region between the air gap and the second contact.

Abstract: Systems and methods here may be used for automated capturing and analyzing spectrometer data of multiple sample gemstones on a stage, including mapping digital camera image data of samples, applying a Raman Probe to a first sample gemstone under evaluation on the stage, receiving spectrometer data of the sample gemstone from the probe, automatically moving the stage to a second sample, using the image data, and analyzing the other samples.

Abstract: A TOI LiDAR System generates an image of an object based on the distance of various point measurements to the object. The TOI LiDAR System detects the envelope of an electrical signal created from an interference light signal. The interference light signal is produced from the back-reflected light resulting from a sampling arm light emission to the object combined with a reference light emission. The reference light emission is created by splitting a pulse-modulated coherent light source's emission signal and passing the reference light emission through a reference arm. The optical interference signal is transferred to a balanced photodetector to convert to an electrical signal converted to digital data. The digital data is evaluated to determine the rising edges or falling edges of a digitized electrical interference signal to determine a time delay between the reference light emission and back-reflected light used to calculate the distance.

Abstract: A semiconductor arrangement includes a gate structure disposed between a first source/drain region and a second source/drain region and a first contact disposed over the first source/drain region. The semiconductor arrangement includes a second contact disposed over the second source/drain region and an airgap disposed between the first contact and the second contact and over the gate structure.

Abstract: A display device includes a substrate, a driving circuit structure and a light emitting device. The light emitting device is disposed on the driving circuit structure and electrically connected to a driving thin film transistor in the driving circuit structure, wherein a device conductive layer includes a first section electrically connected to a first carrier transmitting layer through a first conductive connecting structure and a second section electrically connected to a second carrier transmitting layer through a second conductive connecting structure. A minimum distance between a topmost surface of the first section and the substrate is greater than a minimum distance between a topmost surface of the second conductive connecting structure and the substrate, and a minimum distance between a topmost surface of the second section and the substrate is greater than a minimum distance between a topmost surface of the first conductive connecting structure and the substrate.

Abstract: An electronic device is provided. The electronic device includes a substrate, a feeding line and an electrode. The feeding line is disposed on the substrate for transmitting a signal. The electrode is disposed on the substrate for receiving the signal. In addition, an end portion of the feeding line is disposed opposite to an end portion of the electrode.

Abstract: The disclosure provides a flexible display device. The flexible display device includes a first flexible substrate, a light conversion structure and a touch electrode. The light conversion structure and the touch electrode are disposed on the first flexible substrate.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first semiconductor layer, an insulating layer and a second semiconductor layer in a substrate. The method also includes forming a first isolation feature in the first semiconductor layer, the insulating layer and the second semiconductor layer. The method further includes forming a transistor in and over the substrate adjacent to the first isolation feature. In addition, the method includes etching the first isolation feature to form a trench extending below the insulating layer. The method also includes filling the trench with a metal material to form a second isolation feature in the first isolation feature.

Abstract: According to one embodiment of the invention, a display device having a first region adjacent to a transflective object in a vehicle, comprising: a first light emitting unit disposed in the first region; and a light controlling means disposed on a route that a first light and a second light emitted from the first light emitting unit propagate, through which the first light is controlled to propagate out of the display device at a first angle ranged from 30 degrees to 45 degrees and toward the transflective object and the second light is controlled to propagate out of the display device at a second angle ranged from 0 degrees to 5 degrees; wherein a first ratio of a light intensity of the first light to that of the second light is less than or equal to 14%.

Abstract: A semiconductor structure includes a high-k metal gate structure (HKMG) disposed over a channel region of a semiconductor layer formed over a substrate, where the HKMG includes an interfacial layer disposed over the semiconductor layer, a high-k dielectric layer disposed over the interfacial layer, and a gate electrode disposed over the high-k dielectric layer, where a length of the high-k dielectric layer is greater than a length of the gate electrode and where outer edges of the interfacial layer, the high-k dielectric layer, and the gate electrode form a step profile. The semiconductor structure further includes gate spacers having sidewall portions contacting sidewalls of the gate electrode and bottom portions contacting top portions of the high-k dielectric layer and the interfacial layer, and source/drain features disposed in the semiconductor layer adjacent to the HKMG.

Abstract: A display device having an active region and a non-active region, includes a first substrate, a second substrate, and a sealing layer. The first substrate includes a first substrate layer, a plurality of light-emitting units disposed on the first substrate layer in the active region, and a plurality of dams disposed on the first substrate layer in the non-active region. The second substrate includes a plurality of light conversion units in the active region. The sealing layer is disposed between the first substrate and the second substrate, wherein the sealing layer includes a first portion disposed in the non-active region and a second portion disposed in the active region, and the first portion and the second portion are continuous, wherein at least a part of the first portion of the sealing layer is disposed between at least two of the plurality of dams.

Abstract: A lighting device and a related manufacturing method are provided. The lighting device includes a substrate and at least one lighting unit formed on the substrate. The lighting unit includes an accommodating hole and a first light emitting diode spaced apart from the accommodating hole. The accommodating hole is for a second light emitting diode.

Abstract: A method for manufacturing an electronic device includes providing a substrate, forming a plurality of connecting pads and a plurality of conductive portions partially overlapped by the plurality of connecting pads on a surface of the substrate; forming a plurality of conductive lines on the substrate, wherein the plurality of conductive lines are electrically connected to the plurality of conductive portions; and bonding a plurality of light emitting units to the plurality of connecting pads. The method may further includes identifying a defective light emitting unit from the plurality of light emitting units; removing the defective light emitting unit from a corresponding position on the substrate; and bonding-another light emitting unit to the corresponding position.

Abstract: A light emitting module and a light emitting device including the light emitting module are provided. The light emitting module includes a circuit structure and a plurality of light emitting units. The circuit structure has a first side and a second side opposite to the first side. The circuit structure includes a plurality of first pads disposed on the first side and at least one second pad disposed on the second side. The first pads are electrically connected to the at least one second pad. The light emitting units are electrically connected to the first pads. The number of the first pads is more than the number of the at least one second pad.

Abstract: The disclosure provides a display device. The display device includes a substrate, a transistor, an insulating layer, a light blocking layer, a light emitting element, and a light conversion element. The transistor is disposed on the substrate. The insulating layer is disposed on the substrate. The insulating layer includes at least one opening. The light blocking layer is disposed on a top surface of the insulating layer and at least partially overlapped with the transistor. The light emitting element is disposed in the at least one opening, and the light emitting element includes an electrode electrically connected to the transistor. The light conversion element is disposed on the light emitting element.

Abstract: A lighting device includes a lighting unit emitting an output light having a light spectrum. The light spectrum in a range from 520 nm to 780 nm has a main peak, and the light spectrum in a range from 400 nm to 470 nm has a sub peak with a maximum intensity at a first wavelength. A first sub peak integral is an integral of the light spectrum calculated from a wavelength of the first wavelength minus 20 nm to the first wavelength. An intensity integral of a main wave having the main peak in the light spectrum is calculated from 521 nm to 780 nm, and a ratio of the first sub peak integral to the intensity integral is in a range from 0.05 % to 2%.

Abstract: A display module installed on a device of a vehicle is disclosed. The device includes an airbag module having an inflator and an airbag, and the airbag is configured to be inflated by a gas produced by the inflator. The display module includes a display panel. The display panel is disposed on the airbag module when the airbag is not inflated by the gas. The display panel is secured to the device of the vehicle when the airbag is inflated by the gas.

Abstract: A display device is disclosed, which includes: a substrate; a scan line disposed on the substrate; a drain electrode, disposed on the substrate and including an arc edge; a first transparent conductive layer disposed on the substrate; and a second transparent conductive layer disposed between the substrate and the first transparent conductive layer, wherein the arc edge is located outside the scan line, and the arc edge is not overlapped with the second transparent conductive layer.

Abstract: A semiconductor device may include a source on a first side of a gate. The semiconductor device may include a drain on a second side of the gate, where the second side of the gate is opposite to the first side of the gate. The semiconductor device may include a first contact over the source. The semiconductor device may include a second contact over the drain. The semiconductor device may include an air gap over the gate between at least the first contact and the second contact. The semiconductor device may include at least two dielectric materials in each of a region between the air gap and the first contact and a region between the air gap and the second contact.