Abstract: An electronic device for controlling an LRA (Linear Resonant Actuator) includes a signal generator, a driver, a delay unit, a sensor, and a DSP (Digital Signal Processor). The signal generator generates a digital signal. The driver drives the LRA according to the digital signal. The delay unit delays the digital signal for a predetermined time, so as to generate an estimated voltage signal. The sensor detects the current flowing through the LRA, so as to generate a sensing current signal. The DSP controls the resonant frequency or the gain value of the signal generator according to the estimated voltage signal and the sensing current signal.

Abstract: Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.

Abstract: Embodiments of gas distribution modules for use with rapid thermal processing (RTP) systems and methods of use thereof are provided herein. In some embodiments, a gas distribution module for use with a RTP chamber includes: a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture; a vaporizer coupled to the mixer and configured to receive the first mixture in a hollow internal volume, the vaporizer having a heater configured to vaporize the first mixture; and a first gas delivery line disposed between the vaporizer and the RTP chamber to deliver the vaporized first mixture to the RTP chamber.

Abstract: A toilet brush with a quick replaceable cleaning head is disclosed herein. It comprises a rod body having a first end and a second end; a handle disposed at the first end of the rod body; a feeding unit for connecting the handle; an action rod accommodated in the rod body for connecting the feeding unit and having a clamping head; and a cleaning head having a sleeve and an aperture into which the clamping head is inserted.

Abstract: Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.

Abstract: Methods of mitigating line bending during feature fill include deposition of an amorphous layer and/or an inhibition treatment during fill.

Abstract: Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.

Abstract: Aspects of the present disclosure generally relate to oscillating a boundary layer of a flow of process gas in methods and systems for processing substrates. In one aspect, one or more of a pressure, a gas flow rate, and/or a height of a substrate are oscillated during processing. In one implementation, a method of processing a substrate includes conducting a processing operation on the substrate in an interior volume of a processing chamber. The conducting the processing operation on the substrate includes moving a flow of one or more process gases over a surface of the substrate. The method also includes oscillating a boundary layer of the flow of one or more process gases while the flow of one or more process gases moves over the surface of the substrate.

Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.

Abstract: Methods of depositing a tungsten nucleation layers that achieve very good step coverage are provided. The methods involve a sequence of alternating pulses of a tungsten-containing precursor and a boron-containing reducing agent, while co-flowing hydrogen (H2) with the boron-containing reducing agent. The H2 flow is stopped prior to the tungsten-containing precursor flow. By co-flowing H2 with the boron-containing reducing agent but not with the tungsten-containing precursor flow, a parasitic CVD component is reduced, resulting in a more self-limiting process. This in turn improves step coverage and conformality of the nucleation layer. Related apparatuses are also provided.

Abstract: Systems and methods for selective inhibition control in semiconductor manufacturing are provided. An example method includes providing a substrate including a feature having one or more feature openings and a feature interior. A nucleation layer is formed on a surface of the feature interior. Based on a differential inhibition profile, a nonconformal bulk layer is selectively formed on a surface of the nucleation layer to leave a region of the nucleation layer covered, and a region of the nucleation layer uncovered by the nonconformal bulk layer. An inhibition layer is selectively formed on the covered and uncovered regions of the nucleation layer. Tungsten is deposited in the feature in accordance with the differential inhibition profile.

Abstract: A control chip comprising: at least pin; a control circuit; a clock generation circuit, configured to generate a clock signal; a power providing circuit, configured to provide an always on power; a touch detection circuit, configured to receive the always on power, and configured to detect a touch event via the pin to generate a touch detection signal; a logic circuit, configured to receive the always on power, the clock signal and the touch detection signal, wherein the logic circuit controls the power providing circuit to provide a core power to the control circuit according to the touch detection signal. The control circuit is further configured to set the logic circuit such that the logic circuit can control the touch detection circuit. A related touch detection method is also discloses. Via the control chip and the touch detection method, the circuit area and the power consumption can be decreased.

Abstract: A control chip comprising: at least pin; a control circuit; a clock generation circuit, configured to generate a clock signal; a power providing circuit, configured to provide an always on power; a touch detection circuit, configured to receive the always on power, and configured to detect a touch event via the pin to generate a touch detection signal; a logic circuit, configured to receive the always on power, the clock signal and the touch detection signal, wherein the logic circuit controls the power providing circuit to provide a core power to the control circuit according to the touch detection signal. The control circuit is further configured to set the logic circuit such that the logic circuit can control the touch detection circuit. A related touch detection method is also discloses. Via the control chip and the touch detection method, the circuit area and the power consumption can be decreased.

Abstract: A method, an electronic device, and a computer program product for photo organization are provided, where the method is adapted to an electronic device and includes the following steps. First, multiple photos are obtained, and multiple special photos are selected from the photos, where each of the photos includes time information and GPS information. The special photos are sorted from the earliest to the most recent according to the time information. One of the special photos is defined as an origin photo, and the special photos sorted after the origin photo are defined as relative photos. A moving distance and a moving angle of each of the relative photos with respect to the origin photo are calculated according to the GPS information. The origin photo and the relative photos are classified into multiple location groups according to variations of the moving distances and variations of the moving angles.

Abstract: This disclosure describes low frequency non-separable transform and multiple transform selection deadlock prevention. The systems and methods may allow for types of transforms performed on the encoding side of a video encoding and decoding system to be determined prior to the transform parameters being decoded on the decoder side. This may allow for the inverse transform of some or all transform units (TU) received in a bit stream to be performed quicker, which may reduce the stress on the bit stream buffer.

Abstract: Disclosed are an electrostatic discharge circuit and a method for preventing malfunctions of an integrated circuit due to a reverse connection of a power source. The electrostatic discharge circuit includes at least one MOSFET for providing an electrostatic discharging current path, and a control circuit coupled to the at least one MOSFET. When an external power supply is reversely connected, the control circuit is configured to change a potential of a body of at least one MOSFET, such that the at least one MOSFET is turned off, thereby preventing the integrated circuit from malfunctioning caused by a current generated by the reverse connection of the external power source flowing through the at least one MOSFET.

Abstract: Provided herein are methods of depositing low stress and void free metal films in deep features and related apparatus. Embodiments of the methods include treating the sidewalls of the holes to inhibit metal deposition while leaving the feature bottom untreated. In subsequent deposition operations, metal precursor molecules diffuse to the feature bottom for deposition. The process is repeated with subsequent inhibition operations treating the remaining exposed sidewalls. By repeating inhibition and deposition operations, high quality void free fill can be achieved. This allows high temperature, low stress deposition to be performed.

Abstract: An embodiment of the disclosure provides a customer behavior analyzing method which includes: capturing an image of a target region by at least one camera; analyzing the image by an image recognition module to detect a customer behavior of at least one customer in the target region; and automatically generating customer behavior information according to the customer behavior. The customer behavior information reflects attention of the customer to at least one commodity. Another embodiment of the disclosure provides a customer behavior analyzing system.

Abstract: Disclosed are an electrostatic discharge circuit and a method for preventing malfunctions of an integrated circuit due to a reverse connection of a power source. The electrostatic discharge circuit includes at least one MOSFET for providing an electrostatic discharging current path, and a control circuit coupled to the at least one MOSFET. When an external power supply is reversely connected, the control circuit is configured to change a potential of a base of at least one MOSFET, such that the at least one MOSFET is turned off, thereby preventing the integrated circuit from malfunctioning caused by a current generated by the reverse connection of the external power source flowing through the at least one MOSFET.

Abstract: A toilet brush with a quick replaceable cleaning head is disclosed herein. It comprises a rod body having a first end and a second end; a handle disposed at the first end of the rod body; a feeding unit for connecting the handle; an action rod accommodated in the rod body for connecting the feeding unit and having a clamping head; and a cleaning head having a sleeve and an aperture into which the clamping head is inserted.