Abstract: According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first side surface thereof. The two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate. A rearmost portion of the first side surface is substantially perpendicular to the front surface.

Abstract: According to one embodiment, a dicing method is provided. The dicing method includes detecting a first distance between a first portion of a substrate and a first substrate information detection unit. The method also includes detecting a second distance between a second portion of the substrate a second substrate information detection unit, the second portion different from the first portion. Distance information is calculated between the substrate and a processing lens, which is located farther from the second substrate information detection unit than from the first substrate information detection unit, based on the detected first distance and the detected second distance, and he substrate is irradiated with laser light from the processing lens based on the distance information.

Abstract: According to an embodiment, a method of manufacturing a semiconductor device includes forming a first modified zone in a wafer by irradiating the wafer with a laser having transmissivity with respect to the wafer along a part of a dicing line on the wafer, and forming a second modified zone in the wafer by irradiating the wafer with the laser along the dicing line on the wafer. The first modified zone is partially formed between a surface of the wafer and the second modified zone, a semiconductor interconnect layer being formed on the surface of the wafer.

Abstract: According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.

Abstract: The multi-layer display device apparatus has a first display part, a second display part arranged at the rear-side of the first display part, a transforming part arranged between the first and the second display part. The transforming part transforms a linear polarized light in to a non-polarized light. Further, the display device has a storage part which stores a parameter for adjusting the image quality of the image displayed on the first and second display part, and an image adjustment part which adjusts the image quality of the image displayed in the first and second display part based on the parameter stored in the storage part.

Abstract: According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.

Abstract: According to one embodiment, a semiconductor device manufacturing method is disclosed. The method comprises (a) forming cut grooves in a front surface of a semiconductor wafer on which semiconductor elements are formed to partition the front surface into a plurality of regions, (b) disposing partly a resin in the cut grooves, (c) adhering a protection tape on the front surface of the semiconductor wafer, (d) thinning the semiconductor wafer by grinding a rear surface of the semiconductor wafer to reach the cut grooves, (e) forming an adhesive agent layer on the rear surface of the semiconductor wafer, and (f) dividing the semiconductor wafer into a plurality of semiconductor chips by cutting the adhesive agent layer together with the disposed resin along the cut grooves.

Abstract: The multi-layer display device apparatus has a first display part, a second display part arranged at the rear-side of the first display part, a transforming part arranged between the first and the second display part. The transforming part transforms a linear polarized light in to a non-polarized light. Further, the display device has a storage part which stores a parameter for adjusting the image quality of the image displayed on the first and second display part, and an image adjustment part which adjusts the image quality of the image displayed in the first and second display part based on the parameter stored in the storage part.

Abstract: Two liquid crystal panels are laid one over the other in a state that each of the liquid crystal panels is oriented in a forward direction. At least one spacer is detachably provided between the two liquid crystal panels. The liquid crystal panels are positioned relative to each other by a plurality of through-holes arrayed in a thickness direction of the spacer by an interval corresponding to the thickness of the spacer, and a projection engageable in one of the through-holes.

Abstract: Two liquid crystal panels are laid one over the other in a state that each of the liquid crystal panels is oriented in a forward direction. At least one spacer is detachably provided between the two liquid crystal panels. The liquid crystal panels are positioned relative to each other by a plurality of through-holes arrayed in a thickness direction of the spacer by an interval corresponding to the thickness of the spacer, and a projection engageable in one of the through-holes.

Abstract: The present invention provides an imaging apparatus, comprising a multifocal lens (210) having a plurality of lens portions different from one another in focal length; an imaging device (29) for converting an image formed thereon by said multifocal lens (210) into an electric signal to be outputted therethrough as an image signal; a computing unit (33) for carrying out a weighted computing process on said image signal from said imaging device (29) in accordance with a predetermined compensation function to output a compensated image signal as an output image signal, and in which said compensation function is an inverse function obtained based on a point spread function with respect to an object disposed at a predetermined distance from an optical system constituted by said multifocal lens (210).

Abstract: An imaging apparatus for imaging a first object at a normal distance and a second object nearer than the first object readily with high precision. The imaging apparatus has an imaging lens, an imaging device for capturing an image formed by the imaging lens, and a camera control unit. The imaging lens is a multifocal lens and contains a first lens portion having a first focal length for imaging the first object (e.g., the user of the imaging apparatus) at a normal distance and a second lens portion having a second focal length for imaging the second object (e.g., a bar code) nearer than the first object. The first and second lens portions are arranged on the same plane and formed in one piece. The information collected by imaging the second object is used for processing such as communications or displays.