Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.

Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Abstract: A solid-state imaging device including: an imaging pixel region where a plurality of imaging pixels is disposed; a vertical selecting circuit for outputting pixel signals from imaging pixels of respective columns on a selected row of the imaging pixel region to vertical signal lines provided respectively for the columns; charge integrating amps provided respectively for the vertical signal lines of the columns so as to receive inputs of pixel signals from imaging pixels of the respective columns; holding elements that allow the input pixel signals to be held in the charge integrating amps even in periods when the charge integrating amps are in a standby state; and a horizontal selecting circuit for transferring pixel signals output from the respective charge integrating amps by a horizontal signal line.

Abstract: A solid-state imaging device includes: an imaging unit taking a subject image focused by an imaging optical system; a digital signal processing unit generating image data of the subject image taken by the imaging unit and luminance data thereof; an input/output unit inputting and outputting data; a focus evaluation value generating unit generating a focus evaluation value of the subject image based on the luminance data outputted from the digital signal processing unit and outputting the focus evaluation value from the input/output unit; and an imaging drive unit starting an imaging operation by the imaging unit when an imaging instruction signal is inputted from the input/output unit, and outputting an imaging-end timing signal from the input/output unit when the imaging operation is completed.

Abstract: From a pixel array where imaging pixels are arranged, pixel signals of respective columns on a selected row are read in parallel in a horizontal blanking period of a horizontal period. The pixel signals of the respective columns are output to horizontal signal lines in an effective period of the horizontal period via charge integrating amps provided respectively for the columns, i.e., provided respectively for vertical signal lines, and are thereby transferred horizontally. In the charge integrating amps, it is possible to enter a standby state while holding the pixel signals by a holding voltage. Furthermore, in the charge integrating amps, a reference potential for precharging feedback capacitors for amps at the time of a reading operation is automatically controlled based on a black level. Furthermore, pixel signals from the respective charge integrating amps are horizontally transferred in parallel using a plurality of horizontal signal lines.

Abstract: From a pixel array where imaging pixels are arranged, pixel signals of respective columns on a selected row are read in parallel in a horizontal blanking period of a horizontal period. The pixel signals of the respective columns are output to horizontal signal lines in an effective period of the horizontal period via charge integrating amps provided respectively for the columns, i.e., provided respectively for vertical signal lines, and are thereby transferred horizontally. In the charge integrating amps, it is possible to enter a standby state while holding the pixel signals by a holding voltage. Furthermore, in the charge integrating amps, a reference potential for precharging feedback capacitors for amps at the time of a reading operation is automatically controlled based on a black level. Furthermore, pixel signals from the respective charge integrating amps are horizontally transferred in parallel using a plurality of horizontal signal lines.

Abstract: A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided. An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example ?1V).

Abstract: A dc level control method for holding a dc level of a clamp portion in an electric signal to be a prescribed value is disclosed, wherein the method comprises the steps of: comparing a dc level of a sampling interval in said electric signal with a predetermined reference value to obtain a difference between said dc level and said reference value using an A/D converting section for dc level comparison which has a lower bit resolution than an A/D converting section for digital signal processing of said electric signal; and feeding back a clamp signal to said electric signal so that said obtained difference between said dc level and said reference value substantially becomes zero. This method is suitable for applying to a signal processing system for a solid state imaging apparatus.

Abstract: A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided. An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example ?1V).

Abstract: From a pixel array where imaging pixels are arranged, pixel signals of respective columns on a selected row are read in parallel in a horizontal blanking period of a horizontal period. The pixel signals of the respective columns are output to horizontal signal lines in an effective period of the horizontal period via charge integrating amps provided respectively for the columns, i.e., provided respectively for vertical signal lines, and are thereby transferred horizontally. In the charge integrating amps, it is possible to enter a standby state while holding the pixel signals by a holding voltage. Furthermore, in the charge integrating amps, a reference potential for precharging feedback capacitors for amps at the time of a reading operation is automatically controlled based on a black level. Furthermore, pixel signals from the respective charge integrating amps are horizontally transferred in parallel using a plurality of horizontal signal lines.

Abstract: An image sensor is disclosed, which includes: a pixel unit having a plurality of pixels each outputting incident light as a pixel signal; an amplifier amplifying the pixel signal output from the pixel unit; and a defective pixel detection circuit performing a defective pixel detection on signals output from the amplifier, wherein the defective pixel detection circuit adjusts the detection accuracy of the defective pixel detection in accordance with an exposure condition of the pixel unit.

Abstract: From a pixel array where imaging pixels are arranged, pixel signals of respective columns on a selected row are read in parallel in a horizontal blanking period of a horizontal period. The pixel signals of the respective columns are output to horizontal signal lines in an effective period of the horizontal period via charge integrating amps provided respectively for the columns, i.e., provided respectively for vertical signal lines, and are thereby transferred horizontally. In the charge integrating amps, it is possible to enter a standby state while holding the pixel signals by a holding voltage. Furthermore, in the charge integrating amps, a reference potential for precharging feedback capacitors for amps at the time of a reading operation is automatically controlled based on a black level. Furthermore, pixel signals from the respective charge integrating amps are horizontally transferred in parallel using a plurality of horizontal signal lines.

Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Abstract: A solid-state imaging device including: an imaging pixel region where a plurality of imaging pixels is disposed; a vertical selecting circuit for outputting pixel signals from imaging pixels of respective columns on a selected row of the imaging pixel region to vertical signal lines provided respectively for the columns; charge integrating amps provided respectively for the vertical signal lines of the columns so as to receive inputs of pixel signals from imaging pixels of the respective columns; holding elements that allow the input pixel signals to be held in the charge integrating amps even in periods when the charge integrating amps are in a standby state; and a horizontal selecting circuit for transferring pixel signals output from the respective charge integrating amps by a horizontal signal line.

Abstract: A solid-state image pickup apparatus and an image pickup method are disclosed which can detect and correct fixed pattern noise efficiently and accurately. Pickup image signals produced by reading out signals in parallel from a pixel sensor section are subject to an analog gain process, an A/D conversion process and a digital gain process. Within a period within which the pickup image signals which are based on a fixed value are inputted within a one-frame period, a reference signal average is produced from the signals. Sum values of difference values of the signals from the reference signal average are stored. Within a period within which the pickup image signals from valid pixels are inputted within the one-frame period, fixed pattern noise is removed from the pickup image signals using division averages obtained by dividing the stored sum values.

Abstract: An image sensor includes a solid-state image pickup device, an optical system, and a flash. The solid-state image pickup device has an electronic shutter function of outputting accumulated signal charges at a timing corresponding to a shutter speed. The optical system collects incident light to an image pickup area of the solid-state image pickup device. The flash irradiates light to an object to be photographed by the solid-state image pickup device. The solid-state image pickup device includes a pulse generator circuit for generating one or more of an electronic shutter pulse for controlling an accumulation time of signal charges by using the electronic shutter function, an optical system movement pulse for controlling movement of the optical system, and a flash pulse for controlling an emission timing of the flash.

Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.

Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.