Abstract: A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %.

Abstract: To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

Abstract: A transistor with high electrical characteristics is provided. A transistor with a high on-state current is provided. A transistor with small parasitic capacitance is provided. A transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated is provided. The transistor includes a first conductive layer, a second conductive layer, a semiconductor layer, a gate insulating layer over the semiconductor layer, and a gate electrode over the gate insulating layer. A first insulating layer is between the first conductive layer and the second conductive layer. The second conductive layer is over the first insulating layer. The first insulating layer and the second conductive layer include an opening portion reaching the first conductive layer. The semiconductor layer is in contact with a sidewall of the opening portion. The semiconductor layer includes a first oxide layer and a second oxide layer. The first oxide layer includes a first region and a second region.

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Abstract: A semiconductor device includes an oxide semiconductor layer, first to third conductive layers, and first to third insulating layers. The first conductive layer includes a first depressed portion. The first insulating layer over the first conductive layer and the second conductive layer over the first insulating layer include a first opening portion overlapping with the first depressed portion. The oxide semiconductor layer is in contact with a top surface of the second conductive layer, bottom and side surfaces of the first depressed portion, a side surface of the second conductive layer, and a side surface of the first insulating layer. The second insulating layer is positioned inside the oxide semiconductor layer in the first opening portion. The third insulating layer covers top and side surfaces of the oxide semiconductor layer over the first insulating layer, and includes a second opening portion overlapping with the first opening portion.

Abstract: To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and a second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

Abstract: A shield case including a base portion made of a nonmetal material and having a mounting surface on which the electronic component is mounted, a cover portion made of a metal material and covering surroundings of the electronic component and a metal plate abutting with an outer surface of the base portion and having an end portion projecting outward from the base portion. A side-wall end portion of the cover member includes a first end abutting with the mounting surface of the base portion, and a second end extending in a thickness direction of the base portion and abutting with the end portion of the metal plate.

Abstract: Disclosed is a connecting harness that connects M first devices (where M is an integer equal to or greater than 1) and N second devices (where N is an integer equal to or greater than 2) using connecting cords each including at least one of an optical fiber cord and a metal cord. The connecting harness includes a connecting cord group including the M×N connecting cords, in which first connectors capable of being connected to the first devices are provided at one end of each of the connecting cords and second connectors capable of being connected to the second devices are provided at the other end of each of the connecting cords; a first bundling member bundling the connecting cords of the connecting cord group beside the first device in a predetermined number; and a second bundling member bundling the connecting cords of the connecting cord group beside the second device in a predetermined number.

Abstract: A shield case including a base portion made of a nonmetal material and having a mounting surface on which the electronic component is mounted, a cover portion made of a metal material and covering surroundings of the electronic component and a metal plate abutting with an outer surface of the base portion and having an end portion projecting outward from the base portion. A side-wall end portion of the cover member includes a first end abutting with the mounting surface of the base portion, and a second end extending in a thickness direction of the base portion and abutting with the end portion of the metal plate.

Abstract: Disclosed is a connecting harness that connects M first devices (where M is an integer equal to or greater than 1) and N second devices (where N is an integer equal to or greater than 2) using connecting cords each including at least one of an optical fiber cord and a metal cord. The connecting harness includes a connecting cord group including the M×N connecting cords, in which first connectors capable of being connected to the first devices are provided at one end of each of the connecting cords and second connectors capable of being connected to the second devices are provided at the other end of each of the connecting cords; a first bundling member bundling the connecting cords of the connecting cord group beside the first device in a predetermined number; and a second bundling member bundling the connecting cords of the connecting cord group beside the second device in a predetermined number.

Abstract: A display system includes first and second operation displays, wherein the display system causes the first and second operation displays to perform a cooperative operation, in a case where a predetermined operation has been received via the first operation display when the first operation display is in a power saving display state and the first and second operation displays are not performing the cooperative operation, the state of the first operation display is changed to the normal display state, and in a case where the predetermined operation has been received via the first operation display when the first operation display is in the power saving display state and the second operation display is in the normal display state and the first and second operation displays are performing the cooperative operation, the display system maintains the first operation display in the power saving display state.

Abstract: Disclosed is an operation display system, including: an operation display device including a display unit to display an operation window; an operating unit to receive an operation to the operation window; and a display control unit to change the operation window in accordance with the operation received by using the operating unit; an air operation detecting unit to detect an air operation performed by one user in air apart from the display unit; a virtual operation window creating unit to create a virtual operation window in which the operation window is changed in accordance with the air operation; and an AR display unit to show the one user an augmented reality space in which the virtual operation window is synthesized with a real space, wherein the display control unit does not change the operation window displayed on the display unit, in accordance with the air operation.

Abstract: A sealing structure includes: components (1, 2, 11, 16, 21, 22, 33, 34, 44, 51, 52, 61, 62) respectively having sealing surfaces (8, 9, 14, 17, 30, 31, 42, 43, 49, 71, 72) on surfaces thereof facing each other; and a seal member (3, 18, 25, 37, 46, 50, 55, 65, 104, 105, 106, 140, 240) interposed between the sealing surfaces to make the sealing surfaces closely adhere to each other, and at least a hard carbon film (6, 7, 13, 28, 29, 40, 41, 48, 53, 54, 66, 67, 108, 120, 130, 220, 230, 320, 330, 430) is formed on one or both of the sealing surfaces.

Abstract: A display system includes first and second operation displays, wherein the display system causes the first and second operation displays to perform a cooperative operation, in a case where a predetermined operation has been received via the first operation display when the first operation display is in a power saving display state and the first and second operation displays are not performing the cooperative operation, the state of the first operation display is changed to the normal display state, and in a case where the predetermined operation has been received via the first operation display when the first operation display is in the power saving display state and the second operation display is in the normal display state and the first and second operation displays are performing the cooperative operation, the display system maintains the first operation display in the power saving display state.

Abstract: An electrical conductive member includes: an electrical conductive structure including: a substrate; an electrical conductive carbon layer provided on at least one surface of the substrate and containing electrical conductive carbon; and a middle layer interposed between the substrate and the electrical conductive carbon layer. An intensity ratio R (ID/IG) of a D-band peak intensity (ID) to a G-band peak intensity (IG) measured by a Raman scattering spectroscopic analysis in the electrical conductive carbon layer is between 1.4 and 1.9.

Abstract: On an inner surface of a housing, a nozzle for jetting operation oil is provided at a position opposite to an outer circumferential surface of a cylinder block. With this configuration, by spraying the operation oil from the nozzle to the outer circumferential surface of the cylinder block during rotation of the cylinder block, this operation oil can remove frictional heat generated by sliding between a piston and a cylinder, and seizure of the piston and seizure of the cylinder can be prevented.

Abstract: A drainage system for a fuel cell, including a gas-liquid separator configured to separate fuel gas and liquid water from a gas-liquid mixture discharged from the fuel cell, a water tank configured to receive the liquid water separated by the gas-liquid separator, a drain valve in fluid communication with the water tank, the drain valve configured to selectively discharge the liquid water from the water tank, and a control unit configured to selectively open and close the drain valve. The water tank includes a lower portion having a first horizontal cross sectional area and an upper portion having a second horizontal cross sectional area, the first horizontal cross sectional area being smaller than the second horizontal cross sectional area.

Abstract: Disclosed is an operation display system, including: an operation display device including a display unit to display an operation window; an operating unit to receive an operation to the operation window; and a display control unit to change the operation window in accordance with the operation received by using the operating unit; an air operation detecting unit to detect an air operation performed by one user in air apart from the display unit; a virtual operation window creating unit to create a virtual operation window in which the operation window is changed in accordance with the air operation; and an AR display unit to show the one user an augmented reality space in which the virtual operation window is synthesized with a real space, wherein the display control unit does not change the operation window displayed on the display unit, in accordance with the air operation.

Abstract: A holding sealing material includes a mat body. The mat body includes a first inorganic fiber and a second inorganic fiber. The first inorganic fiber contains about 60% by weight or more of alumina. The second inorganic fiber contains about 67% by weight or more of silica. The first inorganic fiber and the second inorganic fiber are in a mixed state.

Abstract: A method for fabricating a back electrode type solar cell include the steps of applying a solution including a compound containing first conductivity type impurities, titanium alkoxide, and alcohol to a surface of a first conductivity type silicon substrate, and forming a light-receiving face diffusion layer and an anti-reflection film by subjecting the solution to heat treatment in a nitrogen atmosphere. There is also provided a back electrode type solar cell including a light-receiving face diffusion layer having a sheet resistance greater than or equal to 100 ?/ and less than 250 ?/.